Solid-state imaging device
A solid-state imaging device includes unit pixels arrayed two dimensionally in a pixel area, wherein: a unit pixel disposed in a central region of the pixel area includes a first collecting element having a convex surface and a unit pixel in a region of the pixel area not including the central region includes a second collecting element having a convex surface and grooves having widths less than or equal to a wavelength of incident light; the second collecting element includes a sparse region and a dense region in which a density of formations of the grooves is higher than in the sparse region; and the sparse region is positioned closer to the central region of the pixel area than the dense region.
1. A solid-state imaging device comprising
unit pixels arrayed two-dimensionally in a pixel area of a substrate,
the unit pixels including, in one-to-one correspondence:
photoelectric converters; and
collecting elements which collect incident light, the collecting elements including:
a first collecting element having a convex surface, the first collecting element being formed in a unit pixel disposed in a central region of the pixel area among the unit pixels; and
a second collecting element having a convex surface and grooves having widths less than or equal to a wavelength of the incident light, the second collecting element being formed in a unit pixel disposed in a region of the pixel area not including the central region, among the unit pixels, wherein
the second collecting element has, in plan view of the substrate: a sparse region; and a dense region in which a density of formations of the grooves is higher than the density of formations of the grooves in the sparse region, and
the sparse region of the second collecting element is positioned closer to the central region of the pixel area than the dense region of the second collecting element is.
2. The solid-state imaging device according to claim 1 , wherein
the widths of the grooves are λ/2n or less,
where λ represents the wavelength of the incident light and n represents an index of refraction of a material forming the second collecting element.
3. The solid-state imaging device according to claim 1 , wherein
the density of formations of the grooves in the dense region is higher on a sparse region side than in a central region of the dense region.
4. The solid-state imaging device according to claim
among the unit pixels, the density of formations of the grooves in a unit pixel at a first distance from the central region of the pixel area is higher than the density of formations of the grooves in a unit pixel at a second distance from the central region of the pixel area, the first distance being greater than the second distance.
5. The solid-state imaging device according to claim 1 , wherein
the grooves are disposed in parallel to one another.
6. The solid-state imaging device according to claim 1 , wherein
the grooves in the second collecting element linearly extend in a direction intersecting a straight line joining a center of the pixel area and a center of the unit pixel that includes the second collecting element.
7. The solid-state imaging device according to claim 1 , wherein
the grooves extend in two or more different directions in at least a portion of the second collecting element.
8. The solid-state imaging device according to claim 1 , wherein
the collecting elements are planar oval, or planar rectangular.
9. The solid-state imaging device according to claim 1 , wherein
positions of bottoms of the grooves in the second collecting element are constant.
10. The solid-state imaging device according to claim 1 , wherein
the grooves in the second collecting element have a constant depth.
11. The solid-state imaging device according to claim 1 , wherein
the convex surface of the first collecting element and the convex surface of the second collecting element each have a radius of curvature of 10 μm or less.
12. The solid-state imaging device according to claim 1 , wherein
the unit pixels each include:
one of the photoelectric converters on a first major surface of the substrate; and
a line portion on a second major surface of the substrate, the first major surface and the second major surface being opposing surfaces of the substrate, and
the second collecting element is disposed over the first major surface.
13. The solid-state imaging device according to claim 1 , wherein
the unit pixels each include:
one of the photoelectric converters on a first major surface of the substrate;
a line portion over the first major surface of the substrate; and
a color filter over the line portion, and
the second collecting element is disposed between the color filter and the photoelectric converter.