Method for manufacturing electronic component and manufacturing apparatus of electronic component

1. A method for manufacturing an electronic component, comprising:

positioning a first surface of a first component in a facing relationship with a second surface of a second component in a first state, wherein the first surface has a first pad having a first geometric center, wherein the second surface has a second pad having a second geometric center, and wherein at least one of the first pad or the second pad includes a metal member thereon;

melting the metal member and moving the first component and the second component with respect to each other until the melted metal member contacts both the first pad and the second pad;

after the melted metal member contacts both the first pad and the second pad, moving at least one of the first component or the second component in a direction along the first surface based on detection of a relative position of the first component and the second component; and

solidifying the metal member in a second state after moving at least one of the first component or the second component in the direction along the first surface,

wherein a first distance in the direction along the first surface between the first geometric center of the first pad in the first state and the second geometric center of the second pad in the first state is longer than a second distance in the direction along the first surface between the first geometric center of the first pad in the second state and the second geometric center of the second pad in the second state, wherein the melted metal member includes a void before moving at least one of the first component or the second component in the direction along the first surface, and a volume of the void is reduced by moving at least one of the first component or the second component in the direction along the first surface.

2. The method according to claim 1 ,

wherein in the first state, the metal member includes a bump provided on a surface of the first pad or a surface of the second pad.

3. The method according to claim 1 ,

wherein the first pad is recessed within a first outer edge region of the first component located adjacent to the first pad.

4. The method according to claim 1 ,

wherein one of the first component or the second component is moved a distance in the direction along the first surface when moving at least one of the first component or the second component, and

wherein the moved distance is equal to or greater than 10% and equal to or less than 90% of an average value of a maximum value of a length of the first pad along the moving direction and a maximum value of the length of the second pad along the moving direction.

5. The method according to claim 1 , further comprising:

holding the first component in a head and moving the first component along the first surface when moving at least one of the first component or the second component.

6. The method according to claim 1 , wherein the first component is the uppermost substrate of a plurality of stacked substrates.

7. The method according to claim 1 , wherein the metal member is provided on one of the first pad or the second pad prior to the first state.

8. The method according to claim 1 , wherein the first component comprises a semiconductor package.

9. A method of electrically connecting a first substrate and a second substrate, wherein the first substrate has a first conductive pad thereon, the first conductive pad comprising a generally planar surface having a center, and the second substrate has a second conductive pad thereon, the second conductive pad comprising a generally planar surface having a center, said method comprising:

providing a metal member having a lower melting temperature than the material of the first conductive pad and the second conductive pad on at least one of the first conductive pad or the second conductive pad;

locating the first conductive pad on the first substrate in a facing relationship with the second conductive pad on the second substrate, wherein the center of the first conductive pad is offset from the center of the second conductive pad in a direction of the planar surface of one of the first conductive pad or the second conductive pad by a first distance;

melting the metal member;

moving the first and second substrates relative to each other to bring the metal member in the melted state into contact with both the first and the second conductive pads; and

moving the first and second substrates relative to each other, based on detection of a relative position of the first substrate and the second substrate, in the direction of the planar surface of one of the first conductive pad or the second conductive pad and returning the metal member to a solid state, wherein

when the metal member returns to the solid state, the distance between the center of the first conductive pad and the center of the second conductive pad is a second distance, and the second distance is less than the first distance, and the melted metal member includes a void before moving the first and second substrates relative to each other in the direction of the planar surface of one of the first conductive pad or the second conductive pad, and a volume of the void is reduced by moving the first and second substrates relative to each other in the direction of the planar surface of one of the first conductive pad or the second conductive pad.

10. The method of claim 9 , further comprising:

providing a first insulating layer on the first substrate; and

providing an opening in the first insulating layer, wherein the first conductive pad is exposed therein.

11. The method of claim 10 , wherein the first conductive pad is recessed in the opening in the first insulating layer.

12. The method of claim 11 , further comprising:

providing a flux on the first conductive pad; and

locating the metal member on the second conductive pad before locating the first conductive pad on the first substrate in the facing relationship with the second conductive pad on the second substrate.

13. The method according to claim 12 , wherein the first substrate is a resin substrate.

14. The method of claim 10 , further comprising:

providing a second insulating layer on the second substrate; and

providing an opening in the second insulating layer wherein the second conductive pad is exposed therein.

15. The method of claim 14 , wherein at least one of the first conductive pad or the second conductive pad are recessed within the first or second insulating layer by at least 0.5 μm and no more than 50 μm.

16. A method of electrically connecting a first substrate and a second substrate, wherein the first substrate has a first conductive pad thereon, the first conductive pad comprising a generally planar surface having a center, and the second substrate has a second conductive pad thereon, the second conductive pad comprising a generally planar surface having a center, said method comprising:

providing a metal member having a lower melting temperature than the material of the first and second conductive pads;

locating the first conductive pad on the first substrate in a facing relationship with the second conductive pad on the second substrate, wherein the center of the first conductive pad is offset from the center of the second conductive pad in a direction of the planar surface of one of the first conductive pad or the second conductive pad by a first distance;

melting the metal member;

moving the first and second substrates relative to each other to bring the metal member in the melted state into contact with the first and second conductive pads; and

moving the first and second substrates relative to each other, based on detection of a relative position of the first substrate and the second substrate, in the direction of the planar surface of one of the first conductive pad and the second conductive pad to form a single metal member in a solid state, wherein

when the metal member returns to the solid state, the distance between the center of the first conductive pad and the center of the second conductive pad is a second distance, and the second distance is less that the first distance, and wherein the melted metal member includes a void before moving the first and second substrates relative to each other in the direction of the planar surface of one of the first conductive pad or the second conductive pad, and a volume of the void is reduced by moving the first and second substrates relative to each other in the direction of the planar surface of one of the first conductive pad or the second conductive pad.

17. The method of claim 16 , further comprising:

providing a first insulating layer on the first substrate; and

providing an opening in the first insulating layer wherein the first conductive pad is exposed therein.

18. The method of claim 17 , wherein the first conductive pad is recessed in the opening in the first insulating layer.

19. The method of claim 18 , further comprising:

providing a flux on the first conductive pad; and

locating the metal member on the second conductive pad before locating the first conductive pad on the first substrate in the facing relationship with the second conductive pad on the second substrate.

20. The method of claim 17 , further comprising:

providing a second insulating layer on the second substrate; and

providing an opening in the second insulating layer, wherein the second conductive pad is exposed therein, wherein at least one of the first conductive pad and the second conductive pad are recessed within the first or second insulating layer by at least 0.5 μm no more than 50 μm.