IP Library Granted Patent US 10,230,042
Granted Patent B2
US 10,230,042 · App. 15/261,703 · Granted Mar 12, 2019

Magnetoresistive element and method of manufacturing the same

Inventors: Masatoshi Yoshikawa (Seoul, KR); Hisanori Aikawa (Seoul, KR); Kazuhiro Tomioka (Seoul, KR); Shuichi Tsubata (Seoul, KR); Masaru Toko (Seoul, KR); Katsuya Nishiyama (Yokohama Kanagawa, JP); Yutaka Hashimoto (Seoul, KR); Tatsuya Kishi (Seongnam-si, KR)
Assignee: TOSHIBA MEMORY CORPORATION
H01L43/08H01L43/12H01L27/228
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Quick Facts
Patent No.
US 10,230,042
App. No.
15/261,703
Granted
Mar 12, 2019
Kind
B2
Abstract

A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Claims (23)

1. A magnetoresistive effect element comprising:

a first magnetic layer;

a nonmagnetic layer above the first magnetic layer;

a second magnetic layer above the nonmagnetic layer;

a metal layer above the second magnetic layer, the metal layer comprising at least one of ruthenium, rhodium, osmium, and platinum; and

a third magnetic layer above the metal layer, the third magnetic layer being antiferromagnetically coupled with the second magnetic layer, an area of a bottom of the third magnetic layer being larger than an area of a top of the third magnetic layer, an angle between the top of the third magnetic layer and a side of the third magnetic layer being larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, and an angle between the bottom of the third magnetic layer and the side of the third magnetic layer being smaller than an angle between the bottom of the second magnetic layer and the side of the second magnetic layer, wherein:

the side of the second magnetic layer has substantially the same angle to a first axis from the top of the second magnetic layer to the bottom of the second magnetic layer, the side of the third magnetic layer has substantially the same angle to the first axis from the top of the third magnetic layer to the bottom of the third magnetic layer, and the angle of the side of the third magnetic layer is larger than the angle of the side of the second magnetic layer.

2. The element according to claim 1 , wherein:

the second magnetic layer has a larger coercivity than a coercivity of the first magnetic layer.

3. The element according to claim 2 , wherein:

the third magnetic layer has a larger coercivity than the coercivity of the second magnetic layer.

4. A magnetoresistive effect element comprising:

a first magnetic layer;

a nonmagnetic layer above the first magnetic layer;

a second magnetic layer above the nonmagnetic layer, the second magnetic layer having a larger coercivity than a coercivity of the first magnetic layer;

a metal layer above the second magnetic layer; and

a third magnetic layer above the metal layer, an area of a bottom of the third magnetic layer being larger than an area of a top of the third magnetic layer, and an angle between the top of the third magnetic layer and a side of the third magnetic layer being larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer or an angle between the bottom of the third magnetic layer and the side of the third magnetic layer being smaller than an angle between the bottom of the second magnetic layer and the side of the second magnetic layer.

5. The element according to claim 4 , wherein:

the third magnetic layer has a larger coercivity than the coercivity of the second magnetic layer.

6. The element according to claim 4 , wherein:

the side of the second magnetic layer has substantially the same angle to a first axis from the top of the second magnetic layer to the bottom of the second magnetic layer,

the side of the third magnetic layer has substantially the same angle to the first axis from the top of the third magnetic layer to the bottom of the third magnetic layer, and

the angle of the side of the third magnetic layer is larger than the angle of the side of the second magnetic layer.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043194/0382 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: YOSHIKAWA, MASATOSHI; AIKAWA, HISANORI; TOMIOKA, KAZUHIRO; TSUBATA, SHUICHI; TOKO, MASARU; NISHIYAMA, KATSUYA; HASHIMOTO, YUTAKA; KISHI, TATSUYA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 040057/0874 →
Continuity (2)
Provisional Application 62303331 · Mar 3, 2016
Related Publication 20170256705A1 · Sep 7, 2017