SMALL LED SOURCE WITH HIGH BRIGHTNESS AND HIGH EFFICIENCY

1 . A light emitting diode (LED) device comprising:

a submount;

at least one pump LED, grown on a substrate, wherein the LED comprises a light-emitting active region comprising a base area;

a color-converting material overlying the at least one pump light-emitting diode; and

at least one flat emitting surface having an emitting area and emitting substantially white light;

wherein the area of the at least one flat emitting surface is characterized by an area less than 250 μm×250 μm, and a surface brightness of 800 mW/mm 2 or more;

wherein the LED device is characterized by a wall-plug efficiency of at least 25%.

2 . The LED device of claim 1 , wherein the substrate comprises a bulk III-nitride-containing compound.

3 . The LED device of claim 1 , wherein the at least one pump LED is configured to emit violet light.

4 . The LED device of claim 1 , wherein the at least one pump LED is configured to emit blue light.

5 . The LED device of claim 1 , wherein the at least one flat emitting surface emits light characterized by a CCT in a range from about 2000K to about 10000K.

6 . The LED device of claim 1 , wherein the at least one LED is configured to be driven at a current density in a range of about 100 A/cm 2 to about 1000 A/cm 2 .

7 . The LED device of claim 1 , wherein light emitted by the LED device exhibits a gamut of at least 70% of NTSC gamut.

8 . The LED device of claim 1 , wherein the at least one LED comprises a flip-chip configuration.

9 . The LED device of claim 1 , wherein the base area is characterized by a base shape that is substantially rectilinear.

10 . The LED device of claim 1 , wherein the submount is characterized by a reflectivity higher than 80% within at least a wavelength in a range of 400 nm to 700 nm.

11 . The LED device of claim 1 , further comprising at least one reflective material in proximity to at least one of the at least one LED and in proximity to the color conversion material.

12 . The LED device of claim 11 , wherein the reflective material is characterized by a reflectivity higher than 90% within at least a wavelength in a range of 400 nm to 700 nm.

13 . The LED device of claim 11 , comprising an air gap between the reflective material and at least one of the at least one LED and the color conversion material.

14 . The LED device of claim 13 , wherein at least one of the reflective material or the submount forms a diffuse reflector.

15 . The LED device of claim 14 , wherein at least one of the reflective material or the submount comprises a metal material.

16 . The LED device of claim 14 , wherein at least one of the reflective material or the submount comprises a dielectric stack.

17 . The LED device of claim 1 , wherein a combined thickness of the submount, the at least one LED, and the light-converting material is less than 1 mm.

18 . A light emitting diode (LED) device comprising a LED, wherein the LED comprises:

a base area less than 250 μm×250 μm; and

an emitting surface comprising an emitting area configured to emit substantially white light;

wherein the emitting surface is characterized by a surface brightness of 800 mW/mm 2 or more; and

wherein at least 80% of the base area is used for light generation.

19 . A light emitting diode (LED) device comprising:

at least one pump LED, wherein the at least one pump LED comprises:

a base area;

a color-converting material overlying the at least one pump LED; and

at least one emitting surface configured to emit substantially white light, wherein,

the at least one emitting surface has an area less than 250 μm×250 μm;

is characterized by a surface brightness of 800 mW/mm 2 or more; and

the at least one pump LED is characterized by a wall-plug efficiency of at least 25%; and

a display component wherein the at least one pump light-emitting diode is coupled to the display component.

20 . The LED device of claim 19 , wherein the display component comprises a flat panel display.