Memory device

1. A memory device comprising:

a spin transfer torque magnetoresistive element including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer;

a temperature detecting unit which detects an ambient temperature of the magnetoresistive element; and

a write voltage generating unit which generates a write voltage for the magnetoresistive element in accordance with the temperature detected by the temperature detecting unit,

wherein the write voltage generated by the write voltage generating unit decreases as the temperature detected by the temperature detecting unit increases.

2. The memory device of claim 1 , further comprising a select transistor connected in series to the magnetoresistive element.

3. The memory device of claim 2 , wherein the write voltage generated by the write voltage generating unit is applied between both ends of a series circuit of the magnetoresistive element and the select transistor.

4. The memory device of claim 3 , further comprising first and second bit lines through which the write voltage generated by the write voltage generating unit is applied between the both ends of the series circuit.

5. The memory device of claim 2 , further comprising a gate voltage generating unit which generates a gate voltage used to select the select transistor in accordance with the temperature detected by the temperature detecting unit.

6. The memory device of claim 5 , wherein the gate voltage generating unit generates the gate voltage such that a current flowing through the select transistor decreases as the temperature detected by the temperature detecting unit increases.

7. The memory device of claim 5 , further comprising a word line through which the gate voltage generated by the gate voltage generating unit is applied to the select transistor.

8. The memory device of claim 1 , further comprising a read voltage generating unit which generates a read voltage for the magnetoresistive element in accordance with the temperature detected by the temperature detecting unit.

9. The memory device of claim 8 , wherein the read voltage generated by the read voltage generating unit decreases as the temperature detected by the temperature detecting unit increases.

10. The memory device of claim 1 , wherein the temperature detecting unit includes a resistive element having resistance which depends on temperature.

11. The memory device of claim 10 , wherein the resistive element is formed of a semiconductor material.

12. The memory device of claim 11 , wherein the semiconductor material is doped polysilicon.

13. The memory device of claim 1 , wherein the temperature detecting unit detects the ambient temperature of the magnetoresistive element before the write voltage generating unit generates the write voltage for the magnetoresistive element.

14. The memory device of claim 1 , wherein:

the write voltage generated by the write voltage generating unit is a voltage between a maximum allowable voltage and a minimum allowable voltage with respect to the temperature detected by the temperature detecting unit; and

the maximum allowable voltage is based on an allowable lifetime of the magnetoresistive element, and the minimum allowable voltage is based on an allowable write error rate (WER) of the magnetoresistive element.

15. The memory device of claim 1 , wherein the magnetoresistive element, the temperature detecting unit and the write voltage generating unit are provided on a same semiconductor substrate.

16. The memory device of claim 1 , wherein the magnetoresistive element is provided in a cell array area, and the temperature detecting unit is provided in a peripheral circuit area located outside the cell array area.

17. The memory device of claim 1 , wherein the magnetoresistive element is provided in a cell array area, and the write voltage generating unit is provided in a peripheral circuit area located outside the cell array area.

18. The memory device of claim 1 , wherein the first magnetic layer has a variable magnetization direction, and the second magnetic layer has a fixed magnetization direction.

19. The memory device of claim 1 , wherein the first magnetic layer has a magnetization direction perpendicular to a major surface thereof, and the second magnetic layer has a magnetization direction perpendicular to a major surface thereof.