Pattern accuracy detecting apparatus and processing system

1. A pattern accuracy detecting apparatus comprising:

a stage for supporting a substrate;

an optical warpage detecting unit configured to measure a warpage of a substrate disposed on the stage;

an optical pattern detection unit configured to detect a position of a pattern on the substrate; and

a processing unit programmed to:

determine an alignment difference between a first position of a first pattern of a first film that is formed on the substrate by a first process and a second position of a second pattern of a second film that is formed on the substrate by a second process, wherein the first and second positions have been detected by the optical pattern detection unit,

determine a difference between a first warpage of the substrate that has been measured by the optical warpage detecting unit during the first process and a second warpage of the substrate that has been measured by the optical warpage detecting unit during the second process, and

correct the alignment difference based on the difference between the first warpage and the second warpage.

2. The apparatus according to claim 1 ,

wherein the optical warpage detecting unit comprises a first shape detecting unit configured to measure a warpage of a first surface of the substrate disposed on the stage and a second shape detecting unit configured to measure a warpage of a second surface of the substrate disposed on the stage.

3. The apparatus according to claim 2 ,

wherein each of the first and second shape detecting units is an optical reflection device.

4. The apparatus according to claim 1 , further comprising:

a temperature detection unit.

5. The apparatus according to claim 4 ,

wherein the temperature detection unit is a temperature distribution detector.

6. The apparatus according to claim 1 , wherein the stage is configured to adhere a substrate thereto.

7. The apparatus according to claim 6 , wherein the first warpage and the second warpage are measured by the optical warpage detecting unit when the substrate rests on one or more supporting units of the stage and is not adhered to the stage during the first and second processes, respectively.

8. The apparatus according to claim 7 , wherein the first and second positions are detected by the optical pattern detection unit when the substrate is adhered to the stage during the first and second processes, respectively.

9. A substrate processing system comprising:

a warpage detecting unit configured to measure a warpage of a substrate;

a processor configured to determine a difference between a first warpage of the substrate in a first state and a second warpage of the substrate in a second state after the first state, which warpages have been measured by the warpage detecting unit, wherein a first film including a first pattern is disposed on a first surface of the substrate in the first state, and a second film is disposed on the first surface in the second state; and

a processing device configured to control a process for forming a second pattern by processing the second film based on the difference between the measured first warpage and the measured second warpage,

wherein the warpage detecting unit comprises a first shape detecting unit for detecting the warpage of a first side of the substrate and a second shape detecting unit for detecting the warpage of a second side of the substrate opposite from the first side.

10. The system according to claim 9 ,

wherein the first shape detecting unit and the second shape detecting unit are each optical reflection devices.

11. The system according to claim 9 ,

wherein the processing device includes at least one of an etch device and a lithography device.

12. The system according to claim 9 , further comprising:

a temperature detecting unit.

13. The system according to claim 12 , wherein the temperature detecting unit is a temperature distribution detector.