Semiconductor device having conductive shield layer

1. A semiconductor device comprising:

a wiring substrate comprising a base having a first surface, a second surface, and a side surface, and a wiring;

a semiconductor chip located on the first surface;

an external connection terminal located on the second surface and electrically connected to the wiring;

a sealing resin layer covering the semiconductor chip;

a metal compound layer comprising a metal nitride portion and a metal carbide portion, the metal carbide portion being in contact with a surface of the sealing resin layer, the metal carbide portion being in contact with the metal nitride; and

a conductive shield layer covering the sealing resin layer, wherein the metal compound layer is interposed between the conductive shield layer and the sealing resin layer, the conductive shield layer being in contact with the metal nitride portion,

wherein the wiring is exposed at the side surface of the wiring substrate, and is electrically connected to the conductive shield layer.

2. The device according to claim 1 , further comprising:

a protective layer located on the conductive shield layer,

wherein the conductive shield layer comprises:

a first metal layer covering the sealing resin layer with the metal compound layer interposed between the first metal layer and the sealing resin layer, and

a second metal layer located on the first metal layer, an electrical resistance thereof being lower than an electrical resistance of the first metal layer.

3. The device according to claim 1 , wherein the wiring is electrically connected to the conductive shield layer through the metal compound layer.

4. The device according to claim 1 , wherein the wiring is capable of being set at ground potential.

5. The device according to claim 1 , wherein the substrate further comprises a signal wiring and a power wiring disposed on the first surface thereof.

6. The device according to claim 5 , wherein the signal wiring and the power wiring are electrically connected to conductive vias extending through the substrate from the first surface thereof to the second surface thereof.

7. The device according to claim 1 , wherein the metal nitride portion is in direct contact with the conductive shield layer.

8. The device according to claim 1 , wherein the sealing layer has a top surface and a side surface, and the metal compound layer covers the top surface of the sealing resin layer and the side surface of the sealing resin layer.

9. The device according to claim 1 , wherein the metal nitride portion includes at least one of nickel, iron, chromium, copper, tantalum, and aluminum.

10. The device according to claim 1 , wherein the metal nitride portion includes at least one of nickel, iron, and chromium.

11. The device according to claim 1 , wherein the metal carbide portion includes at least one of nickel, copper, tantalum, and aluminum.

12. The device according to claim 1 , wherein the metal carbide portion includes nickel.

13. The device according to claim 9 , wherein the metal carbide portion includes at least one of nickel, copper, tantalum, and aluminum.

14. The device according to claim 9 , wherein the metal carbide portion includes nickel.

15. The device according to claim 10 , wherein the metal carbide portion includes at least one of nickel, copper, tantalum, and aluminum.

16. The device according to claim 10 , wherein the metal carbide portion includes nickel.

17. The device according to claim 1 , wherein a thickness of the metal carbide portion is in range of from 0.1 nm to 100 nm.

18. The device according to claim 1 , wherein a thickness of the metal nitride portion is in range of from 0.1 nm to 100 nm.