Thin film total internal reflection diffraction grating for single polarization or dual polarization

1. A diffraction grating, comprising:

a substrate;

an etch stop layer to prevent etching of the substrate,

the etch stop layer being on the substrate;

a marker layer, comprising an etchable material, that indicates an etch end-point associated with etching of a dielectric layer,

the marker layer being on a portion of the etch stop layer; and

the dielectric layer that forms a periodic grating layer after being etched,

the dielectric layer being on at least the marker layer.

2. The diffraction grating of claim 1 , further comprising:

an encapsulation layer to protect the periodic grating layer after etching of the dielectric layer,

the encapsulation layer being on at least the periodic grating layer.

3. The diffraction grating of claim 1 , where the marker layer comprises tantala, silica or silicon nitride.

4. The diffraction grating of claim 1 , where a thickness of the marker layer is less than or equal to approximately 50 nanometers.

5. The diffraction grating of claim 1 , where a first diffraction efficiency of the diffraction grating is greater than 96 percent and a second diffraction efficiency of the diffraction grating is less than approximately 2 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

6. The diffraction grating of claim 1 , where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

7. The diffraction grating of claim 1 , where the dielectric layer comprises silicon or tantala.

8. A diffraction grating, to operate based on total internal reflection, comprising:

a substrate;

an etch stop layer to prevent etching of the substrate,

the etch stop layer being on the substrate;

a dielectric grating layer on the etch stop layer,

the dielectric grating layer being a periodic grating; and

an encapsulation layer to protect the dielectric grating layer,

the encapsulation layer being on at least the dielectric grating layer, and

the encapsulation layer comprising a planar surface that spans a width of the dielectric grating layer.

9. The diffraction grating of claim 8 , further comprising:

a marker layer to signal an etch end-point associated with etching of the dielectric grating layer,

the marker layer being on the etch stop layer, and

the dielectric grating layer being on the marker layer.

10. The diffraction grating of claim 8 , where the encapsulation layer comprises silica.

11. The diffraction grating of claim 8 , where a thickness of the encapsulation layer is approximately 0.15 microns to 0.28 microns greater than a thickness of the dielectric grating layer.

12. The diffraction grating of claim 8 , where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

13. The diffraction grating of claim 8 , where a first diffraction efficiency of the diffraction grating is greater than 96 percent and a second diffraction efficiency of the diffraction grating is less than approximately 2 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

14. The diffraction grating of claim 8 , where the diffraction grating is included in a grism assembly.

15. A method of manufacturing a diffraction grating, the method comprising:

depositing an etch stop layer on a substrate;

depositing a marker layer on a portion of the etch stop layer;

depositing a dielectric layer on the marker layer;

etching the dielectric layer to form a grating layer,

during etching the dielectric layer,

preventing, by the etch stop layer, etching of the substrate; and

determining, based on etching the marker layer, that the etching the dielectric layer is to be stopped; and

etching the marker layer to indicate an etch end-point associated with the etching of the dielectric layer.

16. The method of claim 15 , further comprising:

depositing an encapsulation layer associated with protecting the grating layer,

the encapsulation layer to be deposited on the grating layer.

17. The method of claim 16 , where the encapsulation layer is formed of silica and a difference between a thickness of the encapsulation layer and a thickness of the grating layer is approximately 0.25 microns.

18. The method of claim 15 , where the marker layer is formed of tantala, silica or silicon nitride and has a thickness that is less than or equal to approximately 50 nanometers.

19. The method of claim 15 , where an area corresponding to the portion of the etch stop layer on which the marker layer is deposited is an off-chip area of the substrate.

20. The method of claim 15 , where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.