Semiconductor manufacturing method and semiconductor device
A semiconductor manufacturing method includes alternately stacking first films and second films to form a stack film. The method includes forming a plurality of recessed portions in a stack direction of the stack film at an interval in a first direction substantially perpendicular to the stack direction. The semiconductor manufacturing method includes forming third films in the recessed portions. The method includes forming a mask material on the stack film and the third films and diminishing the mask material to expose the stack film in a first range between an end of a stepped portion to be formed on the stack film and one of the third films and to position an end of the mask material on the third film. The method includes removing a predetermined number of layers of films from the stack film in the first range using the diminished mask material as a mask.
1. A semiconductor manufacturing method comprising:
alternately stacking first films and second films to form a stack film;
forming a plurality of recessed portions in a stack direction of the stack film at an interval in a first direction substantially perpendicular to the stack direction;
forming third films in the recessed portions, respectively;
forming a mask material on the stack film and the third films and diminishing the mask material in the first direction to expose the stack film in a first range between an end of a stepped portion to be formed on the stack film and one of the third films and to position an end of the mask material on the third film; and
removing a predetermined number of layers of films from the stack film in the first range using the diminished mask material as a mask to form the stepped portion on the stack film.
2. The method of claim 1 , wherein
diminishing of the mask material is repeatedly performed while changing the third film on which the end of the mask material is positioned in a direction of enlarging the first range each time the films are removed, and
removing of the films is repeatedly performed using the diminished mask material as a mask each time the mask material is diminished.
3. The method of claim 2 , wherein diminishing of the mask material and removing of the films are performed a predetermined number of times fewer than steps in the stepped portion.
4. The method of claim 1 , wherein forming of the recessed portions is performed at an interval corresponding to widths in the first direction of the steps in the stepped portion, respectively.
5. The method of claim 1 , wherein numbers of the formed recessed portions and the formed third films are smaller than number of the steps in the stepped portion.
6. The method of claim 1 , wherein forming of the recessed portions is performed over partial ranges of the stack film in a second direction orthogonal to the first direction and the stack direction.
7. The method of claim 6 , wherein during forming of the recessed portions, the recessed portions are formed to be divided into pluralities of parts at an interval in the second direction, respectively.
8. The method of claim 1 , wherein
forming of the third films comprises:
forming a third film as one piece in the recessed portions and on the stack film; and
removing a part of the third film on the stack film.
9. The method of claim 1 , wherein diminishing of the mask material is performed until an exposed state of one of the third films is detected.
10. The method of claim 9 , wherein
diminishing of the mask material is performed by dry etching in a state where plasma is produced, and
the exposed state of one of the third films is detected based on a plasma emission state or a plasma potential.
11. The method of claim 1 , comprising removing the third films after forming the stepped portion.
12. The method of claim 11 , comprising forming a fourth film in the recessed portions and on the stack film after removing the third films.
13. The method of claim 1 , comprising forming storage portions extending in the stack direction at positions different from that of the stepped portion after forming the stepped portion.
14. The method of claim 13 , wherein
the first films are insulating films, and
the second films are silicon nitride films.
15. The method of claim 14 , comprising replacing the second films being the silicon nitride films with conductive films after forming the storage portions.
16. The method of claim 15 , comprising forming connection portions connecting the conductive films in steps of the stepped portion to upper wires on the steps, respectively, after replacing the second films with the conductive films.