PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In one embodiment, a plasma processing apparatus includes an electrostatic chuck configured to hold a substrate. The apparatus further includes a surrounding member holder configured to hold a surrounding member that surrounds an edge portion of the substrate. The apparatus further includes a plasma feeder configured to feed plasma for processing the substrate to a side of a first face of the substrate. The apparatus further includes a gas feeder configured to feed a gas to a space between the edge portion of the substrate and the surrounding member by discharging the gas to a side of a second face of the substrate from a gas hole provided on a side face of the electrostatic chuck or a gas hole provided in the surrounding member.
1 . A plasma processing apparatus comprising:
an electrostatic chuck configured to hold a substrate;
a surrounding member holder configured to hold a surrounding member that surrounds an edge portion of the substrate;
a plasma feeder configured to feed plasma for processing the substrate to a side of a first face of the substrate; and
a gas feeder configured to feed a gas to a space between the edge portion of the substrate and the surrounding member by discharging the gas to a side of a second face of the substrate from a gas hole provided on a side face of the electrostatic chuck or a gas hole provided in the surrounding member.
2 . The apparatus of claim 1 , wherein the gas is an inert gas.
3 . The apparatus of claim 1 , further comprising a flow rate controller configured to control a flow rate of the gas discharged from the gas hole.
4 . The apparatus of claim 1 , wherein the gas feeder comprises a coolant feeder configured to feed a coolant for cooling the substrate to the substrate, and discharges the coolant as the gas from the gas hole.
5 . The apparatus of claim 4 , wherein the electrostatic chuck comprises a first flow path for feeding the coolant to the substrate, and a second flow path for discharging the coolant as the gas from the gas hole.
6 . The apparatus of claim 5 , wherein the electrostatic chuck comprises a plurality of holes as the gas hole, and comprises a plurality of paths connected to the plurality of holes as the second flow path.
7 . The apparatus of claim 6 , wherein the plurality of paths extend radially in vicinities of the plurality of holes.
8 . The apparatus of claim 4 , wherein
the electrostatic chuck comprises a first flow path for feeding the coolant to the substrate, and
the surrounding member comprises a second flow path for feeding the coolant as the gas from the gas hole.
9 . The apparatus of claim 1 , wherein the plasma feeder comprises a process gas feeder configured to feed a process gas for generating the plasma, a first electrode provided outside the electrostatic chuck, and a second electrode provided in the electrostatic chuck, and generates the plasma from the process gas by the first and second electrodes.
10 . The apparatus of claim 1 , wherein the plasma feeder feeds the plasma for etching the substrate.
11 . A method of manufacturing a semiconductor device, comprising:
holding a substrate by an electrostatic chuck;
surrounding an edge portion of the substrate by a surrounding member;
feeding plasma for processing the substrate to a side of a first face of the substrate; and
feeding a gas to a space between the edge portion of the substrate and the surrounding member by discharging the gas to a side of a second face of the substrate from a gas hole provided on a side face of the electrostatic chuck or a gas hole provided in the surrounding member.
12 . The method of claim 11 , wherein the gas is an inert gas.
13 . The method of claim 11 , further comprising controlling, by a flow rate controller, a flow rate of the gas discharged from the gas hole.
14 . The method of claim 11 , further comprising feeding a coolant for cooling the substrate to the substrate, and discharging the coolant as the gas from the gas hole.
15 . The method of claim 14 , wherein the electrostatic chuck comprises a first flow path for feeding the coolant to the substrate, and a second flow path for discharging the coolant as the gas from the gas hole.
16 . The method of claim 15 , wherein the electrostatic chuck comprises a plurality of holes as the gas hole, and comprises a plurality of paths connected to the plurality of holes as the second flow path.
17 . The method of claim 16 , wherein the plurality of paths extend radially in vicinities of the plurality of holes.
18 . The method of claim 14 , wherein
the electrostatic chuck comprises a first flow path for feeding the coolant to the substrate, and
the surrounding member comprises a second flow path for feeding the coolant as the gas from the gas hole.
19 . The method of claim 11 , further comprising:
feeding a process gas for generating the plasma; and
generating the plasma from the process gas by a first electrode provided outside the electrostatic chuck and a second electrode provided in the electrostatic chuck.
20 . The method of claim 11 , further comprising etching the substrate with the plasma.