METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening.
1 . A semiconductor device comprising:
a silicon nitride film formed above a front surface side of a semiconductor substrate;
a first wiring formed above the silicon nitride film;
a second wiring containing aluminum formed over the first wiring via a first insulating film;
a second insulating film having an opening over the second wiring; and
aluminum nitride formed over the second wiring at a bottom surface of the opening.
2 . The semiconductor device according to claim 1 ,
wherein a bonding wire or a bump electrode is formed over the second wiring at the bottom surface of the opening.
3 . The semiconductor device according to claim 1 , further comprising:
a probe mark formed over the second wiring at the bottom surface of the opening.
4 . The semiconductor device according to claim 1 , further comprising:
aluminum oxide formed on side walls of the second wiring.
5 . The semiconductor device according to claim 4 , wherein the aluminum nitride and the aluminum oxide are formed over the second wiring at the bottom surface of the opening.
6 . The semiconductor device according to claim 1 , further comprising:
an MISFET formed over the semiconductor substrate,
wherein the MISFET includes:
a gate electrode formed over the semiconductor substrate via a gate insulating film; and
a side wall insulating film formed on side walls of the gate electrode, and
wherein the silicon nitride film configures the side wall insulating film.
7 . The semiconductor device according to claim 1 , further comprising:
an MISFET formed over the semiconductor substrate;
the silicon nitride film formed over source and drain regions of the MISFET; and
a silicon oxide film formed over the silicon nitride film.
8 . The semiconductor device according to claim 1 ,
wherein the semiconductor substrate is in a wafer state, and
wherein the silicon nitride film is formed also on a back surface of the semiconductor substrate.