Magnetic memory device
According to one embodiment, the magnetic memory device includes a first magnetoresistive element and a second magnetoresistive element which are adjacent to each other. Each of the first and second magnetoresistive elements includes a first magnetic layer, a first non-magnetic later on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer. Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.
1. A magnetic memory device comprising:
a first magnetoresistive element and a second magnetoresistive element each including a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer, the first and second magnetoresistive elements being adjacent to each other; and
a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements, wherein
the third magnetic layers in the first and second magnetoresistive elements are provided between the first magnetic layers and the fourth magnetic layer, and
a thickness of the third magnetic layer is thicker than a thickness of the first magnetic layer.
2. The device of claim 1 , wherein
the first magnetic layer having a lower coersive force than the second magnetic layer,
the third magnetic layer having a higher coersive force than the second magnetic layer.
3. The device of claim 1 , wherein
the first to third magnetic layers have a magnetization direction parallel to a stacking direction of the first to third magnetic layers,
the second magnetic layer and the third magnetic layer have respective antiparallel magnetization directions, and
a magnetization direction in the third magnetic layer in the first magnetoresistive element is antiparallel to a magnetization direction in the third magnetic layer in the second magnetoresistive element.
4. The device of claim 3 , further comprising:
a first wire electrically connected to the fourth magnetic layer;
a first transistor, one end of the first transistor electrically connected to the first magnetic layer in the first magnetoresistive element; and
a second wire electrically connected to a gate of the first transistor, wherein
the second wire crosses the first wire.
5. The device of claim 4 , further comprising:
the first magnetoresistive element and the second magnetoresistive element each including the first magnetic layer, the first non-magnetic layer on the first magnetic layer, the second magnetic layer on the first non-magnetic layer, the second non-magnetic layer on the second magnetic layer, and the third magnetic layer on the second non-magnetic layer, the third and fourth magnetoresistive elements being adjacent to each other; and
a fifth magnetic layer being in contact with the third and fourth magnetoresistive elements, or in contact with conductive layers on the third and fourth magnetoresistive elements, wherein
the first and third magnetoresistive elements are adjacent to each other,
the third magnetic layers in the third and fourth magnetoresistive elements are provided between the first magnetic layers and the fourth magnetic layer, and
a longitudinal direction of the fourth magnetic layer is substantially parallel to a longitudinal direction of the fifth magnetic layer, and crosses the second wire.
6. The device of claim 5 , further comprising
a second transistor, one end of the second transistor electrically connected to the first magnetic layer in the third magnetoresistive element, other end of the second transistor electrically connected to other end of the first transistor, wherein
the fifth magnetic layer is electrically connected to the first wire.
7. The device of claim 6 , wherein the second wire is orthogonal to the first wire.
8. The device of claim 5 , further comprising:
a second transistor, one end of the second transistor electrically connected to the first magnetic layer in the third magnetoresistive element, a gate of the second transistor electrically connected to the second wire; and
a third wire electrically connected to the fifth magnetic layer, the third wire being different from the first wire.
9. The device of claim 4 , further comprising
a third wire electrically connected to other end of the first transistor, wherein
the third wire is substantially parallel to the first wire.
10. A magnetic memory device comprising:
a first magnetoresistive element, a second magnetoresistive element, and a third magnetoresistive element each including a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer; and
a fourth magnetic layer between the first magnetoresistive element and the second magnetoresistive element, wherein
a thickness of the third magnetic layer is thicker than a thickness of the first magnetic layer,
the first magnetoresistive element and the second magnetoresistive element are adjacent to each other with the fourth magnetic layer interposed between the first and second magnetoresistive elements, and
the first magnetoresistive element and the third magnetoresistive element are adjacent to each other with no magnetic layer interposed between the first and third magnetoresistive element.
11. The device of claim 10 , wherein
the first to third magnetic layers have a magnetization parallel to a stacking direction of the first to third magnetic layers,
the second magnetic layer and the third magnetic layer have respective antiparallel magnetization directions, and
a magnetization direction in the third magnetic layer in the first magnetoresistive element is antiparallel to a magnetization direction in the third magnetic layers in the second and third magnetoresistive elements.
12. The device of claim 10 , wherein
the fourth magnetic layer is arranged between an upper portion of the first magnetoresistive element and an upper portion of the second magnetoresistive element.
13. The device of claim 10 , wherein
the second magnetic layer has a higher coersive force than the first magnetic layer, and the third magnetic layer has a higher coersive force than the second magnetic layer, and
the fourth magnetic layer is provided between the third magnetic layer in the first magnetoresistive element and the third magnetic layer in the second magnetoresistive element.
14. The device of claim 10 , wherein
the fourth magnetic layer is electrically conductive and is insulated from the first and second magnetoresistive elements.
15. The device of claim 10 , wherein the fourth magnetic layer is electrically non-conductive.
16. A magnetic memory device comprising
a first magnetoresistive element and a second magnetoresistive element each including a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer, the first and second magnetoresistive elements being adjacent to each other, wherein
the first to third magnetic layers have a magnetization direction parallel to a stacking direction of the first to third magnetic layers,
the second magnetic layer and the third magnetic layer have respective antiparallel magnetization directions, and
a magnetization direction in the third magnetic layer in the first magnetoresistive element is antiparallel to a magnetization direction in the third magnetic layer in the second magnetoresistive element.
17. The device of claim 16 , further comprising
a non-conductive fourth magnetic layer being in contact with the first and second magnetoresistive elements, or in contact with conductive layers on the first and second magnetoresistive elements, wherein
the third magnetic layers in the first and second magnetoresistive elements are provided between the first magnetic layers and the fourth magnetic layer.
18. The device of claim 17 , further comprising:
a third magnetoresistive element which is adjacent to the first magnetoresistive element;
a fourth magnetoresistive element which is adjacent to the third magnetoresistive element; and
a non-conductive fifth magnetic layer being in contact with the third and fourth magnetoresistive elements, or in contact with conductive layers on the third and fourth magnetoresistive elements, wherein
longitudinal directions in the fourth and fifth magnetic layers are substantially parallel to each other.
19. The device of claim 17 , further comprising:
a third magnetoresistive element which is adjacent to the first magnetoresistive element;
a fourth magnetoresistive element which is adjacent to the third magnetoresistive element; and
a non-conductive fifth magnetic layer being in contact with the third and fourth magnetoresistive elements, or in contact with conductive layers on the third and fourth magnetoresistive elements, wherein
longitudinal directions in the fourth and fifth magnetic layers cross each other.
20. The device of claim 17 , further comprising
a third magnetoresistive element which is adjacent to the first magnetoresistive element, wherein
the fourth magnetic layer is in contact with the third magnetoresistive element, or a conductive layer on the third magnetoresistive element.