IP Library Granted Patent US 10,521,134
Granted Patent B2
US 10,521,134 · App. 15/263,017 · Granted Dec 31, 2019

Memory system

Inventors: Hiroki Noguchi (Kanagawa, JP); Shinobu Fujita (Tokyo, JP)
Assignee: Kabushiki Kaisha Toshiba
G06F3/0619G06F3/064G06F3/0685G06F11/1064
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Quick Facts
Patent No.
US 10,521,134
App. No.
15/263,017
Granted
Dec 31, 2019
Kind
B2
Abstract

A memory system has a first memory which comprises a nonvolatile memory data region, and a second memory which stores data before storing in a third memory, the data not being written back on the third memory in a lower-level with access priority lower than access priority of the first memory, among data inside the nonvolatile memory data region, wherein the second memory has a bit error rate lower than a bit error rate of the first memory.

Claims (44)

1. A memory system, comprising:

a first memory which comprises a nonvolatile memory data region;

a second memory which stores data before storing in a third memory, the data being stored in the nonvolatile memory data region and not yet being written back on the third memory, the third memory being accessed by a processor at access priority lower than access priority of the first memory, the second memory having a bit error rate lower than a bit error rate of the first memory,

error correction circuitry which corrects an error of data read with readout request in the nonvolatile memory data region; and

a controller which carries out a control of reading out, from the second memory, data having an error being uncorrectable by the error correction circuitry, among the data read with the readout request.

2. The memory system according to claim 1 , comprising:

hit determination circuitry which determines whether the data to be read with the readout request is stored in the nonvolatile memory data region; and

error correction determination circuitry which determines whether there is an error in the data determined by the hit determination circuitry as being stored and which determines whether the error is correctable by the error correction circuitry when the error is detected,

wherein, in a case where there is no error in the data determined by the hit determination circuitry as being stored, the controller carries out a control of reading out the data from the nonvolatile memory data region,

in a case where there is an error correctable by the error correction circuitry, in the data determined as being stored by the hit determination circuitry and readout from the nonvolatile memory data region, the controller reads out data corrected by the error correction circuitry, and

in a case where the data is determined by the hit determination circuitry as not being stored, the controller reads out the data to which the readout request has been issued, from the third memory.

3. The memory system according to claim 1 , wherein the controller carries out a control of writing data on the first memory without writing the data on the second memory when reading out the data from the third memory.

4. The memory system according to claim 1 , wherein the controller writes back the data stored in the second memory on the third memory when writing new data on the second memory or when turning off a power source of the second memory.

5. The memory system according to claim 1 , wherein memory capacity of the second memory is smaller than memory capacity of the first memory.

6. The memory system according to claim 1 , wherein the second memory includes a nonvolatile data region or a volatile data region which has access speed faster than access speed of the first memory.

7. The memory system according to claim 1 , comprising a fourth memory having access priority higher than access priority of the first memory,

wherein the first memory is accessed in a case where the data to which readout request has been issued is not stored in the fourth memory or in a case where the data is evicted from the fourth memory due to writing request.

8. The memory system according to claim 1 , wherein the first memory is a cache memory of the lowest-level, and the third memory is a main memory.

9. The memory system according to claim 1 , wherein the nonvolatile memory data region includes a magnetoresistive random access memory (MRAM).

10. A processor system, comprising:

a processor; and

a cache memory which is accessed by the processor,

wherein the cache memory comprises:

a first memory which comprises a nonvolatile memory data region;

a second memory which stores data before storing in a third memory, the data being stored in the nonvolatile memory data region and not yet being written back on the third memory, the third memory being accessed by a processor at access priority lower than access priority of the first memory,

the second memory has a bit error rate lower than a bit error rate of the first memory,

error correction circuitry which corrects an error of data read with readout request in the nonvolatile memory data region; and

a controller which carries out a control of reading out, from the second memory, data having an error being uncorrectable by the error correction circuitry, among the data read with the readout request.

11. The processor system according to claim 10 ,

wherein the cache memory comprises:

hit determination circuitry which determines whether the data to be read with the readout request is stored in the nonvolatile memory data region; and

error correction determination circuitry which determines whether there is an error in the data determined by the hit determination circuitry as being stored and which determines whether the error is correctable by the error correction circuitry when the error is detected,

wherein, in a case where there is no error in the data determined by the hit determination circuitry as being stored, the controller carries out a control of reading out the data from the nonvolatile memory data region,

in a case where there is an error correctable by the error correction circuitry, in the data determined as being stored by the hit determination circuitry and readout from the nonvolatile memory data region, the controller reads out data corrected by the error correction circuitry, and

in a case where the data is determined by the hit determination circuitry as not being stored, the controller reads out the data to which the readout request has been issued, from the third memory.

12. The processor system according to claim 10 , wherein the controller carries out a control of writing data on the first memory without writing the data on the second memory when reading out the data from the third memory.

13. The processor system according to claim 10 , wherein the controller writes back the data stored in the second memory on the third memory when writing new data on the second memory or when turning off a power source of the second memory.

14. The processor system according to claim 10 , wherein memory capacity of the second memory is smaller than memory capacity of the first memory.

15. The processor system according to claim 10 , wherein the second memory includes a nonvolatile data region or a volatile data region which has access speed faster than access speed of the first memory.

16. The processor system according to claim 10 ,

wherein the cache memory comprises a fourth memory having access priority higher than access priority of the first memory,

wherein the first memory is accessed in a case where the data to which readout request has been issued is not stored in the fourth memory or in a case where the data is evicted from the fourth memory due to writing request.

17. The processor system according to claim 10 , wherein the first memory is a cache memory of the lowest-level, and the third memory is a main memory.

18. The processor system according to claim 10 , wherein the nonvolatile memory data region includes a magnetoresistive random access memory (MRAM).

Assignments (5)
CHANGE OF NAME AND ADDRESS Recorded Jan 17, 2020
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 051628/0669 →
CHANGE OF NAME AND ADDRESS Recorded Jan 16, 2020
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 052001/0303 →
MERGER Recorded Jan 15, 2020
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 051524/0444 →
DEMERGER Recorded Jan 10, 2020
From: KABUSHIKI KAISHA TOSHBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051561/0839 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2016
From: NOGUCHI, HIROKI; FUJITA, SHINOBU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 040280/0099 →
Priority Claims (1)
JP 2015-183279 · Sep 16, 2015 · national
Continuity (1)
Related Publication 20170075601A1 · Mar 16, 2017