Semiconductor module with two auxiliary emitter conductor paths

1. A semiconductor module, comprising:

at least one semiconductor chip comprising at least one semiconductor switch having a collector, emitter and gate;

a collector terminal connected to the collector;

a gate terminal connected to the gate;

an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance;

an auxiliary emitter terminal connected to the emitter;

a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path;

the first conductor path and the second conductor path are connectable to the auxiliary emitter terminal;

wherein the semiconductor switch is an IGBT, and

wherein each of the first conductor path and the second conductor path comprises bridging points that may be short-circuited by a bond wire for connecting the respective conductor path to the auxiliary emitter terminal.

2. The semiconductor module of claim 1 , wherein the first conductor path or the second conductor path is connected to the emitter conductor path such that the first conductor path or the second conductor path and the emitter inductance have a common part.

3. The semiconductor module of claim 2 , wherein the second conductor path has a mutually inductive coupling with the emitter conductor path that is at least twice as high as a mutually inductive coupling of the first conductor path with the emitter conductor path.

4. The semiconductor module of claim 2 , wherein the first conductor path or second conductor path comprise an auxiliary inductance different from the emitter inductance; or

wherein the first conductor path or second conductor is inductively coupled with the emitter inductance via an auxiliary inductance.

5. The semiconductor module of claim 2 , wherein the semiconductor module comprises at least two semiconductor switches, which are connected in parallel via their emitters connected to the emitter terminal and which are connected in parallel via their gates, which are connected to the gate terminal.

6. The semiconductor module of claim 1 , wherein the second conductor path has a mutually inductive coupling with the emitter conductor path that is at least twice as high as a mutually inductive coupling of the first conductor path with the emitter conductor path.

7. The semiconductor module of claim 6 , wherein the first conductor path or second conductor path comprise an auxiliary inductance different from the emitter inductance; or

wherein the first conductor path and/or second conductor is inductively coupled with the emitter inductance via an auxiliary inductance.

8. The semiconductor module of claim 6 , wherein the semiconductor module comprises at least two semiconductor switches, which are connected in parallel via their emitters connected to the emitter terminal and which are connected in parallel via their gates, which are connected to the gate terminal.

9. The semiconductor module of claim 6 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

10. The semiconductor module of claim 1 , wherein the first conductor path or second conductor path comprise an auxiliary inductance different from the emitter inductance; or

wherein the first conductor path and/or second conductor is inductively coupled with the emitter inductance via an auxiliary inductance.

11. The semiconductor module of claim 10 , wherein the semiconductor module comprises at least two semiconductor switches, which are connected in parallel via their emitters connected to the emitter terminal and which are connected in parallel via their gates, which are connected to the gate terminal.

12. The semiconductor module of claim 10 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

13. The semiconductor module of claim 1 , wherein the semiconductor module comprises at least two semiconductor switches, which are connected in parallel via their emitters connected to the emitter terminal and which are connected in parallel via their gates, which are connected to the gate terminal.

14. The semiconductor module of claim 13 , wherein a first semiconductor switch is connected via a first emitter conductor path having a first emitter inductance with the emitter terminal and a second semiconductor switch is connected via a second emitter conductor path having a second emitter inductance with the emitter terminal;

wherein at least one of the first conductor path and the second conductor path comprises bridging points that may be short-circuited by a bond wire for interconnecting the first emitter conductor path and the second emitter conductor path.

15. The semiconductor module of claim 14 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

16. The semiconductor module of claim 13 , wherein the at least two semiconductor switches are connected with their emitters via a common emitter conductor path to the emitter terminal, the emitter conductor path having a common emitter inductance.

17. The semiconductor module of claim 16 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

18. The semiconductor module of claim 13 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

19. The semiconductor module of claim 1 , wherein the at least one semiconductor chip, the emitter conductor path, the first conductor path and the second conductor path are assembled in a common housing;

wherein the collector terminal, the gate terminal, the emitter terminal and the auxiliary emitter terminal are provided on the common housing.

20. A semiconductor assembly, comprising:

a semiconductor module, comprising:

at least one semiconductor chip comprising at least one semiconductor switch having a collector, emitter and gate;

a collector terminal connected to the collector;

a gate terminal connected to the gate;

an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance;

an auxiliary emitter terminal connected to the emitter;

a first conductor path connected to the emitter having a mutually inductive coupling with the emitter conductor path;

a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path than the first conductor path;

the first conductor path and the second conductor path are connectable to the auxiliary emitter terminal;

wherein the semiconductor switch is an IGBT, and

wherein each of the first conductor path and the second conductor path comprises bridging points that may be short-circuited by a bond wire for connecting the respective conductor path to the auxiliary emitter terminal,

a gate drive interconnecting the gate terminal and the emitter via at least one of:

the first conductor path;

the first conductor path and a first auxiliary resistor;

the second conductor path; and

the second conductor path and a second auxiliary resistor.