Integrated cantilever switch
An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm 2 .
1. A method, comprising:
forming a layered stack on a silicon substrate, the layered stack including at least a first and a second semiconducting material in an alternating arrangement;
forming a transistor gate structure overlying the layered stack;
forming raised source and drain regions on sides of the transistor gate structure;
forming a cavity by forming openings in the raised source and drain regions, the forming of the openings exposing a top surface of the layered stack;
forming a movable member of the second semiconducting material in the cavity by selectively removing portions of the first semiconductor material from the layered stack; and
sealing the openings to the cavity.
2. The method of claim 1 wherein forming the raised source and drain regions includes forming the raised source and drain regions to be faceted.
3. The method of claim 1 wherein forming the moveable member includes forming the moveable member to be a cantilever arm.
4. The method of claim 1 wherein sealing the openings includes forming a spin-on glass material in the openings.
5. The method of claim 1 wherein forming the gate structure includes a metal gate, a high-k gate dielectric, and insulating sidewall spacers.
6. The method of claim 1 wherein forming the layered stack on the silicon substrate includes forming the first and second semiconducting materials from one or more of silicon and silicon germanium.
7. The method of claim 1 wherein forming the transistor gate structure includes forming a dielectric layer on the top surface of the layer stack, forming a conductive layer on the dielectric layer, and forming sidewalls on adjacent to the conductive layer.
8. The method of claim 1 , further comprising forming a metal tip on the moveable member.
9. The method of claim 1 wherein forming the movable member of the second semiconducting material includes exposing the first semiconductor material from the layered stack to hydrochloric acid.
10. A method, comprising:
forming a layered stack overlying a silicon substrate, the layered stack including a first, a second, and a third layer of semiconductor material;
forming a flexible member that extends from the second layer of the layered stack into a cavity by removing portions of the first and third layer of semiconductor material;
forming a gate overlying the flexible member and the cavity; and
forming raised source and drain regions adjacent to sides of the gate, the raised source and drain regions being on the third layer of the layered stack.
11. The method of claim 10 , further comprising forming the cavity by:
forming a first opening in the first semiconductor material;
forming a second opening in the second semiconductor material;
forming a third opening in the third semiconductor material; and
filling the first opening, the second opening, and the third opening with a sacrificial material; and
forming the gate on the sacrificial material; and
removing the sacrificial material.
12. The method of claim 10 wherein forming raised source and drain regions includes forming the raised source and drain regions to be spaced from the gate by a distance.
13. The method of claim 10 , further comprising forming openings between the gate and raised source and drain regions, forming the cavity by removing sacrificial material through the openings, and sealing the openings.
14. The method of claim 10 , further comprising:
forming openings in the raised source and drain regions by selectively removing portions of the raised source and drain regions;
selectively removing portions of the first, second, and third semiconductor materials from the layered stack; and
filling the openings of the raised source and drain regions by forming an insulating material in the openings.
15. A method, comprising:
forming a first layer on a substrate;
forming a second layer on the first layer;
forming a third layer on the second layer;
forming a cavity in the first, second, and third layers;
forming a moveable member having an end extending from the second layer into the cavity;
forming a transistor gate structure overlying the cavity and the moveable member;
forming raised source and drain regions on the layered stack;
separating the raised source and drain regions from the gate structure by a first distance; and
forming an insulating material between the raised source and drain regions and the gate.
16. The method of claim 15 wherein forming the moveable member includes:
forming the moveable member to be a cantilever arm; and
forming a metal tip on the end of the cantilever arm.
17. The method of claim 14 wherein forming the cavity includes forming a sacrificial material within the first layer, the second layer, and the third layer, and removing the sacrificial material before forming the gate structure.
18. The method of claim 14 wherein forming the transistor gate structure includes forming a metal gate on a high-k-gate dielectric and forming insulating sidewall spacers.