IP Library Granted Patent US 9,960,007
Granted Patent B2
US 9,960,007 · App. 15/251,554 · Granted May 1, 2018

Electron beam irradiation device

Inventors: Kazuto Matsuki (Tokyo, JP); Ryoichi Susuki (Kanagawa, JP); Hiroyuki Kashiwagi (Kanagawa, JP); Takashi Sato (Kanagawa, JP)
Assignee: Toshiba Memory Corporation
H01J37/073H01J37/20H01J2237/202
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Quick Facts
Patent No.
US 9,960,007
App. No.
15/251,554
Granted
May 1, 2018
Kind
B2
Abstract

An electron beam irradiation device includes a stage, a main body unit, and a first mechanism. The main body unit includes a substrate, first members, and a first layer. The first members are arranged to be separated in a second direction intersecting a first direction and is provided at a first surface of the substrate opposing the stage. The first layer is provided between the stage and the first members and between the stage and the substrate. The first layer converts a light ray into an electron beam. The first mechanism is provided in the stage and moves the stage in the second direction. A distance of the movement is not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.

Claims (51)

1. An electron beam irradiation device, comprising:

a stage to support an irradiation object to be placed thereon;

a main body unit provided above the stage, the main body unit including

a substrate to transmit a light ray,

a plurality of first members arranged to be separated from each other in a second direction and provided at a first surface of the substrate opposing the stage so as to generate surface plasmon resonance when the light ray is transmitted through the substrate, the second direction intersecting a first direction, the first direction being from the stage toward the substrate, and

a first layer provided between the stage and the plurality of first members and between the stage and the substrate, the first layer converting the light ray into an electron beam for irradiating the irradiation object; and

a first mechanism provided in at least one of the stage or the main body unit, the first mechanism moving at least one of the stage or the main body unit relatively in the second direction,

a distance of the movement being not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.

2. The device according to claim 1 , wherein the first mechanism repeats the movement with a first axis along the first direction as a center.

3. The device according to claim 1 , wherein the spacing is 2 micrometers or less.

4. The device according to claim 1 , wherein a wavelength of the light ray is not less than 100 nanometers and not more than 400 nanometers.

5. The device according to claim 1 , wherein

the substrate has an upper surface, and

the light ray enters from the upper surface.

6. The device according to claim 1 , wherein the first member includes at least one selected from the group consisting of gold, silver, titanium, aluminum, and chrome.

7. The device according to claim 1 , wherein the first layer includes at least one of gold or ruthenium.

8. An electron beam irradiation device, comprising:

a stage to support an irradiation object to be placed thereon;

a main body unit provided above the stage, the main body unit including

a substrate to transmit a light ray,

a plurality of first members arranged to be separated from each other in a second direction and provided at a first surface of the substrate opposing the stage so as to generate surface plasmon resonance when the light ray is transmitted through the substrate, the second direction intersecting a first direction, the first direction being from the stage toward the substrate, and

a first layer provided between the stage and the plurality of first members and between the stage and the substrate, the first layer converting the light ray into an electron beam for irradiating the irradiation object; and

a first mechanism provided between the stage and the main body unit, the first mechanism changing a direction of the electron beam by generating a magnetic field or an electric field.

9. The device according to claim 8 , wherein

the first mechanism includes a first electron lens unit and a second electron lens unit, the electron beam being incident on the first electron lens unit, the second electron lens unit being provided between the first electron lens unit and the stage, and

a focal point of the electron beam is positioned between the first electron lens unit and the second electron lens unit.

10. The device according to claim 8 , wherein a wavelength of the light ray is not less than 100 nanometers and not more than 400 nanometers.

11. An electron beam irradiation device, comprising:

a stage to support an irradiation object to be placed thereon;

a main body unit provided above the stage, the main body unit including

a substrate to transmit a light ray,

a plurality of first members arranged to be separated from each other in a second direction and provided at a first surface of the substrate opposing the stage so as to generate surface plasmon resonance when the light ray is transmitted through the substrate, the second direction intersecting a first direction, the first direction being from the stage toward the substrate, and

a first layer provided between the stage and the plurality of first members and between the stage and the substrate, the first layer converting the light ray into an electron beam for irradiating the irradiation object; and

a first mechanism provided in at least one of the stage or the main body unit, the first mechanism moving at least one of the stage or the main body unit relatively in the second direction.

12. The device according to claim 11 , wherein a length along the second direction of the main body unit is shorter than a length along the second direction of the stage.

13. The device according to claim 11 , further comprising a second mechanism provided between the main body unit and the stage,

the second mechanism changing a direction of the electron beam by generating a magnetic field or an electric field.

14. The device according to claim 11 , wherein a wavelength of the light ray is not less than 100 nanometers and not more than 400 nanometers.

15. An electron beam irradiation device, comprising:

a stage to support an irradiation object to be placed thereon;

a main body unit provided above the stage, the main body unit including

a substrate to transmit a light ray,

a plurality of first members arranged to be separated from each other in a second direction and provided at a first surface of the substrate opposing the stage so as to generate surface plasmon resonance when the light ray is transmitted through the substrate, the second direction intersecting a first direction, the first direction being from the stage toward the substrate, and

a first layer provided between the stage and the plurality of first members and between the stage and the substrate, the first layer converting the light ray into an electron beam for irradiating the irradiation object; and

a first mechanism provided between the stage and the main body unit, the first mechanism moving an irradiation position of the electron beam in the second direction by deflecting the electron beam,

a distance of the movement being not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.

16. The device according to claim 15 , wherein the first mechanism repeats the movement with a first axis along the first direction as a center.

17. The device according to claim 15 , further comprising a second mechanism provided between the first mechanism and the main body unit,

the second mechanism changing a direction of the electron beam by generating a magnetic field or an electric field.

18. The device according to claim 15 , wherein the spacing is 2 micrometers or less.

19. The device according to claim 15 , wherein a wavelength of the light ray is not less than 100 nanometers and not more than 400 nanometers.

Assignments (6)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2017
From: MATSUKI, KAZUTO; SUZUKI, RYOICHI; KASHIWAGI, HIROYUKI; SATO, TAKASHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 043786/0193 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE POSTAL CODE PREVIOUSLY RECORDED ON REEL 042910 FRAME 0321. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Sep 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043747/0290 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 042910/0321 →
Priority Claims (1)
JP 2015-180089 · Sep 11, 2015 · national
Continuity (1)
Related Publication 20170076907A1 · Mar 16, 2017