Polycrystalline diamond compacts
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm 3 /grams (“G·cm 3 /g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
1. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 10 μm to about 18 μm;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 3 weight % to 7.5 weight %;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to 175 Oe;
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm 3 /grams (“G·cm 3 /g”) to 15 G·cm 3 /g; and
a substrate bonded to the interfacial surface of the polycrystalline diamond table.
2. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region.
3. The polycrystalline diamond compact of claim 2 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
4. The polycrystalline diamond compact of claim 1 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to 175 Oe.
5. The polycrystalline diamond compact of claim 3 wherein the plurality of diamond grains and the metal-solvent catalyst of the at least an unleached portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 to about 0.090 G·cm 3 /g·Oe.
6. The polycrystalline diamond compact of claim 5 wherein the G ratio of the polycrystalline diamond table is at least about 30.0×10 6 .
7. The polycrystalline diamond compact of claim 6 wherein the polycrystalline diamond table, when unleached, exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m.
8. The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 15 μm to about 18 μm.
9. The polycrystalline diamond compact of claim 1 wherein the amount of the metal-solvent catalyst is about 3 weight % to about 6 weight %.
10. The polycrystalline diamond compact of claim 1 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide.
11. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa.
12. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface; the polycrystalline diamond table, when unleached, exhibiting a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m; at least an unleached portion of the polycrystalline diamond table including
a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 30 μm or less;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of 7.5 weight % or less;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to 175 Oe; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm 3 /grams (“G·cm 3 /g”) to 15 G·cm 3 /g;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe;
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and a substrate bonded to the interfacial surface of the polycrystalline diamond table.
13. The polycrystalline diamond compact of claim 12 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region.
14. The polycrystalline diamond compact of claim 12 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to 175 Oe.
15. The polycrystalline diamond compact of claim 12 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
16. The polycrystalline diamond compact of claim 15 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 10 μm to about 18 μm.
17. The polycrystalline diamond compact of claim 16 wherein the G ratio of at least about 30.0×10 6 .
18. The polycrystalline diamond compact of claim 16 wherein the distance cut prior to failure of the polycrystalline diamond table is about 1300 m to about 3950 m.
19. The polycrystalline diamond compact of claim 12 wherein the amount of the metal-solvent catalyst is about 3 weight % to 7.5 weight %.
20. The polycrystalline diamond compact of claim 19 wherein the amount of the metal-solvent catalyst is about 3 weight % to about 6 weight %.
21. The polycrystalline diamond compact of claim 12 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide.
22. The polycrystalline diamond compact of claim 12 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa.
23. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface; the polycrystalline diamond table formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa and a temperature of at least 1000° C., the polycrystalline diamond table exhibiting a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m; at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 10 μm to about 18 μm;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of 7.5 weight % or less;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to 175 Oe; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm 3 /grams (“G·cm 3 /g”) to 15 G·cm 3 /g;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe; and
a substrate bonded to the interfacial surface of the polycrystalline diamond table.
24. The polycrystalline diamond compact of claim 23 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region.
25. The polycrystalline diamond compact of claim 23 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
26. The polycrystalline diamond compact of claim 25 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 15 μm to about 18 μm.
27. The polycrystalline diamond compact of claim 26 wherein the amount of the metal-solvent catalyst is about 3 weight % to 7.5 weight %.
28. The polycrystalline diamond compact of claim 27 wherein the distance cut prior to failure of the polycrystalline diamond table is about 1300 m to about 3950 m.
29. The polycrystalline diamond compact of claim 23 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide.
30. The polycrystalline diamond compact of claim 12 wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .
31. The polycrystalline diamond compact of claim 23 wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .
32. The polycrystalline diamond compact of claim 22 wherein the high-pressure/high-temperature process has a temperature of about 1200° C. to about 1450° C.
33. The polycrystalline diamond compact of claim 23 wherein the temperature of the high-pressure/high-temperature process is about 1200° C. to about 1450° C.
34. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including an interfacial surface bonded to the substrate and an upper exterior surface spaced from the interfacial surface, at least a portion of the polycrystalline diamond table extending from the upper surface toward the substrate, the at least a portion of the polycrystalline diamond table including:
a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein the plurality of diamond grains exhibits an average grain size of about 30 μm or less; and
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 3 weight % to 7.5 weight %;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to 175 Oe;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm 3 /grams (“G·cm 3 /g”) to 15 G·cm 3 /g; and wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .
35. The polycrystalline diamond compact of claim 34 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
36. The polycrystalline diamond compact of claim 34 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to 175 Oe.
37. The polycrystalline diamond compact of claim 34 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa.
38. The polycrystalline diamond compact of claim 34 wherein the polycrystalline diamond table, when unleached, exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m.
39. The polycrystalline diamond compact of claim 38 wherein the average grain size of the plurality of diamond grains is about 10 μm to about 18 μm.
40. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including:
an interfacial surface bonded to the substrate;
an upper exterior surface spaced from an interfacial surface;
a plurality of diamond grains exhibiting diamond-to-diamond bonding, the plurality of diamond grains exhibiting an average diamond grain size of about 30 μm or less;
a leached portion extending from the upper exterior surface towards the interfacial surface; and
an unleached portion disposed between the substrate and the leached region;
wherein the plurality of diamond grains of each of the leached portion and the unleached portion exhibits the average grain diamond size of about 30 μm or less;
wherein at least an unleached portion of the polycrystalline diamond table including:
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 3 weight % to 7.5 weight %;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to 175 Oe;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm 3 /grams (“G·cm 3 /g”) to 15 G·cm 3 /g;
and wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .
41. The polycrystalline diamond compact of claim 40 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
42. The polycrystalline diamond compact of claim 40 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to 175 Oe.
43. The polycrystalline diamond compact of claim 40 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa.
44. The polycrystalline diamond compact of claim 40 wherein the average diamond grain size of the plurality of diamond grains is about 20 μm or less.
45. The polycrystalline diamond compact of claim 40 wherein the average diamond grain size of the plurality of diamond grains is about 10 μm to about 18 μm.
46. The polycrystalline diamond compact of claim 40 wherein the average diamond grain size of the plurality of diamond grains is about 15 μm to about 18 μm.
47. The polycrystalline diamond compact of claim 40 wherein the unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached portion of the polycrystalline diamond table.
48. The polycrystalline diamond compact of claim 40 wherein the polycrystalline diamond table, when unleached, exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m.