Non-volatile memory device
A non-volatile memory device according to an embodiment includes a first conductive layer, a second conductive layer including metal nitride, the metal nitride absorbing oxygen, a paraelectric layer disposed between the first conductive layer and the second conductive layer, a ferroelectric layer disposed between the paraelectric layer and the second conductive layer, the ferroelectric layer including hafnium oxide, at least one third conductive layer disposed on opposite side of at least one of the first conductive layer and the second conductive layer to the ferroelectric layer, the at least one third conductive layer including metal oxide, the metal oxide having oxygen ratio larger than stoichiometric ratio, and a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the paraelectric layer and the ferroelectric layer.
1. A non-volatile memory device, comprising:
a first conductive layer;
a second conductive layer including metal nitride, the metal nitride absorbing oxygen;
a paraelectric layer disposed between the first conductive layer and the second conductive layer;
a ferroelectric layer disposed between the paraelectric layer and the second conductive layer, the ferroelectric layer including hafnium oxide;
at least one third conductive layer disposed on opposite side of at least one of the first conductive layer and the second conductive layer to the ferroelectric layer, the at least one third conductive layer including metal oxide, the metal oxide having oxygen ratio larger than stoichiometric ratio; and
a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the paraelectric layer and the ferroelectric layer.
2. The device according to claim 1 , wherein the metal nitride is titanium nitride.
3. The device according to claim 1 , wherein the hafnium oxide includes a crystal structure of a space group Pbc2 1 (space group number 29).
4. The device according to claim 1 , wherein the metal oxide is ruthenium oxide.
5. A non-volatile memory device, comprising:
a first conductive layer including metal oxide, the metal oxide having oxygen ratio larger than stoichiometric ratio;
a second conductive layer including metal nitride, the metal nitride absorbing oxygen;
a paraelectric layer disposed between the first conductive layer and the second conductive layer;
a ferroelectric layer disposed between the paraelectric layer and the second conductive layer, the ferroelectric layer including hafnium oxide; and
a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the paraelectric layer and the ferroelectric layer.
6. The device according to claim 5 , wherein the metal nitride is titanium nitride.
7. The device according to claim 5 , wherein the hafnium oxide includes a crystal structure of a space group Pbc2 1 (space group number 29).
8. The device according to claim 5 , wherein the metal oxide is ruthenium oxide.
9. A non-volatile memory device, comprising:
a first conductive layer;
a second conductive layer including metal nitride, the metal nitride absorbing oxygen;
an insulating layer disposed between the first conductive layer and the second conductive layer, the insulating layer having oxygen non-stoichiometric composition;
a ferroelectric layer disposed between the insulating layer and the second conductive layer, the ferroelectric layer including hafnium oxide; and
a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the insulating layer and the ferroelectric layer.
10. The device according to claim 9 , wherein the hafnium oxide includes a crystal structure of a space group Pbc2 1 (space group number 29).