Dichlorosilane compensating control strategy for improved polycrystalline silicon growth
A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline silicon onto the substrate.
1. A method comprising:
providing a reactor having a deposition chamber for deposition of polycrystalline silicon on a substrate from a composition comprising trichlorosilane, dichlorosilane and hydrogen;
obtaining a proportionality constant for the reactor for determining optimal feed adjustment for the reactor from historical operation of the deposition chamber, experimental runs of the deposition chamber, or both comparing reactor performance data from runs with different trichlorosilane feed compositions and high or low relative levels of dichlorosilane;
introducing hydrogen and a chlorosilane feed to the deposition chamber, wherein the chlorosilane feed comprises trichlorosilane and an amount of dichlorosilane which varies;
measuring the amount of dichlorosilane in the chlorosilane feed;
adjusting an amount of the chlorosilane feed being introduced to the deposition chamber based on the measured amount of dichlorosilane in the chlorosilane feed and the proportionality constant; and
depositing polycrystalline silicon on the substrate.
2. The method of claim 1 , characterized by one or more of pressure in the deposition chamber is greater than or equal to 0.5 Pascals, gas temperature within the deposition chamber is less than or equal to 750° C., substrate temperature is greater than or equal to 900° C.
3. The method of claim 1 , wherein the chlorosilane feed composition contains 1 to 15 mol % dichlorosilane.
4. The method of claim 1 , wherein the amount of dichlorosilane present in the chlorosilane feed composition is continuously measured during a batch run of the reactor.
5. The method of claim 1 , wherein the chlorosilane feed composition is pre-blended with hydrogen.
6. The method of claim 1 , wherein the amount of hydrogen is 5 to 65 mol % based on total amount of hydrogen and chlorosilane feed.
7. The method of claim 1 wherein proportionality constant is the slope of trichlorosilane mol % offset as a function of dichlorosilane offset.
8. A method comprising:
providing a plurality of reactors each having a deposition chamber for deposition of polycrystalline silicon on a substrate;
combining effluent from the plurality of reactors and processing the effluent to form a recycle stream comprising dichlorosilane and trichlorosilane wherein a fraction of the dichlorosilane in the recycle stream varies;
blending a portion of the recycle stream with additional trichlorosilane to form a chlorosilane feed comprising chlorosilanes wherein the chlorosilanes in the feed are dichlorosilane and trichlorosilane and a fraction of the dichlorosilane in the chlorosilane feed varies;
blending an amount of the chlorosilane feed with an amount of hydrogen to form a feed composition having a mol % of the chlorosilanes in hydrogen
introducing the feed composition to the deposition chamber of one or more of the plurality of reactors at a total flow for each reactor;
measuring the amount of dichlorosilane present in the chlorosilane feed and determining for each of the one or more of the plurality of reactors an offset value from a target value of dichlorosilane present in the chlorosilane feed for said each of the one or more of the plurality of reactors;
adjusting the chlorosilane feed mole percent of the total flow into the deposition chamber of each of the one or more of the plurality of reactors by an amount inversely proportional to the dichlorosilane offset value for said each of the one or more of the plurality of reactors; and
depositing polycrystalline silicon onto the substrates in each of said one or more of the plurality of reactors.
9. The method of claim 8 , characterized by one or more of pressure in the deposition chamber of each of the one or more of the plurality of reactors is greater than or equal to 0.5 Pascals, gas temperature within the deposition chamber of each of the one or more of the plurality of reactors is less than or equal to 750° C., substrate temperature is greater than or equal to 900° C.
10. The method of claim 8 , wherein the chlorosilane feed contains 1 to 15 mol % dichlorosilane.
11. The method of claim 8 , wherein the amount of dichlorosilane present in the chlorosilane feed composition is continuously measured during a batch run of the one or more of the plurality of reactors.
12. The method of claim 8 , wherein the amount of hydrogen is 5 to 65 mol % based on total amount of hydrogen and chlorosilanes.