SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD

1 . A semiconductor manufacturing apparatus comprising:

a reaction portion enabling a reactant gas processing a substrate to be introduced therein;

a discharge portion connected to the reaction portion;

a mounting portion located between the reaction portion and the discharge portion and enabling the substrate to be mounted thereon;

a first member located around the mounting portion and having a plurality of through holes causing the reaction portion and the discharge portion to be communicated with each other; and

a second member capable of changing respective opening areas of the through holes.

2 . The apparatus of claim 1 , comprising:

a moving device moving the second member in a direction to change the opening areas; and

a controller controlling a movement of the second member, wherein

the reactant gas includes a first reactant gas grinding a film on the substrate, and

the controller executes control to move the second member by a moving amount according to a tendency of a deposition amount of reactive products resulting from grinding of the film within a plane of the substrate.

3 . The apparatus of claim 2 , wherein the moving amount is a moving amount that causes opening areas of ones of the through holes located in a direction orthogonal to an extension direction of a line pattern obtained by grinding the film with respect to the substrate to be larger than opening areas of ones of the through holes located in the extension direction with respect to the substrate.

4 . The apparatus of claim 1 , wherein the second member can change the opening areas in a radial direction by moving in a radial direction of the substrate.

5 . The apparatus of claim 2 , wherein the second member can change the opening areas in a radial direction by moving in a radial direction of the substrate.

6 . The apparatus of claim 3 , wherein the second member can change the opening areas in a radial direction by moving in a radial direction of the substrate.

7 . The apparatus of claim 4 , wherein the second member reduces the opening areas by moving outward in the radial direction.

8 . The apparatus of claim 5 , wherein the second member reduces the opening areas by moving outward in the radial direction.

9 . The apparatus of claim 6 , wherein the second member reduces the opening areas by moving outward in the radial direction.

10 . The apparatus of claim 1 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the second member is placed on the second surface.

11 . The apparatus of claim 2 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the second member is placed on the second surface.

12 . The apparatus of claim 3 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the second member is placed on the second surface.

13 . The apparatus of claim 4 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the second member is placed on the second surface.

14 . The apparatus of claim 7 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the second member is placed on the second surface.

15 . The apparatus of claim 1 , wherein the through holes have a cross-section extending in the radial direction.

16 . The apparatus of claim 1 , wherein

the first member has a first surface on a side of the reaction portion, and a second surface opposite to the first surface on a side of the discharge portion, and

the first face is positioned below an upper surface of the substrate.

17 . The apparatus of claim 1 , wherein the second members as many as the through holes are placed to correspond to the through holes.

18 . The apparatus of claim 1 , wherein the through holes are located at equal intervals in a circumferential direction.

19 . A semiconductor manufacturing method comprising:

in a semiconductor manufacturing apparatus comprising a reaction portion enabling a reactant gas processing a substrate to be introduced therein, a discharge portion connected to the reaction portion, a mounting portion located between the reaction portion and the discharge portion and enabling the substrate to be mounted thereon, a first member located around the mounting portion and having a plurality of through holes causing the reaction portion and the discharge portion to be communicated with each other, and a second member capable of changing respective opening areas of the through holes, opening the through holes using the second member by individual opening areas for respective through holes; and

after the through holes are opened, introducing the gas into the reaction portion to process the substrate, and discharging reactive products resulting from processing of the substrate through the through holes opened by the second member.

20 . The method of claim 19 , wherein

the processing of the substrate comprises grinding of a film on the substrate, and

the opening of the through holes comprises moving the second member by a moving amount according to a tendency of a deposition amount of reactive products within a plane of the substrate.