Method of manufacturing electronic device
View Patent ↗A method of manufacturing an electronic device in which a second substrate (functional element) containing silicon and a third substrate (lid body) containing silicon are bonded to a first substrate containing alkali metal ions by anode bonding includes a first process of performing the anode bonding to bond the second substrate to a surface of the first substrate; a second process of removing at least a portion of the surface of the first substrate to which the third substrate is to be bonded by the anode bonding and exposing a bonding surface after the first process; and a third process of performing the anode bonding to bond the third substrate to the bonding surface of the first substrate.
1. A method of manufacturing an electronic device in which a second substrate containing silicon and a third substrate containing silicon are bonded to a first substrate containing alkali metal ions by anode bonding, comprising:
a first process of performing the anode bonding to bond the second substrate to a surface of the first substrate;
a second process of removing at least a portion of the surface of the first substrate to which the third substrate is to be bonded by the anode bonding and exposing a bonding surface after the first process; and
a third process of performing the anode bonding to bond the third substrate to the bonding surface of the first substrate.
2. The method according to claim 1 ,
wherein a dry etching method is used in the second process.
3. The method according to claim 1 ,
wherein the portion with a depth of 550 nm to 1000 nm from the first surface is removed in the second process.
4. The method according to claim 1 ,
wherein the portion with a depth of 650 nm to 1000 nm from the first surface is removed in the second process.
5. The method according to claim 1 ,
wherein the portion with a depth of 825 nm to 1000 nm from the first surface is removed in the second process.
6. The method according to claim 1 ,
wherein the anode bonding is performed using heating temperatures that are substantially equal to each other in the first and third processes.
7. The method according to claim 1 ,
wherein the third substrate is a lid body enclosing the second substrate.
8. The method according to claim 1 ,
wherein a heating temperature of the anode bonding is equal to or higher than 200° C. and equal to or lower than 390° C. in at least any of the first and third processes.
9. The method according to claim 2 ,
wherein the portion with a depth of 550 nm to 1000 nm from the first surface is removed in the second process.
10. The method according to claim 2 ,
wherein the portion with a depth of 650 nm to 1000 nm from the first surface is removed in the second process.
11. The method according to claim 2 ,
wherein the portion with a depth of 825 nm to 1000 nm from the first surface is removed in the second process.
12. The method according to claim 3 ,
wherein the anode bonding is performed using heating temperatures that are substantially equal to each other in the first and third processes.
13. The method according to claim 3 ,
wherein the third substrate is a lid body enclosing the second substrate.
14. The method according to claim 3 ,
wherein a heating temperature of the anode bonding is equal to or higher than 200° C. and equal to or lower than 390° C. in at least any of the first and third processes.
15. The method according to claim 6 ,
wherein the third substrate is a lid body enclosing the second substrate.
16. The method according to claim 6 ,
wherein a heating temperature of the anode bonding is equal to or higher than 200° C. and equal to or lower than 390° C. in at least any of the first and third processes.