Flash channel calibration with multiple lookup tables
A system and method for generating lookup tables for use in an adaptive multiple-read system for reading flash memory. Successive different attempts are made to decode previously stored data using error correction codes, the attempts differing, for example, with respect to the combination of raw data words used for each attempt, each raw data word having been obtained by reading a code word of data using a different word line voltage. When a decoding attempt succeeds, log likelihood ratios are calculated from counts of flipped bits, i.e., bits in the raw data read from the memory having a different value than the corresponding bits in the decoded data.
1. A method, comprising:
calibrating a flash memory; and
performing an adaptive multi-read operation based on the calibration,
the calibrating comprising:
performing a first read operation on a first plurality of flash memory cells, at a first word line voltage, to form a first raw data word;
performing a second read operation on the first plurality of flash memory cells, at a second word line voltage, to form a second raw data word;
executing a first error correction code decoding attempt with a first set of one or more raw data words including the first raw data word;
determining that the first error correction code decoding attempt has succeeded; and
based on the determining that the first error correction code decoding attempt has succeeded:
generating,
from bit differences between
the first set of one or more raw data words and
one or more corresponding decoded data words generated by the first error correction code decoding attempt,
a first lookup table including:
a first log likelihood ratio corresponding to a first range of word line voltages and
a second log likelihood ratio corresponding to a second range of word line voltages; and
generating,
from bit differences between
a second set of two or more raw data words and
two or more corresponding decoded data words generated by the first error correction code decoding attempt,
a second lookup table including:
a third log likelihood ratio corresponding to a third range of word line voltages;
a fourth log likelihood ratio corresponding to a fourth range of word line voltages; and
a fifth log likelihood ratio corresponding to a fifth range of word line voltages.
2. The method of claim 1 , wherein:
the third log likelihood ratio corresponds to the first range of word line voltages;
the third log likelihood ratio equals the first log likelihood ratio;
the fourth range of word line voltages is a sub-range of the second range of word line voltages; and
the fifth range of word line voltages is a sub-range of the second range of word line voltages.
3. The method of claim 1 , further comprising, based on the determining that the first error correction code decoding attempt has succeeded:
generating,
from bit differences between
a third set of three or more raw data words and
three or more corresponding decoded data words generated by the first error correction code decoding attempt,
a third lookup table including:
a sixth log likelihood ratio corresponding to a sixth range of word line voltages;
a seventh log likelihood ratio corresponding to a seventh range of word line voltages;
an eighth log likelihood ratio corresponding to an eighth range of word line voltages; and
a ninth log likelihood ratio corresponding to a ninth range of word line voltages.
4. The method of claim 1 , wherein the first error correction code decoding attempt is a soft decision input error correction code decoding attempt.
5. The method of claim 4 , wherein the first error correction code decoding attempt comprises a decoding attempt utilizing a low density parity check algorithm.
6. The method of claim 5 , further comprising:
performing a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
performing a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
executing a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determining that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
executing a third error correction code decoding attempt with one or more raw data words not including the third raw data word.
7. The method of claim 1 , further comprising:
performing a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
performing a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
executing a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determining that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
executing a third error correction code decoding attempt with one or more raw data words not including the third raw data word.
8. The method of claim 7 , wherein the second error correction code decoding attempt is a soft decision input error correction code decoding attempt.
9. The method of claim 7 , wherein the second error correction code decoding attempt is a hard decision input error correction code decoding attempt.
10. The method of claim 1 , further comprising:
performing a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
performing a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
executing a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determining that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
generating the first lookup table and the second lookup table from bit differences between the third set of one or more raw data words and a data set reconstructed from separately stored information.
11. The method of claim 1 , wherein the first log likelihood ratio is a logarithm of a ratio of
a probability of a threshold word line voltage, at which a flash memory cell transistor of a flash memory cell of the flash memory is configured to transition between an on state and an off state, being within the first range of word line voltages if the flash memory cell was most recently programmed with a logical 1, and
a probability of the threshold word line voltage being within the first range of word line voltages if the flash memory cell was most recently programmed with a logical 0.
