CEM switching device
Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a correlated electron material. In embodiments, processes are described which may be useful for avoiding a resistive layer which tends to form between the correlated electron material and a conductive substrate and/or overlay.
1. A method for the manufacture of a switching device, which method comprises:
forming a conductive substrate and forming a primary layer of a correlated electron material on the conductive substrate,
wherein the forming of the conductive substrate comprises forming at least a portion of the conductive substrate incorporating a dopant prior to forming the primary layer on the conductive substrate, and
wherein the forming of the primary layer to lead to formation of a first secondary layer of a correlated electron material between the primary layer and the conductive substrate.
2. The method according to claim 1 , further comprising forming the at least a portion of the conductive substrate by depositing a layer of doped metal or metal compound, or a combination thereof, or by depositing a layer of a metal or metal compound, or a combination thereof, and treating the deposited layer to incorporate the dopant.
3. The method according to claim 2 , comprising treating the deposited layer by annealing the deposited layer following formation of the primary layer.
4. The method according to claim 1 , wherein the forming of the conductive substrate comprises employing a physical vapour deposition or a chemical vapour deposition.
5. The method according to claim 4 , wherein the physical vapour deposition or the chemical vapour deposition employs an organometallic or organic precursor.
6. The method according to claim 4 , wherein the physical vapour deposition or chemical vapour deposition employs an inorganic precursor.
7. The method according to claim 1 , further comprising forming a conductive overlay on the primary layer, wherein the forming of the conductive overlay comprises forming at least a portion of the conductive overlay to incorporate a dopant to lead to formation of a second secondary layer of correlated electron material between the primary layer and the conductive overlay.
8. A switching device comprising:
a primary layer of correlated electron material to be disposed over a conductive substrate and a conductive overlay to be disposed over the primary layer;
a first secondary layer of correlated electron material to be disposed between the primary layer and the conductive substrate; and
a second secondary layer of correlated electron material to be disposed between the primary layer and the conductive overlay,
wherein the conductive substrate and/or conductive overlay to comprise a metal or metal compound comprising titanium nitride, tantalum nitride or tungsten nitride or a combination thereof, and
wherein the primary layer comprises doped nickel oxide.
9. The switching device according to claim 8 , wherein the doped nickel oxide to comprise a carbon-containing dopant or a nitrogen containing dopant, or a combination thereof.
10. A switching device comprising:
a primary layer of a correlated electron material to be disposed between a conductive substrate and a conductive overlay;
a first secondary layer of the correlated electron material to be disposed between the primary layer and the conductive substrate; and
a second secondary layer of correlated electron material to be disposed between the primary layer and the conductive overlay,
wherein the conductive substrate and/or conductive overlay to comprise a metal or metal compound comprising titanium nitride, tantalum nitride or tungsten nitride, or a combination thereof, and
wherein the first secondary layer and/or the second secondary layer to be free from unbound metal, the unbound metal to be in a zero oxidation state.