Variable change memory and the writing method of the same
According to one embodiment, a variable change memory includes a bit line, a word line, a memory cell array, a resonance line, a clock generator, and a write driver. The bit line extends in a first direction. The word line extends in a second direction. The memory cell array includes blocks. The each block includes memory cells including a transistor and a variable resistive element. The resonance line connects to a bit line. The clock generator is arranged in the memory cell array and applies a voltage to the resonance line. The write driver supplies a write current to the bit line. The voltage oscillates at the predetermined period and the write current are supplied to the bit line.
1. A writing method of a memory having a memory cell including an MTJ element, comprising:
applying a voltage which oscillates at a predetermined period to the MTJ element; and
applying, to the MTJ element, a predetermined voltage higher than a peak voltage of the voltage which oscillates at the predetermined period after the voltage which oscillates at the predetermined period is applied to the MTJ element.
2. The writing method of the memory according to claim 1 , wherein:
one end of the MTJ element is connected to a bit line,
the other end of the MTJ element is connected to one end of a select transistor,
the other end of the select transistor is connected to a source line, and
the voltage which oscillates at the predetermined period and the predetermined voltage are applied from a side of the bit line to the MTJ element.
3. The writing method of the memory according to claim 1 , wherein the predetermined period is not less than 1 GHz.
4. The writing method of the memory according to claim 1 , wherein the predetermined period is not less than 10 GHz.
5. The writing method of the memory according to claim 1 , wherein an application time of the voltage which oscillates at the predetermined period is shorter than the application time of the predetermined voltage.
6. The writing method of the memory according to claim 5 , wherein the voltage that oscillates at the predetermined period is superimposed on the predetermined voltage at a start of application of the predetermined voltage.