SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a semiconductor memory device includes a substrate having resistance-change elements, a first insulating film provided on the substrate, a nonconductive barrier film provided on the first insulating film, a second insulating film provided on the barrier film, and a first interconnect and a second interconnect provided at a predetermined pitch on the substrate, the first and second interconnects being put through the first insulating film, the nonconductive barrier film and the second insulating film. Each of the first and second interconnects comprises at least two wiring layers.
1 . A semiconductor memory device comprising:
a substrate including resistance-change elements;
a first insulating film provided on the substrate;
a nonconductive barrier film provided on the first insulating film;
a second insulating film provided on the nonconductive barrier film; and
a first interconnect and a second interconnect provided at a predetermined pitch on the substrate, the first and second interconnects being put through the first insulating film, the nonconductive barrier film and the second insulating film, and each of the first and second interconnects comprising at least two wiring layers.
2 . The device of claim 1 , wherein
the first interconnect comprises a first wiring layer and a second wiring layer,
the second interconnect comprises a first wiring layer and a second wiring layer,
the first wiring layer of the first interconnect is different in width from the first wiring layer of the second interconnect, and
the second wiring layer of the first interconnect is different in width from the second wiring layer of the second interconnect.
3 . The device of claim 2 , wherein
a width relationship between the second wiring layer of the first interconnect and the second wiring layer of the second interconnect is the opposite of a width relationship between the first wiring layer of the first interconnect and the first wiring layer of the second interconnect.
4 . The device of claim 1 , wherein
the first interconnect comprises a first wiring layer and a second wiring layer,
the second interconnect comprises a first wiring layer and a second wiring layer,
the second wiring layer of the first interconnect is higher in aspect ratio than the first wiring layer of the first interconnect, and
the second wiring layer of the second interconnect is higher in aspect ratio than the first wiring layer of the second interconnect.
5 . The device of claim 1 , wherein
the first interconnect comprises a first wiring layer and a second wiring layer,
the second interconnect comprises a first wiring layer and a second wiring layer,
the second wiring layers of the first interconnect and the second interconnect are alternately provided at each region along direction where the first and second interconnections are extended, and
the second wiring layers of the first interconnect and the second interconnect are wider than the first wiring layers of the first interconnect and the second interconnect.
6 . The device of claim 1 , further comprising
an interlayer insulating film provided on the substrate,
the first interconnect and the second interconnect are on the interlayer insulating film.
7 . The device of claim 6 , further comprising
first contacts and second contacts provided in the interlayer insulating film,
the first contacts connect the first interconnect and the resistance-change elements, and
the second contacts connect the second interconnect and portions on the substrate.
8 . The device of claim 2 , wherein
the first wiring layers of the first interconnect and the second interconnect are different in material from the second wiring layers of the first interconnect and the second interconnect.
9 . The device of claim 1 , wherein
each of the resistance-change elements includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a nonmagnetic layer between the first and second magnetic layers.
10 . A semiconductor memory device comprising:
a substrate including a memory cell region and a peripheral circuit region, and having portions on the substrate;
resistance-change elements matrically arranged in the memory cell region of the substrate, each having one end;
an interlayer insulating film provided on the memory cell region and the peripheral circuit region and covering the resistance-change elements;
bit line contacts provided in the interlayer insulating film in contact with the one ends of the resistance-change elements;
bit lines provided on the interlayer insulating film and connecting some of the bit line contacts;
source line contacts provided in the interlayer insulating film in contact with the portions on the substrate; and
source lines provided on the interlayer insulating film and connecting some of the source line contacts,
wherein,
the bit lines alternate with the source lines at regular intervals, and
the bit lines and the source lines each comprise at least first wiring layers and second wiring layers.
11 . The device of claim 10 , wherein
a width relationship between the second wiring layers of the bit lines and the second wiring layers of the source lines is the opposite of a width relationship between the first wiring layers of the bit lines and the first wiring layer of the source lines.
12 . The device of claim 10 , wherein
in any one of the bit lines and the source lines, the second wiring layer and any succeeding layers are higher than the first wiring layer in aspect ratio.
13 . The device of claim 10 , wherein
the second wiring layers of the bit lines and the second wiring layer of the source lines are alternately provided at each region along direction where the bit lines and source lines are extended, and
the second wiring layers of the bit lines and the second wiring layers of the source lines are wider than the first wiring layers of the bit lines and the first wiring layers of the source lines.
14 . The device of claim 10 , wherein
the first wiring layers of the bit lines and the first wiring layers of the source lines are different in material from the second wiring layers of the bit lines and the second wiring layers of the source lines.
15 . The device of claim 10 , further comprising
peripheral circuit interconnects provided on the interlayer insulating film within the peripheral circuit region,
the peripheral circuit interconnects comprising at least two wiring layers.
16 . The device of claim 10 , wherein
each of the resistance-change elements includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a nonmagnetic layer between the first and second magnetic layers.
17 . A semiconductor memory device manufacturing method comprising:
alternately forming first wiring layers of first interconnects and first wiring layers of second interconnects at a predetermined pitch on a substrate having resistance-change elements;
forming second wiring layers of the first interconnects on the respective first wiring layers of the first interconnects, and forming second wiring layers of the second interconnects on the respective first wiring layers of the second interconnects, after having determined a width of each of the second wiring layers of the first interconnects and the second wiring layers of the second interconnects on the basis of a width of each of the first wiring layers of the first interconnects and first wiring layers of the second interconnects.
18 . The device of claim 17 , wherein
a width relationship between the second wiring layers of the first interconnects and the second wiring layers of the second interconnects is made to be the opposite of a width relationship between the first wiring layers of the first interconnects and the first wiring layers of the second interconnects upon the first wiring layers of the first interconnects being different in width from the first wiring layers of the second interconnects.
19 . The device of claim 17 , wherein
the first interconnects and the second interconnects are formed by first forming first films having sides, second forming second films on the sides of the first films, third eliminating the first films, and fourth performing selective etching by using the second films as masks.
20 . The device of claim 1 , wherein
the first interconnect comprises a first wiring layer and a second wiring layer,
the second interconnect comprises a first wiring layer and a second wiring layer,
the first wiring layers of the first interconnect and the second interconnect are contact with the first insulating film, and the second wiring layers of the first interconnect and the second interconnect are contact with the second insulating film and the nonconductive barrier film.