Reflection mask and pattern formation method

1. A pattern formation method comprising:

applying a resist onto a processing object;

performing light exposure to the resist by use of a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays;

performing development using a first developing solution to areas exposed to light with a light exposure energy larger than a first light exposure energy; and

performing development using a second developing solution to areas exposed to light with a light exposure energy smaller than a second light exposure energy,

wherein the reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are non-periodically arranged, and

the non-periodic pattern arrangement region and the periodic pattern arrangement region differ from one another in reflectivity for the EUV light or the soft X-rays.

2. The pattern formation method according to claim 1 , wherein the reflectivity of the non-periodic pattern arrangement region of the reflection mask is lower than the reflectivity of the periodic pattern arrangement region.

3. The pattern formation method according to claim 1 , wherein

the reflection mask further includes an absorber absorbing the EUV light or the soft X-rays, which is disposed on the multilayer reflection film and constitutes the first patterns and the second patterns, and

a thickness of the absorber constituting the second patterns is smaller than a thickness of the absorber constituting the first patterns.

4. The pattern formation method according to claim 3 , wherein the second patterns of the reflection mask are constituted by the absorber disposed at positions corresponding to positions leaving resist patterns on the processing object.

5. The pattern formation method according to claim 4 , wherein the second patterns of the reflection mask are constituted by the absorber having a first thickness, the first thickness being a thickness providing a reflectivity with which a light exposure energy at positions of the resist corresponding to arrangement positions of the second patterns becomes larger than the second light exposure energy and smaller than the first light exposure energy.

6. The pattern formation method according to claim 3 , wherein

the multilayer reflection film is an Mo multilayer film, which includes an Mo film and an Si film alternately stacked in a plurality of layers, and

the absorber is a Ta film.

7. The pattern formation method according to claim 1 , wherein

the first patterns and the second patterns are constituted by the multilayer reflection film, and

the second patterns have a thickness smaller than a thickness of the first patterns.

8. The pattern formation method according to claim 7 , wherein, in the non-periodic pattern arrangement region of the reflection mask, the multilayer reflection film remains at areas corresponding to positions leaving resist patterns on the processing object.

9. The pattern formation method according to claim 8 , wherein the second patterns of the reflection mask are constituted by the multilayer reflection film having a first thickness, the first thickness being a thickness providing a reflectivity with which a light exposure energy at positions of the resist corresponding to arrangement positions of the second patterns becomes larger than the second light exposure energy and smaller than the first light exposure energy.

10. The pattern formation method according to claim 7 , wherein the multilayer reflection film is an Mo/Si multilayer film, which includes an Mo film and an Si film alternately stacked in a plurality of layers.

11. The pattern formation method according to claim 1 , wherein

the resist has sensitivity in wavelengths of EUV light or soft X-rays, and

the first developing solution is an aqueous solution of tetramethylammonium hydroxide, and

the second developing solution is an aqueous solution of butyl acetate or a mixture solution of anisole and methylisobutyl ketone.