Method of manufacturing sputtering target and sputtering target
View Patent ↗The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
1. A method of manufacturing a sputtering target, comprising:
surface-treating at least one selected from the group consisting of a used sputtering target including a first face and a scrap material including a second face to expose at least one selected from the group consisting of the first and second faces and remove at least one selected from the group consisting of a part of the used sputtering target and a part of the scrap material by 1 mm or more in an inward direction from at least one selected from the group consisting of the first and second faces, the used sputtering target and the scrap material each containing a metal element, and the first and second faces each having uniform metallic color;
melting at least one selected from the group consisting of the used sputtering target and the scrap material after the surface treatment to form an ingot; and
manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining,
wherein at least one selected from the group consisting of the used sputtering target and the scrap material is surface-treated by at least one selected from the group consisting of a pickling removal and a mechanical removal, the pickling removal being performed using a mixture containing at least two acids selected from the group consisting of hydrofluoric acid, nitric acid, hydrochloric acid, and acetic acid.
2. The method according to claim 1 , wherein the pickling removal is performed using the mixture containing the hydrofluoric acid having a first mixture ratio and the nitric acid having a second mixture ratio higher than the first mixture ratio.
3. The method according to claim 1 , wherein at least one selected from the group consisting of the used sputtering target and the scrap material is melted using at least one melting method selected from the group consisting of electron-beam melting, plasma-arc melting, and cold crucible induction melting.
4. The method according to claim 3 , wherein at least one selected from the group consisting of the used sputtering target and the scrap material is melted using at least one melting method selected from the group consisting of the electron-beam melting and the cold crucible induction melting under a 1.0×10 −1 Pa degree of vacuum or less.
5. The method according to claim 1 , further comprising:
fabricating the used sputtering target by removing a backing plate from a used sputtering target having the backing plate, prior to the surface treatment.
6. The method according to claim 1 , further comprising:
working at least one selected from the group consisting of the used sputtering target and the scrap material into a small piece having a length and a width of 150 mm or less, prior to the surface treatment.
7. The method according to claim 1 , wherein the metal element is at least one selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Co, Ir, Ni, Pd, and Pt.
8. The method according to claim 1 , wherein a reduction of area of the ingot by the forging is 40% or more.