Optical and thermal interface for photonic integrated circuits
Described herein are photonic systems and devices including a optical interface unit disposed on a bottom side of a photonic integrated circuit (PIC) to receive light from an emitter of the PIC. A top side of the PIC includes a flip-chip interface for electrically coupling the PIC to an organic substrate via the top side. An alignment feature corresponding to the emitter is formed with the emitter to be offset by a predetermined distance value; because the emitter and the alignment feature are formed using a shared processing operation, the offset (i.e., predetermined distance value) may be precise and consistent across similarly produced PICs. The PIC comprises a processing feature to image the alignment feature from the bottom side (e.g., a hole). A heat spreader layer surrounds the optical interface unit and is disposed on the bottom side of the PIC to spread heat from the PIC.
1. A layered photonic integrated circuit, comprising:
a photonic integrated circuit layer including a first material having a first thermal conductivity and a first refractive index;
a thermally conductive layer positioned adjacent a first side of the photonic integrated circuit layer and formed from a second material having a second thermal conductivity greater than the first thermal conductivity, the thermally conductive layer defining a hole extending to the first side of the photonic integrated circuit layer;
a light emitter positioned proximate an opposed second side of the photonic integrated circuit layer to emit light through the photonic integrated circuit layer; and
a lens positioned proximate the hole in the thermally conductive layer and positioned to receive light emitted from the light emitter, the lens having a second refractive index less than the first refractive index.
2. The photonic integrated circuit of claim 1 , wherein the lens is shaped to collimate the light emitted from the light emitter.
3. The photonic integrated circuit of claim 1 , further comprising a third material positioned between the lens and the thermally conductive layer and configured to secure the lens in the hole.
4. The photonic integrated circuit of claim 3 , wherein the third material includes at least one of a metal, silicon, or UV-cured epoxy.
5. The photonic integrated circuit of claim 1 , wherein the thermally conductive layer has a coefficient of thermal expansion matched to a coefficient of thermal expansion of the photonic integrated circuit layer.
6. The photonic integrated circuit of claim 1 , wherein the photonic integrated circuit layer defines a second hole extending from the hole in the thermally conductive layer and extending through the photonic integrated circuit layer.
7. The photonic integrated circuit of claim 6 , further comprising a fourth material positioned in the second hole.
8. The photonic integrated circuit of claim 7 , wherein the fourth material includes at least one of a metal, silicon, or UV-cured epoxy.
9. The photonic integrated circuit of claim 6 , further comprising an alignment feature positioned on the second side of the photonic integrated circuit layer and positioned to be visible through the second hole.
10. The photonic integrated circuit of claim 9 , wherein the alignment feature is a fiducial that includes a printed cross.
11. The photonic integrated circuit of claim 9 , wherein the alignment feature is formed with the light emitter so that the alignment feature and the light emitter are offset by a predetermined value.
12. A method, comprising:
producing light with a light emitter;
directing the light through a photonic integrated circuit layer having a second side positioned proximate the light emitter, the photonic integrated circuit layer including a first material having a first thermal conductivity and a first refractive index; and
collimating the light with a lens, the lens having a second refractive index less than the first refractive index, the lens being positioned within a hole in a thermally conductive layer, the thermally conductive layer being positioned adjacent a first side of the photonic integrated circuit layer opposite the second side of the photonic integrated circuit layer, the thermally conductive layer being formed from a second material having a second thermal conductivity greater than the first thermal conductivity.
13. The method of claim 12 , further comprising:
securing the lens in the hole with a third material positioned between the lens and the thermally conductive layer;
wherein the third material includes at least one of a metal, silicon, or UV-cured epoxy.
14. The method of claim 12 , wherein the thermally conductive layer has a coefficient of thermal expansion matched to a coefficient of thermal expansion of the photonic integrated circuit layer.