Quantum dot light-emitting device
A quantum dot light-emitting device includes: a first electrode; a second electrode opposite to the first electrode; an emission layer between the first electrode and the second electrode, the emission layer including quantum dots; and an inorganic layer between the emission layer and the second electrode, the inorganic layer including a metal halide.
1. A light-emitting device comprising:
a first electrode;
a second electrode opposite to the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer comprising quantum dots; and
an inorganic layer between the emission layer and the second electrode, the inorganic layer comprising a metal halide and a trivalent metal ion.
2. The light-emitting device of claim 1 , wherein the metal halide comprises an alkaline metal halide, an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, or any combination thereof.
3. The light-emitting device of claim 1 , wherein the metal halide comprises a transition metal halide.
4. The light-emitting device of claim 1 , wherein the metal halide comprises a silver (Ag) halide, a cadmium (Cd) halide, a mercury (Hg) halide, a manganese (Mn) halide, an iron (Fe) halide, a cobalt (Co) halide, a nickel (Ni) halide, a copper (Cu) halide, a zinc (Zn) halide, or any combination thereof.
5. The light-emitting device of claim 1 , wherein the metal halide comprises a silver (Ag) fluoride, a cadmium (Cd) fluoride, a mercury (Hg) fluoride, a manganese (Mn) fluoride, an iron (Fe) fluoride, a cobalt (Co) fluoride, a nickel (Ni) fluoride, a copper (Cu) fluoride, a zinc (Zn) fluoride, or any combination thereof.
6. The light-emitting device of claim 1 , wherein the metal halide comprises AgF, AgF 2 , CdF 2 , HgF 2 , MnF 2 , FeF 2 , CoF 2 , NiF 2 , CuF, CuF 2 , ZnF 2 , or any combination thereof.
7. The light-emitting device of claim 1 , wherein the metal halide comprises FeF 2 .
8. The light-emitting device of claim 1 , wherein the metal halide has an energy band gap of about 3.1 eV to about 4.6 eV.
9. The light-emitting device of claim 1 , wherein the metal halide has a melting point of about 700° C. to about 1400° C.
10. The light-emitting device of claim 1 , wherein the inorganic layer has a thickness of about 200 Å to about 1000 Å.
11. The light-emitting device of claim 1 , wherein the light-emitting device further comprises a substrate under the first electrode, the first electrode is an anode, the second electrode is a cathode, a hole transport region is between the first electrode and the emission layer, an electron transport region is between the second electrode and the emission layer, and the inorganic layer is in the electron transport region.
12. The light-emitting device of claim 1 , wherein the light-emitting device further comprises a substrate under the first electrode, the first electrode is a cathode, the second electrode is an anode, an electron transport region is between the first electrode and the emission layer, a hole transport region is between the second electrode and the emission layer, and the inorganic layer is in the electron transport region.
13. The light-emitting device of claim 1 , wherein the quantum dot has a core-shell structure comprising a core comprising a first semiconductor crystal and a shell comprising a second semiconductor crystal.
14. The light-emitting device of claim 13 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise a compound including a Group 12 element and a Group 16 element, a compound including a Group 13 element and a Group 15 element, a compound including a Group 13 element and a Group 16 element, or any combination thereof.
15. The light-emitting device of claim 13 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSTe, GaP, GaAs, GaSb, InP InAs, InSb, PbS, PbSe, PbTe, or any combination thereof.
16. The light-emitting device of claim 13 , wherein a first semiconductor of the first semiconductor crystal comprises CdSe, CdTe, ZnSe, InP, InAs, PbS, PbSe, PbTe, or any combination thereof, and a second semiconductor of the second semiconductor crystal comprises ZnSe, ZnS, CdS, HgS, GaAs, or any combination thereof.
17. The light-emitting device of claim 13 , wherein a second semiconductor of the second semiconductor crystal has an energy band gap equal to or greater than an energy bad gap of a first semiconductor of the first semiconductor crystal.
18. A light-emitting device comprising:
a first electrode;
a second electrode opposite to the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer comprising quantum dots; and
an inorganic layer between the emission layer and the second electrode, the inorganic layer comprising a metal halide,
wherein the inorganic layer further comprises at least one metal ion selected from Al 3+ , Ga 3+ , and In 3+ .
19. A light-emitting device comprising:
a first electrode;
a second electrode opposite to the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer comprising quantum dots; and
an inorganic layer between the emission layer and the second electrode, the inorganic layer comprising a metal halide,
wherein the metal halide is doped with the trivalent metal ion.