Tandem solar cell
View Patent ↗This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa( 1 −x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.
1. A method of manufacturing a solar cell device, comprising:
providing a substrate comprising Ge or GaAs;
forming a first tunnel junction on the substrate, comprising:
forming a first n-type layer, and
forming a first p-type layer comprising a first material and a first element comprising In, Tl, Sb, Bi, Sn, Pb, Te, Po, Cd or Hg;
forming a first p-n junction on the first tunnel junction;
forming a second tunnel junction on the first p-n junction, comprising:
forming a second n-type layer comprising InGaP:Te; and
forming a second p-type layer, the second p-type layer comprising a second material Al x Ga (1−x) As and a second element comprising In, Tl, Sb, Bi, Sn, Pb, Te, Po or Hg; and
forming a second p-n junction on the second tunnel junction,
wherein a concentration of the second element is 1˜2%.
2. The method of claim 1 , wherein the first material comprises AlGa (1−x) As.
3. The method of claim 2 , wherein a concentration of the first element is 1%-2%.
4. The method of claim 2 , further comprising:
forming a third tunnel junction on the second p-n junction, wherein the third tunnel junction comprises a third p-type layer; and
forming a third p-n junction on the third tunnel junction.
5. The method of claim 4 , wherein the third p-type layer having a third material and a third element comprising In, Tl, Sb, Bi, Sn, Pb, Te, Po, Cd or Hg, and a concentration of the third element is 1%-2%.
6. The method of claim 1 , further comprising a step of forming a buffer layer between the first tunnel junction and the substrate.
7. The method of claim 6 , wherein the buffer layer, the first tunnel junction, or the first p-n junction comprises one selected from the group consisted of Gallium, Aluminum, Indium, Arsenic, and Phosphorous.
8. The method of claim 1 , wherein the first p-type layer comprises carbon, zinc, magnesium or beryllium.
9. The method of claim 1 , wherein the first n-type layer comprises Te.
10. The method of claim 8 , wherein the first p-type layer comprises carbon.
11. A solar cell device, comprising:
a substrate comprising Ge or GaAs;
a first tunnel junction on the substrate; comprising:
a first n-type layer, and
a first p-type layer comprising a first material and a first element comprising In, Tl, Sb, Bi, Sn, Pb, Te, Po, Cd or Hg;
a first p-n junction on the first tunnel junction;
a second tunnel junction on the first p-n junction, comprising:
a second n-type layer comprising InGaP:Te, and
a second p-type layer, and the second p-type layer comprising a second material of Al x Ga (1−x) As and a second element comprising In, Tl, Sb, Bi, Sn, Pb, Te, Po or Hg; and
a second p-n junction on the second tunnel junction,
wherein a concentration of the second element is 1˜2%.
12. The solar cell device of claim 11 , further comprising a buffer layer between the first tunnel junction and the substrate.
13. The solar cell device of claim 11 , wherein the first tunnel junction, the first p-n junction and the second p-n junction comprise one selected from the group consisting of Gallium, Aluminum, Indium, Arsenic, Phosphorous, Nitrogen and Silicon.
14. The solar cell device of claim 11 , wherein the first n-type layer comprises Te.
15. The solar cell device of claim 11 , wherein the first p-type layer comprises carbon.