12. A solid state drive, comprising:
a controller; and
flash memory,
the controller being to:
calibrate the flash memory, and
perform an adaptive multi-read operation based on the calibration,
the calibrating comprising:
performing a first read operation on a first plurality of flash memory cells of the flash memory, at a first word line voltage, to form a first raw data word;
performing a second read operation on the first plurality of flash memory cells, at a second word line voltage, to form a second raw data word;
executing a first error correction code decoding attempt with a first set of one or more raw data words including the first raw data word;
determining that a first error correction code decoding attempt has succeeded; and
based on the determining that the first error correction code decoding attempt has succeeded:
generating,
from bit differences between
a second set of one or more raw data words and
one or more corresponding decoded data words generated by the first error correction code decoding attempt,
a first lookup table including:
a first log likelihood ratio corresponding to a first range of word line voltages and
a second log likelihood ratio corresponding to a second range of word line voltages; and
generating,
from bit differences between
a second set of two or more raw data words and
two or more corresponding decoded data words generated by the first error correction code decoding attempt,
a second lookup table including:
a third log likelihood ratio corresponding to a third range of word line voltages;
a fourth log likelihood ratio corresponding to a fourth range of word line voltages; and
a fifth log likelihood ratio corresponding to a fifth range of word line voltages.
13. The solid state drive of claim 12 , wherein the controller is further configured to, based on the determining that the first error correction code decoding attempt has succeeded,
generate,
from bit differences between
a third set of three or more raw data words and
three or more corresponding decoded data words generated by the first error correction code decoding attempt,
a third lookup table including:
a sixth log likelihood ratio corresponding to a sixth range of word line voltages;
a seventh log likelihood ratio corresponding to a seventh range of word line voltages;
an eighth log likelihood ratio corresponding to an eighth range of word line voltages; and
a ninth log likelihood ratio corresponding to a ninth range of word line voltages.
14. The solid state drive of claim 12 , wherein the first error correction code decoding attempt is a soft decision input error correction code decoding attempt.
15. The solid state drive of claim 14 , wherein the first error correction code decoding attempt comprises a decoding attempt utilizing a low density parity check algorithm.
16. The solid state drive of claim 15 , wherein the controller is further configured to:
perform a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
perform a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
execute a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determine that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
execute a second error correction code decoding attempt with one or more raw data words not including the first raw data word.
17. The solid state drive of claim 12 , wherein the controller is further configured to:
perform a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
perform a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
execute a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determine that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
execute a second error correction code decoding attempt with one or more raw data words not including the first raw data word.
18. The solid state drive of claim 17 , wherein the second error correction code decoding attempt is a soft decision input error correction code decoding attempt.
19. The solid state drive of claim 17 , wherein the second error correction code decoding attempt is a hard decision input error correction code decoding attempt.
20. The solid state drive of claim 12 , wherein the controller is further configured to:
perform a third read operation on a second plurality of flash memory cells, at the first word line voltage, to form a third raw data word;
perform a fourth read operation on the second plurality of flash memory cells, at the second word line voltage, to form a fourth raw data word;
execute a second error correction code decoding attempt with a third set of one or more raw data words including the third raw data word;
determine that the second error correction code decoding attempt has not succeeded; and
based on the determining that the first error correction code decoding attempt has not succeeded:
generate the first lookup table and the second lookup table from bit differences between the third set of one or more raw data words and a data set reconstructed from separately stored information.
21. The solid state drive of claim 12 , wherein the first log likelihood ratio is a logarithm of a ratio of
a probability of a threshold word line voltage, at which a flash memory cell transistor of a flash memory cell of the flash memory is configured to transition between an on state and an off state, being within the first range of word line voltages if the flash memory cell was most recently programmed with a logical 1, and
a probability of the threshold word line voltage being within the first range of word line voltages if the flash memory cell was most recently programmed with a logical 0.