Magnetoresistive memory device
A magnetoresistive memory device includes a variable resistance element and a read circuit. The resistance element has a resistance state, which is one of switchable first and second resistance states. The first and second resistance states exhibit different resistances. Each of the first and second resistance states is reached by a current flowing through the variable resistance element in one of opposing first and second directions. The read circuit passes a read current through the variable resistance element autonomously in the first or second direction in accordance with the resistance state of the variable resistance element.
1. A magnetoresistive memory device comprising:
a variable resistance element comprising a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers, the variable resistance element having a resistance state, the resistance state being one of switchable first and second resistance states, the first and second resistance states exhibiting different resistances, and each of the first and second resistance states being reached by a current flowing through the first magnetic layer, the second magnetic layer, and the nonmagnetic layer in one of opposing first and second directions; and
a read circuit which passes a read current through the first magnetic layer, the second magnetic layer, and the nonmagnetic layer autonomously in the first or second direction in accordance with the resistance state of the variable resistance element.
2. The device of claim 1 , wherein:
a write current of the first direction and a write current of the second direction set the variable resistance element to the first and second resistance states, respectively, and
the read circuit:
passes the read current in the first direction when the variable resistance element is in the first resistance state, and
passes the read current in the second direction when the variable resistance element is in the second resistance state.
3. The device of claim 2 , wherein the read circuit comprises:
a first switch that is coupled between a power supply node and a first node of the variable resistance element and is turned on upon reception of a first potential;
a second switch that is coupled between the power supply node and a second node of the variable resistance element and is turned on upon reception of a second potential;
a third switch that is coupled between the first node of the variable resistance element and a ground node and is turned on upon reception of a third potential higher than any of the first potential and the second potential; and
a resistance element coupled between the second node of the variable resistance element and the ground node.
4. The device of claim 3 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the second node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
5. The device of claim 4 , wherein the read circuit:
receives substantially the same potential at the first and second nodes while the variable resistance element is not accessed, and
receives different potentials at the first and second nodes when the variable resistance element is accessed for read.
6. The device of claim 5 , wherein the read circuit autonomously passes the read current through the first magnetic layer, the second magnetic layer, and the nonmagnetic layer in the first or second direction after completion of reception of the potentials different between the first and second nodes.
7. The device of claim 1 , wherein the resistance state of the variable resistance element is based on a state of magnetization of the variable resistance element.
8. The device of claim 1 , wherein the variable resistance element has the first or second resistance state in accordance with a combination of orientations of magnetization of the first magnetic layer and magnetization of the second magnetic layer.
9. The device of claim 3 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the first node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
10. The device of claim 9 , wherein the read circuit:
receives substantially the same potential at the first and second nodes while the variable resistance element is not accessed, and
receives different potentials at the first and second nodes when the variable resistance element is accessed for read.
11. The device of claim 10 , wherein the read circuit autonomously passes the read current through the first magnetic layer, the second magnetic layer, and the nonmagnetic layer in the first or second direction after completion of reception of the potentials different between the first and second nodes.
12. A magnetoresistive memory device comprising:
a variable resistance element having a resistance state, the resistance state being one of switchable first and second resistance states, the first and second resistance states exhibiting different resistances, and each of the first and second resistance states being reached by a current flowing through the variable resistance element in one of opposing first and second directions; and
a read circuit which passes a read current to the variable resistance element, wherein the read circuit comprises:
a first switch that is coupled between a power supply node and a first node of the variable resistance element and is turned on upon reception of a first potential,
a second switch that is coupled between the power supply node and a second node of the variable resistance element and is turned on upon reception of a second potential,
a third switch that is coupled between the first node of the variable resistance element and a ground node and is turned on upon reception of a third potential higher than any of the first potential and the second potential, and
a resistance element coupled between the second node of the variable resistance element and the ground node.
13. The device of claim 12 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the second node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
14. The device of claim 12 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the first node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
15. The device of claim 12 , wherein the variable resistance element comprises a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers.
16. A magnetoresistive memory device comprising:
a variable resistance element;
a first switch that is coupled between a power supply node and a first node of the variable resistance element and is turned on upon reception of a first potential;
a second switch that is coupled between the power supply node and a second node of the variable resistance element and is turned on upon reception of a second potential;
a third switch that is coupled between the first node of the variable resistance element and a ground node and is turned on upon reception of a third potential; and
a resistance element coupled between the second node of the variable resistance element and the ground node.
17. The device of claim 16 , wherein the third potential is higher than any of the first potential and the second potential.
18. The device of claim 16 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the second node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
19. The device of claim 16 , wherein:
the first switch comprises a p-type metal oxide semiconductor field effect transistor (MOSFET) coupled to the first node of the variable resistance element at a gate,
the second switch comprises a p-type MOSFET coupled to the first node of the variable resistance element at a gate, and
the third switch comprises an n-type MOSFET coupled to the second node of the variable resistance element at a gate.
20. The device of claim 16 , wherein the variable resistance element comprises a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers.