Projectors of structured light
An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements, including first and second sets of the light-emitting elements arranged on the substrate in respective first and second two-dimensional patterns, which are interleaved on the substrate. First and second conductors are respectively connected to separately drive the first and second sets of the light-emitting elements so that the device selectably emits light in either or both of the first and second patterns.
1. An optoelectronic device, comprising:
a semiconductor substrate; and
a monolithic array of light-emitting elements, comprising first and second sets of the light-emitting elements arranged on the substrate in respective first and second two-dimensional patterns, which are interleaved on the substrate; and
first and second conductors, which are respectively connected to separately drive the first and second sets of the light-emitting elements so that the device selectably emits light in either or both of the first and second patterns.
2. The device according to claim 1 , wherein the first and second conductors are disposed in different, first and second metal layers formed over the semiconductor substrate.
3. The device according to claim 1 , wherein the first and second conductors are both disposed within a single metal layer formed over the semiconductor substrate.
4. The device according to claim 1 , wherein the light-emitting elements comprise vertical-cavity surface-emitting laser (VCSEL) diodes.
5. The device according to claim 1 , wherein at least one of the two-dimensional patterns is not a regular lattice.
6. The device according to claim 5 , wherein the at least one of the two-dimensional patterns is an uncorrelated pattern.
7. The device according to claim 1 , and comprising:
projection optics, which are configured to project the light emitted by the light emitting elements onto an object; and
an imaging device, which is configured to capture images of the object in a low-resolution mode while only the first set of the light-emitting elements is driven to emit the light, thereby projecting a low-resolution pattern onto the object, and in a high-resolution mode while both of the first and second sets of the light-emitting elements are driven to emit the light, thereby projecting a high-resolution pattern onto the object.
8. The device according to claim 1 , and comprising a projection lens, which is mounted on the semiconductor substrate and is configured to collect and focus light emitted by the light-emitting elements so as to project an optical beam containing a light pattern corresponding to the two-dimensional pattern of the light-emitting elements on the substrate.
9. The device according to claim 8 , and comprising a diffractive optical element (DOE), which is mounted on the substrate and is configured to expand the projected optical beam by producing multiple, mutually-adjacent replicas of the pattern.
10. The device according to claim 9 , wherein the projection lens and the DOE are formed on opposing sides of a single optical substrate.
11. The device according to claim 1 , and comprising a single diffractive optical element (DOE), which is mounted on the semiconductor substrate and is configured to collect and focus light emitted by the light-emitting elements so as to project an optical beam containing a light pattern corresponding to the two-dimensional pattern of the light-emitting elements on the substrate while expanding the projected optical beam by producing multiple, mutually-adjacent replicas of the pattern.
12. A method for producing an optoelectronic device, the method comprising:
providing a semiconductor substrate; and
forming on the substrate a monolithic array of light-emitting elements, comprising first and second sets of the light-emitting elements arranged on the substrate in respective first and second two-dimensional patterns, which are interleaved on the substrate; and
connecting first and second conductors to separately drive the first and second sets of the light-emitting elements respectively, so that the device selectably emits light in either or both of the first and second patterns.
13. The method according to claim 12 , wherein the first and second conductors are disposed in different, first and second metal layers formed over the semiconductor substrate.
14. The method according to claim 12 , wherein the first and second conductors are both disposed within a single metal layer formed over the semiconductor substrate.
15. The method according to claim 12 , wherein the light-emitting elements comprise vertical-cavity surface-emitting laser (VCSEL) diodes.
16. The method according to claim 12 , wherein at least one of the two-dimensional patterns is not a regular lattice.
17. The method according to claim 16 , wherein the at least one of the two-dimensional patterns is an uncorrelated pattern.
18. The method according to claim 12 , and comprising:
projecting the light emitted by the light emitting elements onto an object;
capturing first images of the object in a low-resolution mode while only the first set of the light-emitting elements is driven to emit the light, thereby projecting a low-resolution pattern onto the object; and
capturing second images in a high-resolution mode while both of the first and second sets of the light-emitting elements are driven to emit the light, thereby projecting a high-resolution pattern onto the object.
19. The method according to claim 18 , and comprising mounting a projection lens on the semiconductor substrate so as to collect and focus light emitted by the light-emitting elements, thereby projecting an optical beam containing a light pattern corresponding to the two-dimensional pattern of the light-emitting elements on the substrate.
20. The method according to claim 19 , and comprising mounting a diffractive optical element (DOE) on the substrate so as to expand the projected optical beam by producing multiple, mutually-adjacent replicas of the pattern.