Solar cell and method for manufacturing the same

1. A method for manufacturing a solar cell, the method comprising:

preparing a semiconductor substrate;

ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate;

ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate including the amorphous layer to form a first dopant layer;

activating the first conductive type dopant and crystallizing the amorphous layer by heating the semiconductor substrate; and

forming a first electrode electrically connected to the first dopant layer,

wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

2. The method according to claim 1 , wherein the first dopant layer includes a first portion disposed adjacent to the first electrode and a second portion that is other than the first portion of the first dopant layer, and

wherein, in the ion-implanting of the pre-amorphization element, the pre-amorphization element is ion-implanted in to an area of the second portion, or the pre-amorphization element is ion-implanted so that a dose of the pre-amorphization element ion-implanted in to the area of the second portion is higher than a dose of the pre-amorphization element ion-implanted in to an area of the first portion of the first dopant layer.

3. The method according to claim 2 , wherein the first portion includes the first conductive type dopant, and

wherein the second portion includes the first conductive type dopant and the pre-amorphization element.

4. The method according to claim 2 , wherein the first portion is thicker than the second portion.

5. The method according to claim 2 , wherein, a dose of the pre-amorphization element in the area of the second portion is about 3 to 20 times a dose of the first conductive type dopant in the area of the second portion.

6. The method according to claim 1 , wherein the first dopant layer comprises the first conductive type dopant, and

wherein the pre-amorphization element has an atomic number that is larger than an atomic number of the first conductive type dopant.

7. The method according to claim 6 , wherein, in the ion-implanting of the pre-amorphization element, a dose of the pre-amorphization element is in a range of about 1×10 14 to 9×10 16 atoms/cm 2 , and

wherein, in the ion-implanting of the first conductive type dopant, a dose of the first conductive type dopant is in a range of about 1×10 14 to 9×10 15 atoms/cm 2 .

8. The method according to claim 1 , wherein the pre-amorphization element includes at least one material selected from a group consisting of argon, silicon, germanium, and fluorine.

9. The method according to claim 1 , wherein the one portion of the first dopant layer including the pre-amorphization element is apart from the first electrode in a plan view.

10. The method according to claim 1 , further comprising:

forming a second dopant layer at another surface of the semiconductor substrate, the second dopant layer including a second conductive type dopant; and

forming a second electrode electrically connected to the second dopant layer.

11. The method according to claim 1 , wherein a doping concentration of the one portion of the first dopant layer is higher than a doping concentration of the another portion of the first dopant layer.

12. The method according to claim 11 , wherein the concentration of the pre-amorphization element in the one portion of the first dopant layer is higher than the concentration of the pre-amorphization element in the another portion of the first dopant layer.