High-voltage GaN high electron mobility transistors
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
1. A high electron-mobility transistor (HEMT) comprising:
a buffer layer;
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees;
one or more additional gates that are connected with the gate to a common gate contact;
one or more additional sources that are connected with the source to a common source contact; and
one or more additional drains that are connected with the drain to a common drain contact.
2. The HEMT of claim 1 , further comprising an oxidation layer between about 10 Angstroms and about 50 Angstroms thick formed between the gate and the barrier layer.
3. The HEMT of claim 1 , wherein a first extension of the first gate-connected field plate towards the drain is larger than a second extension of the first gate-connected field plate towards the source.
4. The HEMT of claim 3 , wherein the second extension is between approximately 10% and approximately 75% of the length of the first extension.
5. The HEMT of claim 4 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
6. The HEMT of claim 3 , wherein the first extension is between approximately 0.3 μm and approximately 0.8 μm beyond a first edge of the gate toward the drain and the second extension is between approximately 0.1 μm and approximately 0.4 μm beyond a second edge of the gate toward the source.
7. The HEMT of claim 1 , wherein the barrier layer comprises AlGaN having a mole fraction of Al between approximately 24% and approximately 29%.
8. The HEMT of claim 7 , wherein the barrier layer has a thickness between approximately 10 nm and approximately 50 nm.
9. The HEMT of claim 8 , wherein the first insulating layer comprises silicon nitride and has a thickness between approximately 20 nm and approximately 100 nm.
10. The HEMT of claim 9 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
11. The HEMT of claim 1 , wherein the gate comprises a first conductive material that physically contacts the barrier layer but does not physically contact the conduction layer.
12. The HEMT of claim 11 , wherein the first conductive material comprises a multi-layer composition selected from the following group: Ni/Pd/Au/Ti, Ni/Pt/Au/Ti, Ni/Ti/Al/W, Ni/W/Al/W, Ni/Ta/Al/Ta, Ni/Ta/Al/W, Ni/NiO/Al/W, Ni/NiO/Ta/Al/Ta, Ni/NiO/Ta/Al/W, W/Al/W, Ni/WN/Al/W, Ni/NiO/W/Al/W, Ni/NiO/WN/Al/W, WN/Al/W, and Pt/Au/Ti.
13. The HEMT of claim 11 , wherein the source and drain comprise a second conductive material that electrically contacts the conduction layer.
14. The HEMT of claim 13 , wherein the second conductive material comprises a multi-layer composition selected from the following group: Ti/Al/Ni/Au, Ti/Al/W, and Ta/Al/Ta.
15. The HEMT of claim 1 , wherein the first gate-connected field plate comprises a multi-layer composition selected from the following group: Ti/Pt/Au, Al/Cu, and TiN/Cu.
16. The HEMT of claim 1 configured to drive up to approximately 1 Amp/mm of peripheral gate length at modulation rates up to approximately 1 GHz.
17. The HEMT of claim 1 configured to drive up to approximately 1 Amp/mm of peripheral gate length at modulation rates up to approximately 10 GHz.
18. The HEMT of claim 1 configured to drive up to approximately 1 Amp/mm of peripheral gate length at modulation rates up to approximately 30 GHz.
19. A high electron-mobility transistor (HEMT) comprising:
a buffer layer;
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees, wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
20. The HEMT of claim 19 , further comprising a cap layer formed of GaN located over the barrier layer.
21. The HEMT of claim 19 , further comprising an oxidation layer between about 10 Angstroms and about 50 Angstroms thick formed between the gate and the barrier layer.
22. The HEMT of claim 19 , further comprising:
a source-connected field plate comprising a conductor that is electrically connected to the source and extends over the gate; and
a second insulating layer separating the source-connected field plate and the gate.
23. A high electron-mobility transistor (HEMT) comprising:
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees; and
a cap layer formed of GaN located over the barrier layer.
24. The HEMT of claim 23 , wherein a thickness of the cap layer is between approximately 1 nm and approximately 30 nm.
25. The HEMT of claim 24 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
26. The HEMT of claim 23 , further comprising:
a source-connected field plate comprising a conductor that is electrically connected to the source and extends over the gate; and
a second insulating layer separating the source-connected field plate and the gate.
27. The HEMT of claim 23 , further comprising an oxidation layer between about 10 Angstroms and about 50 Angstroms thick formed between the gate and the barrier layer.
28. A high electron-mobility transistor (HEMT) comprising:
a buffer layer;
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source; and
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees, wherein the gate-to-drain distance is between about 10 μm and about 20 μm and the gate is located closer to the source than to the drain.
29. The HEMT of claim 28 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
30. A high electron-mobility transistor (HEMT) comprising:
a buffer layer;
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees; and
a second gate-connected field plate electrically connected to the gate and extending beyond edges of the first gate-connected field plate toward the drain and source over a second insulating layer.
31. The HEMT of claim 30 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
32. A high electron-mobility transistor (HEMT) comprising:
a buffer layer;
a gallium-nitride conduction layer formed over the buffer layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees;
a source-connected field plate comprising a conductor that is electrically connected to the source and extends over the gate; and
a second insulating layer separating the source-connected field plate and the gate, wherein the source-connected field plate extends beyond the first gate-connected field plate.
33. The HEMT of claim 32 , wherein the source-connected field plate extends beyond the first gate-connected field plate a distance that is between approximately 1.5 μm and approximately 3.5 μm.
34. The HEMT of claim 32 , wherein an edge of the source-connected field plate near the drain may be between approximately 4 μm and approximately 10 μm.
35. The HEMT of claim 32 , wherein a thickness of the second insulating layer is between approximately 300 nm and approximately 600 nm.
36. The HEMT of claim 35 , wherein a thickness of the first insulating layer is between approximately 20 nm and approximately 100 nm.
37. The HEMT of claim 32 , wherein a length of the gate L g is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.