Correlated electron switch structures and applications
Subject matter disclosed herein may relate to devices formed from correlated electron material.
1. A method comprising:
etching at least a portion of a substrate to form a first cavity exposing at least a portion of a first metal layer; and
forming one or more layers of a correlated electron material (CEM) over the cavity to form a CEM structure at least partially filling the cavity, wherein at least one layer of the one or more layers of CEM forms two or more discontinuous switching regions and at least two of the one or more layers forms at least two conductive regions, wherein the two or more discontinuous switching regions comprise an intrinsic CEM and the two or more conductive regions comprise p-type doped CEM.
2. The method of claim 1 , and further comprising depositing one or more layers of an electrode material over the cavity prior to the forming of the one or more layers of the CEM over the cavity.
3. The method of claim 2 , wherein the electrode material comprises titanium nitride, platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, tungsten nitride, cobalt silicide, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver or iridium, or any combination thereof.
4. The method of claim 1 , wherein at least one layer of the one or more layers of the CEM forms a continuous switching region and at least two of the one or more layers forms at least two conductive regions.
5. The method of claim 1 , and further comprising forming a second metal layer over the CEM structure.
6. The method of claim 1 , and further comprising:
etching a second cavity in the CEM structure; and
forming a metal structure in the second cavity at least partially filling the second cavity.
7. The method of claim 1 , wherein forming the one or more layers of the CEM over the cavity to form a CEM structure at least partially filling the cavity further comprises depositing the one or more layers of the CEM over the cavity.
8. A method comprising:
etching at least a portion of a substrate to form a first cavity exposing at least a portion of a first metal layer; and
forming one or more layers of a correlated electron material (CEM) over the cavity to form a CEM structure at least partially filling the cavity, wherein at least one layer of the one or more layers of the CEM forms two or more discontinuous switching regions and at least two of the one or more layers forms at least two conductive regions, wherein the two or more discontinuous switching regions comprise p-type doped CEM and the two or more conductive regions comprise intrinsic CEM.
9. A device comprising:
a first metal layer;
a substrate formed on the first metal layer comprising a first cavity exposing at least a portion of the first metal layer; and
a correlated electron material (CEM) structure formed in the cavity, the CEM structure at least partially filling the cavity and comprising one or more layers of a CEM formed on at least the exposed portion of the first metal layer, wherein at least one layer of the one or more layers of the CEM forms two or more discontinuous switching regions and at least two of the one or more layers forms at least two conductive regions, wherein the two or more discontinuous switching regions comprise intrinsic CEM and the two or more conductive regions comprise p-type doped CEM.
10. The device of claim 9 , and further comprising a second metal layer formed on the CEM structure.
11. The device of claim 9 , and further comprising a metal structure formed in a second cavity formed in the CEM structure.