Photodetector with nanowire photocathode
A photodetector assembly for ultraviolet and far-ultraviolet detection includes an anode, a microchannel plate with an array of multichannel walls, and a photocathode layer disposed on the microchannel plate. Additionally, the photocathode may include nanowires deposited on a top surface of the array of multichannel walls.
1. A photodetector assembly comprising:
an anode;
a microchannel plate comprising an array of multichannel walls, such that the multichannel walls comprise a silicon substrate; and
a photocathode layer disposed on the microchannel plate,
wherein the photocathode layer comprises nanowires deposited on a top surface of the array of multichannel walls.
2. The photodetector assembly of claim 1 , wherein the nanowires have a diameter with a range of 30-100 nanometers.
3. The photodetector assembly of claim 1 , wherein the multichannel walls comprise a thin film of Al x Ga 1-x N at a lower portion of the multichannel wall,
wherein the thin film of Al x Ga 1-x N provides as a secondary electron emission layer.
4. The photodetector assembly of claim 1 , wherein the nanowires comprise material made of GaN.
5. The photodetector assembly of claim 4 , wherein the nanowires comprising GaN is doped with magnesium.
6. The photodetector assembly of claim 1 , wherein the nanowires are grown perpendicular to a base of the top surface of the multichannel walls.
7. The photodetector assembly of claim 6 , wherein the nanowires are grown in a conical shape.
8. The photodetector assembly of claim 1 , wherein the nanowires have a length of 100-500 nanometers.
9. The photodetector assembly of claim 8 , wherein the silicon substrate is coated with titanium to form an electroconductive layer for growing the nanowires.
10. The photodetector assembly of claim 1 , wherein the multichannel wall is positioned at an inclined angle with respect to a base of the microchannel plate.
11. The photodetector assembly of claim 10 , wherein the inclined angle ranges from 5 to 25 degrees.
12. The photodetector assembly of claim 1 , wherein the nanowires comprise material made of Al x Ga 1-x N with a stoichiometric value of x.
13. The photodetector assembly of claim 12 , wherein the stoichiometric value of x is any numerical value between 0 and 1.
14. The photodetector assembly of claim 12 , wherein the nanowires comprising Al x Ga 1-x N is doped with magnesium.
15. A method of producing a photocathode comprising:
forming an electroconductive layer comprising a titanium layer on a silicon substrate;
creating an intermediate layer comprising an aluminum nitride layer on top of the electroconductive layer; and
growing a nanowire on a surface of the intermediate layer.
16. The method of producing the photocathode of claim 15 , further comprising positioning the silicon substrate perpendicular to a direction of gas flow to allow the nanowire to grow perpendicular to a base of the photocathode.
17. The method of producing a photocathode of claim 15 , further comprising growing the nanowire on a top surface of a microchannel plate.
18. The method of producing the photocathode of claim 15 , wherein the nanowire comprises material made of Al x Ga 1-x N with a stoichiometric x value between 0 and 1.
19. The method of producing a photocathode of claim 18 , further comprising doping the nanowire with magnesium.
20. A photodetector assembly comprising:
an anode;
a microchannel plate comprising an array of multichannel walls, such that the multichannel walls comprise a silicon substrate; and
a photocathode layer disposed on the microchannel plate,
wherein the photocathode layer comprises nanowires deposited on a top surface of the array of multichannel walls and the silicon substrate is coated with titanium to form an electroconductive layer for growing the nanowires.
21. The photodetector assembly of claim 20 , wherein the nanowires comprise material made of GaN doped with magnesium.
22. The photodetector assembly of claim 20 , wherein the stoichiometric value of x is any numerical value between 0 and 1.
23. The photodetector assembly of claim 22 , wherein the nanowires comprising Al x Ga 1-x N is doped with magnesium.
24. A photodetector assembly comprising:
an anode;
a microchannel plate comprising an array of multichannel walls; and
a photocathode layer disposed on the microchannel plate,
wherein the photocathode layer comprises nanowires deposited on a top surface of the array of multichannel walls and the multichannel walls comprise a thin film of Al x Ga 1-x N at a lower portion of the multichannel wall such that the thin film of Al x Ga 1-x N provides as a secondary electron emission layer.
25. The photodetector assembly of claim 24 , wherein the stoichiometric value of x is any numerical value between 0 and 1.