Systems and methods for correcting data errors in memory susceptible to data loss when subjected to elevated temperatures

1. A method of forming a device, the method comprising:

forming an integrated circuit (IC) die including a memory having a plurality of memory locations;

testing the IC die to determine addresses of a subset of the plurality of memory locations that are susceptible to data loss when subjected to elevated temperatures;

writing bits of data to the plurality of memory locations, the bits of data including a subset of bits written to the subset of the plurality of memory locations that are susceptible to data loss when subjected to elevated temperatures;

writing the subset of bits to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, wherein the subset of bits comprise compressed code;

attaching the IC die to a printed circuit board using a process during which the IC die is subjected to an elevated temperature;

overwriting at least one of the subset of bits stored at the subset of the plurality of memory locations of the memory with at least one of the subset of bits written to the storage device;

decompressing the compressed code;

releasing the compressed code from the memory to make available space in the memory; and

writing the decompressed code to the memory.

2. The method of claim 1 , wherein the overwriting of the at least one of the subset of bits comprises:

comparing the subset of bits written to the storage device to corresponding bits stored at the addresses; and

updating the at least one of the subset of bits stored at the addresses based on the comparing.

3. The method of claim 2 , wherein the updating the at least one of the subset of bits based on the comparing comprises:

for compared bits having values that do not match, updating bit values in the memory based on values of the subset of bits stored in the storage device.

4. The method of claim 1 , wherein the subjecting of the IC die to the elevated temperature comprises:

performing a reflow process at the elevated temperature to form a connection between the IC die and the printed circuit board (PCB).

5. The method of claim 1 , wherein the storage device comprises an electronically programmable fuse.

6. The method of claim 1 , further comprising:

determining one or more portions of the memory that are not susceptible to data loss when subjected to the elevated temperatures, wherein the storage device comprises the one or more portions.

7. The method of claim 6 , further comprising:

releasing the subset of bits stored in the one or more portions to make available space in the memory after the overwriting of the at least one of the subset of bits.

8. The method of claim 1 , wherein the determining of the addresses comprises:

writing dummy bits having predetermined values to the memory;

performing a process on the IC die at the elevated temperature;

after the process, determining memory addresses of dummy bits that have changed values as a result of the process, the memory addresses comprising the addresses of the memory locations that are susceptible to data loss when subjected to the elevated temperatures; and

writing the memory addresses to the storage device.

9. The method of claim 1 ,

wherein the determining of the addresses is performed during one or more chip probing stages of a production process.

10. An integrated circuit (IC) die comprising:

a memory including a plurality of memory locations, the plurality of memory locations including a subset of memory locations determined during testing to be susceptible to data loss when subjected to elevated temperatures;

a storage device that is not susceptible to data loss when subjected to the elevated temperatures;

and a logic module that is configured to write bits of data to the plurality of memory locations, the bits of data including a subset of bits written to the subset of memory locations that are susceptible to data loss when subjected to elevated temperatures, wherein the subject of bits comprise compressed code,

write the subset of bits to the storage device, and after the IC die has been subjected to an elevated temperature, overwrite at least one of the subset of bits stored in the subset of the plurality of memory locations of the memory with at least one of the subset of bits written to the storage device,

decompress the compressed code;

release the compressed code from the memory to make available space in the memory;

and write the decompressed code to the memory.

11. The IC die of claim 10 , wherein the storage device comprises an electronically programmable fuse.

12. The IC die of claim 10 , wherein the storage device comprises one or more portions of the memory that are not susceptible to data loss when subjected to elevated temperatures.

13. The IC die of claim 10 , wherein the overwriting of the at least one of the subset of bits comprises:

comparing the subset of bits written to the storage device to corresponding bits stored at the addresses; and

updating the at least one of the subset of bits stored at the addresses based on the comparing.

14. A circuit package, comprising:

a printed circuit board; and an integrated circuit die coupled to the printed circuit board by solder bonds that are created using a solder bonding process during which the integrated circuit is subjected to an elevated temperature, the integrated circuit die comprising,

a memory including a plurality of memory locations, the plurality of memory locations including a subset of memory locations determined during testing to be susceptible to data loss when subjected to elevated temperatures, a storage device that is not susceptible to data loss when subjected to the elevated temperatures,

and a logic module that is configured to write bits of data to the plurality of memory locations, the bits of data including a subset of bits written to the subset of memory locations that are susceptible to data loss when subjected to elevated temperatures, wherein the subset of bits comprise compressed code,

write the subset of bits to the storage device, and after the IC die has been subjected to the elevated temperature during the solder bonding process, overwrite at least one of the subset of bits stored in the subset of the plurality of memory locations of the memory with at least one of the subset of bits written to the storage device,

decompress the compressed code;

release the compressed code from the memory to make available space in the memory;

and write the decompressed code to the memory.

15. The circuit package of claim 14 , wherein the storage device comprises an electronically programmable fuse.

16. The circuit package of claim 14 , wherein the storage device comprises one or more portions of the memory that are not susceptible to data loss when subjected to elevated temperatures.

17. The circuit package of claim 14 , wherein the overwriting of the at least one of the subset of bits comprises:

comparing the subset of bits written to the storage device to corresponding bits stored at the addresses; and

updating the at least one of the subset of bits stored at the addresses based on the comparing.