Light-emitting device

1. A light-emitting device, comprising:

a substrate;

an inorganic semiconductor stack formed on the substrate, comprising a top surface, wherein the top surface comprises a first region and a second region which are coplanar;

a current barrier layer formed on the first region, wherein the current barrier layer comprises an insulating material; and

a transparent conductive layer formed on the current barrier layer and the second region;

wherein the current barrier layer has a sidewall and a bottom surface facing the first region, and

wherein an angle between the sidewall and the bottom surface is between 10° and 70° C.

2. The light-emitting device of claim 1 , wherein the transparent conductive layer is formed between the sidewall of the current barrier layer and the second region of the inorganic semiconductor stack, wherein a difference between a thickness of the transparent conductive layer at the sidewall on the current barrier layer and a thickness of the transparent conductive layer on the second region of the inorganic semiconductor stack forms a ratio not larger than 10%.

3. The light-emitting device of claim 1 , further comprising:

a first electrode formed on the transparent conductive layer at a position corresponding to the current barrier layer, wherein the first electrode has a shape substantially the same as the current barrier layer.

4. The light-emitting device of claim 3 , wherein an area of the current barrier layer is larger than an area of the first electrode.

5. The light-emitting device of claim 1 , wherein a thickness of the current barrier layer is larger than 3000 angstroms and less than 9700 angstroms.

6. The light-emitting device of claim 1 , further comprising:

an electrode formed on the transparent conductive layer, wherein

the electrode comprises an electrode pad and an extended electrode; and

the current barrier layer comprises an electrode region at a position corresponding to the electrode, and an extension region not covered by the extended electrode.

7. The light-emitting device of claim 6 , wherein the inorganic semiconductor stack comprises four sides, and the extension region extends to the four sides.

8. The light-emitting device of claim 6 , wherein the electrode region has a shape substantially the same with as the electrode pad.

9. The light-emitting device of claim 3 , further comprising:

a second electrode, wherein the first electrode comprises a first electrode pad and an extended electrode extending from the first electrode pad to the second electrode.

10. The light-emitting device of claim 9 , wherein the first electrode pad and the second electrode are formed on opposite sides of the inorganic semiconductor stack.

11. The light-emitting device of claim 1 , wherein the current barrier layer comprises silicon oxide (SiO 2 ), silicon nitride (SiN x ) or titanium dioxide (TiO 2 ).

12. The light-emitting device of claim 1 , wherein the current barrier layer has a resistance larger than 10 14 Ω-cm.

13. The light-emitting device of claim 1 , wherein the substrate comprises an inclined sidewall.

14. The light-emitting device of claim 13 , wherein the inclined sidewall comprises a rough surface.

15. The light-emitting device of claim 1 , wherein the transparent conductive layer contacts the second region.