Method for manufacturing semiconductor device and semiconductor device
View Patent ↗In a method for manufacturing a semiconductor device, a resin layer including an inorganic filler is molded on a surface of a substrate which includes semiconductor elements attached thereto by an adhesive, and terminals electrically connected to the semiconductor elements on another surface thereof. The molded substrate is cut so as to expose a conductive body electrically connected to an external terminal maintainable at ground potential. The surface of the resin layer of the substrate is sputter-etched in a vacuum environment, in a state where a plurality of the cut substrates is provided in a tray so that the surface of the substrate faces the tray. A metal layer is sputtered so as to be electrically connected to the conductive body on the surface and the cut surface in a state where the substrate is provided in the tray while maintaining the vacuum environment after sputter-etching.
1. A method for manufacturing a semiconductor device, comprising:
molding a sealing resin layer, including an inorganic filler therein, on a surface of a substrate which includes a plurality of semiconductor elements attached thereto by an adhesive, the substrate further including external input and output terminals disposed on another surface thereof electrically connected to the semiconductor elements;
cutting the molded substrate so as to expose a conductive body therein having a terminal portion electrically connectable to an external input and output terminal, the external input and output terminal configured to be connectable to a ground potential;
positioning the cut molded substrates in a tray such that a surface of the sealing resin layer is exposed and an opposed surface of the cut molded substrate faces a surface of the tray;
sputter-etching, in a sub-atmospheric pressure environment, the exposed surface of the sealing resin layer; and
sputtering a metal layer over the sealing resin layer and the cut portion of the molded substrate in a sub-atmospheric pressure environment to electrically connect the metal layer to the conductive body on the surface of the cut surface while the cut molded substrate is located on the tray,
wherein during the sputter-etching, at least a portion of the inorganic filler in the sealing resin is exposed.
2. The method according to claim 1 , wherein the inorganic filler is silicon oxide, further comprising
sputter-etching the resin layer until the percentage of silicon at the surface of the resin layer is a range of from 18.5% to 24.5%.
3. The method according to claim 1 ,
wherein the sputtering is performed in a state where a plurality of trays are provided on a carrier, and
at least a portion of the tray immediately below the substrate is in contact with a portion of the carrier while the sputtering is performed.
4. The method according to claim 1 , further comprising:
heating a plurality of cut substrates provided on the tray, positioned such that at least a portion of the resin layer is exposed and an opposed surface thereof faces the tray, to a temperature in a range of from 150° C. to 260° C. in a sub-atmospheric pressure environment after the cutting and before the sputter-etching; and
cooling the substrates in a sub-atmospheric environment after the heating and before the sputter-etching,
wherein the sputter-etching is performed while maintaining the sub-atmospheric pressure environment.
5. The method according to claim 1 ,
wherein the metal layer includes a layer containing copper, and
wherein the sputtering is performed so that the layer containing copper is formed on the cut surface of the substrate at which the conductive body is exposed.
6. The method of claim 1 , wherein the inorganic filler is distributed in a matrix of resin.
7. The method of claim 6 , wherein the distributed inorganic filler is in the form of particles, and after sputter etching of the resin layer, portions of the particles protrude from the sputter etched surface of the resin layer.