Semiconductor device and semiconductor system with word line copy
View Patent ↗A semiconductor device including an operation control signal generation circuit configured for generating an operation control signal for a target word line. The semiconductor device including a copy operation circuit configured for performing a first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal.
1. A semiconductor device comprising:
an operation control signal generation circuit configured for generating an operation control signal for a target word line which is accessed, based on access information; and
a copy operation circuit configured for performing a first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal and a detection signal, wherein the detection signal is enabled based on the data of the first cells and data of the second cells being the same with each other.
2. The semiconductor device according to claim 1 , wherein the access information is enabled based on accessing the target word line at least a predetermined number of times.
3. The semiconductor device according to claim 2 , wherein the operation control signal is enabled based on accessing the target word line in a state in which the access information is enabled.
4. The semiconductor device according to claim 1 , wherein the copy operation circuit controls the first copy operation based on the detection signal.
5. The semiconductor device according to claim 4 , wherein the copy operation circuit cuts off the first copy operation based on the enablement of the detection signal.
6. The semiconductor device according to claim 1 , wherein the copy operation circuit comprises a row control circuit configured for driving the adjacent word line and the first clone word line based on the operation control signal and the detection signal and generating a sense amplifier signal for operating a sense amplifier coupled between the adjacent word line and the first clone word line.
7. The semiconductor device according to claim 6 , wherein the row control circuit drives the adjacent word line and the first clone word line and enables the sense amplifier signal, for the first copy operation, based on the enablement of the operation control signal and the disablement of the detection signal.
8. The semiconductor device according to claim 6 , wherein the row control circuit disables the sense amplifier signal based on the enablement of the detection signal.
9. The semiconductor device according to claim 1 , wherein the copy operation circuit performs a second copy operation after performing the first copy operation, and the second copy operation stores data of the second cells coupled to the first clone word line, in third cells coupled to a second clone word line.
10. The semiconductor device according to claim 9 , wherein the second clone word line is included in the same cell region as the target word line.
11. The semiconductor device according to claim 9 , wherein the second clone word line is included in a different cell region than the first clone word line.
12. A semiconductor device comprising:
an operation control signal generation circuit configured for generating an operation control signal for a target word line which is accessed, based on access information; and
a copy operation circuit configured for performing a copy operation of storing data of first cells coupled to the target word line, in second cells coupled to a clone word line, based on the operation control signal and a detection signal, wherein the detection signal is enabled based on the data of the first cells and data of the second cells being the same with each other.
13. The semiconductor device according to claim 12 , wherein the access information is enabled based on accessing the target word line at least a predetermined number of times.
14. The semiconductor device according to claim 13 , wherein the operation control signal is enabled based on accessing the target word line in a state in which the access information is enabled.
15. The semiconductor device according to claim 13 , wherein the copy operation circuit prevents the copy operation based on the enablement of the detection signal.
16. The semiconductor device according to claim 12 , wherein the copy operation circuit comprises a row control circuit configured for driving the clone word line based on the operation control signal and the detection signal, and generating a sense amplifier signal for operating a sense amplifier coupled between the target word line and the clone word line.
17. The semiconductor device according to claim 16 , wherein the row control circuit drives the clone word line and enables the sense amplifier signal, for the copy operation, based on the enablement of the operation control signal and the disablement of the detection signal.
18. The semiconductor device according to claim 16 , wherein the row control circuit disables the sense amplifier signal based on the enablement of the detection signal.
19. The semiconductor device according to claim 12 , wherein the clone word line is included in a different cell region than the target word line.
20. A semiconductor system comprising:
a first semiconductor device configured for outputting a command and an address; and
a second semiconductor device configured for performing a first copy operation for a target word line which is driven based on the address, in a state in which a refresh is performed based on the command, the second semiconductor device generating an operation control signal for the target word line which is accessed, based on access information, and performing the first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal and a detection signal, wherein the detection signal is enabled based on the data of the first cells and data of the second cells being the same with each other.