Memory devices

1. A memory device comprising:

a plurality of channel regions extending in a direction that is perpendicular to an upper surface of a substrate;

a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions;

an interlayer insulating layer on the plurality of gate electrode layers;

a plurality of cell contact plugs passing through the interlayer insulating layer, wherein each of the plurality of cell contacts is connected to a respective one of the plurality of gate electrode layers; and

a vertical insulating layer extending from the interlayer insulating layer between the plurality of channel regions and the plurality of cell contact plugs, and having a portion surrounded by at least one of the plurality of gate electrode layers.

2. The memory device of claim 1 , wherein the vertical insulating layer passes through at least one of the plurality of gate electrode layers.

3. The memory device of claim 1 , further comprising gate insulating films between the plurality of channel regions and the plurality of gate electrode layers, respectively, wherein at least a portion of the vertical insulating layer is connected to one of the gate insulating films.

4. The memory device of claim 1 , wherein an upper surface of the vertical insulating layer is coplanar with an upper surface of an uppermost insulating layer of the plurality of insulating layers.

5. The memory device of claim 1 , wherein the vertical insulating layer includes the same material as a material of the interlayer insulating layer.

6. The memory device of claim 1 , further comprising a plurality of isolation insulating layers dividing the plurality of gate electrode layers and the plurality of insulating layers into a plurality of unit regions.

7. The memory device of claim 6 , wherein a width of the vertical insulating layer is narrower than a width of each of the plurality of unit regions.

8. The memory device of claim 7 , wherein a width of the vertical insulating layer is less than ½ of the width of each of the plurality of unit regions.

9. The memory device of claim 6 , further comprising a common source line in at least one of the plurality of isolation insulating layers.

10. The memory device of claim 6 , wherein the vertical insulating layer is provided as a plurality of vertical insulating layers, and the quantity of the plurality of vertical insulating layers is less than or equal to the quantity of the plurality of unit regions.

11. The memory device of claim 1 , further comprising a dummy trench embedded in the substrate at a periphery of the plurality of gate electrode layers.

12. The memory device of claim 1 , wherein a thickness of the vertical insulating layer is greater than a thickness of an uppermost insulating layer of the plurality of insulating layers.

13. A memory device comprising:

a first region having a plurality of channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers that are adjacent the plurality of channel regions, and gate insulating films that are between the plurality of channel regions and the plurality of gate electrode layers;

a second region that is adjacent the first region, and that has a plurality of cell contact plugs connected to the plurality of gate electrode layers extending in a first direction parallel to the upper surface of the substrate to have different lengths, respectively; and

a vertical insulating layer that is adjacent a border between the first region and the second region, and that has a portion that is adjacent at least one of the plurality of gate electrode layers in a direction parallel to the upper surface of the substrate.

14. The memory device of claim 13 , wherein the gate insulating films are between the vertical insulating layer and the at least one of the plurality of gate electrode layers.

15. The memory device of claim 13 , wherein the vertical insulating layer passes through an uppermost gate electrode layer of the plurality of gate electrode layers.

16. The memory device of claim 13 , further comprising an interlayer insulating layer that is on the plurality of gate electrode layers in the first region and the second region, wherein the vertical insulating layer extends from the interlayer insulating layer.

17. The memory device of claim 13 , further comprising a peripheral circuit region including a plurality of peripheral circuit devices and that is on a periphery of the second region.

18. The memory device of claim 13 , further comprising a peripheral circuit region including a plurality of peripheral circuit devices and that is below the first region and the second region.

19. A memory device comprising:

a substrate;

a plurality of channel regions extending in a direction perpendicular to an upper surface of a substrate;

a gate structure stacked on the substrate, that is adjacent at least a portion of the plurality of channel regions, and that has a plurality of gate electrode layers and a plurality of insulating layers extending in a first direction to have different lengths, respectively;

a plurality of isolation insulating layers dividing the gate structure into a plurality of unit regions; and

a vertical insulating layer that is between an end of the plurality of gate electrode layers in the first direction and the plurality of channel regions to pass through an uppermost insulating layer of the plurality of insulating layers, and provided in at least a portion of the plurality of unit regions.

20. The memory device of claim 19 , wherein the vertical insulating layer passes through an uppermost gate electrode layer of the plurality of gate electrode layers.