IP Library Granted Patent US 10,032,499
Granted Patent B2
US 10,032,499 · App. 15/267,418 · Granted Jul 24, 2018

Magnetic memory device including two magnetic bodies

Inventors: Masaki Kado (Kanagawa, JP); Tsuyoshi Kondo (Kanagawa, JP); Hirofumi Morise (Kangawa, JP); Yasuaki Ootera (Kanagawa, JP); Takuya Shimada (Kanagawa, JP); Michael Arnaud Quinsat (Kanagawa, JP); Shiho Nakamura (Kanagawa, JP)
Assignee: Toshiba Memory Corporation
G11C11/1675G11C19/0841
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Quick Facts
Patent No.
US 10,032,499
App. No.
15/267,418
Granted
Jul 24, 2018
Kind
B2
Abstract

According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

Claims (64)

1. A magnetic memory device, comprising:

a first magnetic body extending in a first direction; and

a second magnetic body extending in the first direction,

a distance between the second magnetic body and the first magnetic body changing periodically along the first direction,

wherein the first magnetic body has a tubular configuration extending in the first direction to surround a periphery of the second magnetic body.

2. The device according to claim 1 , wherein the second magnetic body has a tubular configuration extending in the first direction.

3. The device according to claim 2 , wherein a diameter of the second magnetic body changes periodically along the first direction.

4. The device according to claim 1 , wherein

the first magnetic body includes an alloy including a first element and at least one of Co or Fe, and

the first element includes at least one of Ni, Pt, Ph, Pd, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, O, B, Ga, Ge, Si, Al, Mn, Mg, Zr, or Hf.

5. The device according to claim 1 , wherein

the first magnetic body includes:

a first film including at least one of Co or Fe; and

a second film stacked with the first film, the second film including a first element, and

the first element includes at least one of Ni, Pt, Ph, Pd, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, O, B, Ga, Ge, Si, Al, Mn, Mg, Zr, or Hf.

6. The device according to claim 1 , wherein at least a portion of a surface in a cross section of the first magnetic body perpendicular to the first direction has an arc configuration.

7. A magnetic memory device, comprising:

a first magnetic body extending in a first direction; and

a second magnetic body extending in the first direction,

a distance between the second magnetic body and the first magnetic body changing periodically along the first direction,

wherein

the first magnetic body has a first side surface crossing a second direction, the second direction being perpendicular to the first direction,

the second magnetic body has a second side surface crossing the second direction, and

a first fluctuation range along the first direction of a position of the first side surface in the second direction is smaller than a second fluctuation range along the first direction of a position of the second side surface in the second direction.

8. A magnetic memory device, comprising:

a first magnetic body extending in a first direction; and

a second magnetic body extending in the first direction,

a distance between the second magnetic body and the first magnetic body changing periodically along the first direction,

wherein

the second magnetic body includes a first region and a second region,

a position of the second region in the first direction is different from a position of the first region in the first direction,

a first distance along a second direction between the first region and the first magnetic body is shorter than a second distance along the second direction between the second region and the first magnetic body, the second direction being perpendicular to the first direction, and

the first distance is shorter than a period of the change of the distance between the second magnetic body and the first magnetic body.

9. The device according to claim 8 , wherein the first distance is not more than ⅕ times the period.

10. The device according to claim 8 , wherein the second distance is not less than twice the first distance.

11. A magnetic memory device, comprising:

a first magnetic body extending in a first direction;

a second magnetic body extending in the first direction,

a first electrode; and

a second electrode,

a distance between the second magnetic body and the first magnetic body changing periodically along the first direction,

the first magnetic body being conductive,

the first magnetic body having a first end and a second end, the second end being arranged with the first end in the first direction,

the first electrode being electrically connected to the first end,

the second electrode being electrically connected to the second end.

12. The device according to claim 11 , further comprising a controller electrically connected to the first electrode and the second electrode,

the controller supplying a current to the first magnetic body via the first electrode and the second electrode.

13. The device according to claim 11 , further comprising:

a third magnetic body continuous with the first magnetic body;

a fourth magnetic body; and

a first intermediate layer provided between the third magnetic body and the fourth magnetic body.

14. The device according to claim 13 , wherein

the third magnetic body includes a portion not overlapping the first magnetic body in the first direction, and

the fourth magnetic body does not overlap the first magnetic body in the first direction.

15. The device according to claim 13 , further comprising:

a fifth magnetic body continuous with the first magnetic body;

a sixth magnetic body; and

a second intermediate layer provided between the fifth magnetic body and the sixth magnetic body.

16. A magnetic memory device, comprising:

a first magnetic body extending in a first direction; and

a second magnetic body extending in the first direction,

a distance between the second magnetic body and the first magnetic body changing periodically along the first direction,

the first magnetic body has an easy magnetization axis along a direction crossing the first direction, and

the second magnetic body has an easy magnetization axis having a component along the first direction.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044830/0819 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2016
From: KADO, MASAKI; KONDO, TSUYOSHI; MORISE, HIROFUMI; OOTERA, YASUAKI; SHIMADA, TAKUYA; QUINSAT, MICHAEL ARNAUD; NAKAMURA, SHIHO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 040761/0137 →
Priority Claims (1)
JP 2016-023360 · Feb 10, 2016 · national
Continuity (1)
Related Publication 20170229640A1 · Aug 10, 2017
Cited By (2)
US 12,464,733 US 12,694,911