Semiconductor device including electromagnetic interference (EMI) shielding layer and method for manufacturing the semiconductor device
According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.
1. A method for manufacturing a semiconductor device, comprising:
providing a substrate having a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface;
providing a semiconductor chip on the first surface;
forming a resin portion that seals the semiconductor chip;
forming a conductive film on an upper surface of the resin portion and a side surface of the resin portion, the conductive film being electrically connectable to a ground potential source; and
forming a film stack including a first film that is a metal oxide film formed by depositing metal in an oxygen containing environment or a metal nitride film formed by depositing metal in a nitrogen containing environment, wherein
a lightness value of the film stack is less than a lightness value of the resin portion.
2. The method according to claim 1 , wherein
the conductive film contains at least one of copper, chrome, iron, nickel, titanium, and aluminum, and
the first film is the metal oxide film and the metal oxide film contains at least one of copper oxide, chromium oxide, iron oxide, and nickel oxide.
3. The method according to claim 2 , wherein the film stack further includes a second film that is titanium aluminum nitride.
4. The method according to claim 1 , wherein the conductive film is formed in a vacuum environment, and the first film of the film stack is formed in the vacuum environment used in forming the conductive film.
5. The method according to claim 1 ,
wherein the conductive film and the first film of the film stack are formed in the same chamber.
6. The method according to claim 1 , wherein
the conductive film is formed in a first vacuum chamber,
the substrate is moved under vacuum to a second chamber, and
the first film of the film stack is formed in the second chamber.
7. The method according to claim 1 , wherein
the first film of the film stack is the metal oxide film, and the first film is formed on the conductive film by sputtering a metal while the metal is being plasma-oxidized.
8. The method according to claim 1 , wherein
the film stack further includes a second film that is an oxide of stainless steel film, and
the first film of the film stack is a copper oxide film.
9. The method according to claim 1 , wherein forming the film stack further includes forming a stainless steel film on the conductive film.
10. The method according to claim 9 , wherein
the film stack further includes an oxide stainless steel film, and
the first film is a copper oxide film.
11. The method according to claim 9 , wherein the first film of the film stack is a chromium oxide film.
12. The method according to claim 1 , wherein the first film of the film stack is the metal nitride film, and the first film is formed on the conductive film by sputtering a metal while the metal is being plasma-nitrided.