Read sensor having an insulating layer capable of use in two-dimensional magnetic recording
A magnetic read apparatus has a media-facing surface (MFS) and includes a read sensor, a magnetic bias structure and an insulating layer. The read sensor has a side, a front occupying part of the MFS and a back. The read sensor includes a free layer, a pinned layer and a barrier layer between the free and pinned layers. The barrier layer has a barrier layer coefficient of thermal expansion. The magnetic bias structure is adjacent to the side of the free layer. The insulating layer includes first and second portions. The first portion of the insulating layer is between the read sensor side and the magnetic bias structure. The second portion of the insulating layer adjoins the read sensor back. The insulating layer has an insulating layer coefficient of thermal expansion that is at least ⅓ of and not more than 5/3 of the barrier layer coefficient of thermal expansion.
1. A magnetic read apparatus having a media-facing surface (MFS), the magnetic read apparatus comprising:
a read sensor comprising a free layer, a pinned layer, and a barrier layer between the free layer and the pinned layer, the read sensor having a side surface, a front surface occupying a portion of the MFS, and a back surface opposite the front surface, the barrier layer having a barrier layer coefficient of thermal expansion;
a side magnetic bias structure adjacent to the side surface of the read sensor; and
an insulating layer comprising a first portion and a second portion, the first portion of the insulating layer being between the side surface of the read sensor and the side magnetic bias structure, the second portion of the insulating layer adjoining the back surface, the insulating layer having an insulating layer coefficient of thermal expansion, the insulating layer coefficient of thermal expansion being at least ⅓ of the barrier layer coefficient of thermal expansion and not more than 5/3 of the barrier layer coefficient of thermal expansion, and wherein each of the first portion and the second portion of the insulating layer comprises a trilayer.
2. The magnetic read apparatus of claim 1 wherein the barrier layer comprises MgO x , wherein the insulating layer comprises at least one of MgO y and silicon nitride, and wherein y is not less than 0.5 multiplied by x and not more than 1.5 multiplied by x.
3. The magnetic read apparatus of claim 1 further comprising:
an aluminum oxide refill layer, the second portion of the insulating layer being between the aluminum oxide refill layer and the back surface of the read sensor.
4. The magnetic read apparatus of claim 1 wherein the trilayer is selected from an Mg/MgO/Mg trilayer, an MgO x /Mg/MgO y trilayer and an MgO x /MgO y /MgO z trilayer, where x, y and z are greater than zero and not more than two.
5. The magnetic read apparatus of claim 4 wherein x and y are equal.
6. The magnetic read apparatus of claim 1 wherein the barrier layer comprises a particular material and the insulating layer comprises the particular material.
7. The magnetic read apparatus of claim 1 wherein the barrier layer comprises a trilayer.
8. The magnetic read apparatus of claim 1 wherein the insulating layer is at least 1.5 nanometers thick and not more than 3.5 nanometers thick.
9. The magnetic read apparatus of claim 1 wherein the barrier layer coefficient of thermal expansion matches the insulating layer coefficient of thermal expansion.
10. The magnetic read apparatus of claim 1 wherein the trilayer of the first portion of the insulating layer comprises a first layer, a second layer, and a third layer.
11. The magnetic read apparatus of claim 1 wherein the trilayer of the second portion of the insulating layer comprises a first layer, a second layer, and a third layer.
12. A data storage device comprising:
at least one medium; and
at least one magnetic read apparatus comprising a media-facing surface (MFS), the at least one magnetic read apparatus comprising a read sensor, a side magnetic bias structure and an insulating layer, the read sensor comprising a free layer, a pinned layer, and a barrier layer between the free layer and the pinned layer, the read sensor having a side surface, a front surface occupying a portion of the MFS, and a back surface opposite the front surface, the barrier layer having a barrier layer coefficient of thermal expansion, the side magnetic bias structure being adjacent to the side surface of the read sensor, the insulating layer comprising a first portion and a second portion,
the first portion of the insulating layer being between the side surface of the read sensor and the side magnetic bias structure, the second portion of the insulating layer adjoining the back surface, the insulating layer having an insulating layer coefficient of thermal expansion, the insulating layer coefficient of thermal expansion being at least ⅓ of the barrier layer coefficient of thermal expansion and not more than 5/3 of the barrier layer coefficient of thermal expansion, and wherein each of the first portion and the second portion of the insulating layer comprises a trilayer.
13. The data storage device of claim 12 wherein the barrier layer comprises MgO x and wherein the insulating layer comprises at least one of MgO y and silicon nitride, and wherein y is not less than 0.5 multiplied by x and not more than 1.5 multiplied by x.
14. The data storage device of claim 12 wherein the trilayer is selected from an Mg/MgO/Mg trilayer, an MgO x /Mg/MgO y trilayer and an MgO x /MgO y /MgO z trilayer, where x, y and z are greater than zero and not more than two.
15. The data storage device of claim 12 wherein the barrier layer comprises a particular material and the insulating layer comprises the particular material.
16. A method for providing a magnetic read apparatus having a media-facing surface (WS), the method comprising:
providing a read sensor, the step of providing the read sensor comprising:
providing a free layer;
providing a pinned layer; and
providing a barrier layer between the free layer and the pinned layer, the read sensor having a side surface, a front surface occupying a portion of the MFS, and a back surface opposite the front surface, the barrier layer having a barrier layer coefficient of thermal expansion;
providing a side magnetic bias structure adjacent to the side surface of the read sensor; and
providing an insulating layer comprising a first portion and a second portion, the first portion of the insulating layer being between the side surface of the read sensor and the side magnetic bias structure, the second portion of the insulating layer adjoining the back surface, the insulating layer having an insulating layer coefficient of thermal expansion, the insulating layer coefficient of thermal expansion being at least ⅓ of the barrier layer coefficient of thermal expansion and not more than 5/3 of the barrier layer coefficient of thermal expansion, and wherein each of the first portion and the second portion of the insulating layer comprises a trilayer.
17. The method of claim 16 wherein the barrier layer comprises MgO x and wherein the insulating layer comprises at least one of MgO y and silicon nitride, and wherein y is not less than 0.5 multiplied by x and not more than 1.5 multiplied by x.
18. The method of claim 16 wherein the step of providing the barrier layer comprises:
providing the barrier layer selected from an Mg/MgO/Mg trilayer, an MgO x /Mg/MgO y trilayer and an MgO x /MgO y /MgO z trilayer, where x, y and z are greater than zero and not more than two; and
wherein the step of providing the insulating layer comprises providing the trilayer selected from an additional Mg/MgO/Mg trilayer, an MgO y /Mg/MgO w layer and an MgO v /MgO w /MgO u , where u, w and v are greater than zero and not more than two.
19. The method of claim 16 wherein the step of providing the barrier layer comprises:
providing a first insulating layer using a first process;
wherein the step of providing the insulating layer comprises providing a second insulating layer using the first process.
20. The method of claim 16 wherein the step of providing the barrier layer comprises:
providing a first sublayer of the barrier layer using a first process;
providing a second sublayer of the barrier layer using a second process; and
providing a third sublayer of the barrier layer using a third process, the first sublayer, the second sublayer and the third sublayer forming the barrier layer; and
wherein the step of providing the insulating layer comprises
providing a first layer of the insulating layer using the first process;
providing a second layer of the insulating layer using the second process; and
providing a third layer of the insulating layer using the third process.