Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality of diffusion layers. The gate electrode is on the gate insulating film. The first contacts include silicide layers of the same material which are on the gate electrode and the diffusion layers respectively, and first metal layers on the silicide layers. The second contacts are on the first contacts.
1. A semiconductor device comprising:
a semiconductor layer;
a plurality of diffusion layers in the semiconductor layer;
a gate insulating film on the semiconductor layer between the plurality of diffusion layers;
a gate electrode on the gate insulating film;
first contacts including silicide layers of the same material on the gate electrode and the diffusion layers respectively, and first metal layers on the silicide layers; and
second contacts on the first contacts, wherein
the silicide layers and the first metal layers are plate shape,
an area of a top surface of each first contact is larger than an area of a bottom surface of each second contact,
a contact portion between each first contact and each second contact is only the top surface of each first contact and the bottom surface of each second contact,
each first contact further includes a first barrier metal layer between the silicide layer and the first metal layer,
each second contact includes
a second barrier metal layer that includes the same material as that of the first barrier metal layer and is connected to the first metal layer, and
a second metal layer that includes the same material as that of the first metal layer and is connected to the first metal layer via the second barrier metal layer, and
the silicide layers include titanium (Ti),
the first metal layers and the second metal layers include tungsten (W), and
the first barrier metal layers and the second barrier metal layers include titanium nitride (TiN).