Process for producing a solar cell having an aromatic polyimide film substrate for high photoelectric conversion efficiency
A CIS solar cell having flexibility and high conversion efficiency may be produced, using, as a substrate, a polyimide film which is prepared from an aromatic tetracarboxylic acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component, and has a maximum dimensional change in the temperature-increasing step of from 25° C. to 500° C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25° C. before heat treatment.
1. A process for producing a CIS solar cell, comprising:
reacting an aromatic tetracarboxylic acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component in a solvent to provide a polyimide precursor solution;
flow-casting the obtained polyimide precursor solution on a support, and heating the solution to form a self-supporting film having a weight loss within a range of from 36% to 39%, this weight loss being calculated by the following formula (A):
Weight loss (%)=( W 1− W 2)/ W 1×100 (A)
wherein W 1 represents the weight of the self-supporting film, and W 2 represents the weight of the polyimide film after curing, wherein
the highest temperature (T 1 ) is equal to or lower than the temperature (T M ) at which the self-supporting film is thermally deformed;
heating the obtained self-supporting film to conduct the imidization reaction thereby producing a polyimide film, wherein
the self-supporting film is heated at a temperature lower than the heat deformation temperature (T M ), and then the temperature is increased and the film is heated at the highest heat treatment temperature (T 2 ) of from 495° C. to 540° C.;
forming a metal layer on the surface of the polyimide film;
forming a thin film containing a Group IB element, a Group IIIB element and a Group VIB element on or over the metal layer; and
forming a chalcopyrite semiconductor layer by subjecting the thin film to heat treatment at a temperature equal to or higher than 450° C.
2. The process for producing the CIS solar cell according to claim 1 , wherein the metal layer is to be used as an electrode layer, and is formed on the side (Side B) of the polyimide film which was in contact with the support when producing the self-supporting film to be converted into the polyimide film.
3. The process for producing the CIS solar cell according to claim 2 , wherein a protective layer is formed on the opposite side (Side A) of the polyimide film to Side B.
4. The process for producing the CIS solar cell according to claim 1 , wherein the highest temperature (T 1 ) in the casting step is equal to or lower than 140° C.
5. The process for producing the CIS solar cell according to claim 1 , wherein the temperature at the middle stage of the casting step is lower than the initial temperature at the starting point of the casting step.
6. The process for producing the CIS solar cell according to claim 1 , wherein the polyimide film has a maximum dimensional change in the temperature-increasing step of from 25° C. to 500° C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25° C. before heat treatment.
7. The process for producing the CIS solar cell according to claim 1 , wherein the polyimide film has a weight loss after heat treatment at 500° C. for 20 min within a range equal to or less than 1 wt %.
8. The process for producing the CIS solar cell according to claim 1 , wherein the polyimide film has a coefficient of thermal expansion from 25° C. to 500° C. within a range of from 10 ppm/° C. to 20 ppm/° C., excluding 10 ppm/° C.
9. The process for producing the CIS solar cell according to claim 1 , wherein the polyimide film has a thickness within a range of from 7.5 μm to 75 μm.
10. The process for producing the CIS solar cell according to claim 1 , wherein the metal layer comprises molybdenum.
11. The process for producing the CIS solar cell according to claim 1 , wherein the metal layer is formed by sputtering or vapor deposition.
12. A process for producing a CIS solar cell, comprising:
reacting an aromatic tetracarboxylic acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component in a solvent to provide a polyimide precursor solution;
flow-casting the obtained polyimide precursor solution on a support, and heating the solution to form a self-supporting film having a weight loss within a range of from 36% to 39%, this weight loss being calculated by the following formula (A):
Weight loss (%)=( W 1− W 2)/ W 1×100 (A)
wherein W 1 represents the weight of the self-supporting film, and W 2 represents the weight of the polyimide film after curing, wherein
the highest temperature (T 1 ) is equal to or lower than the temperature (T M ) at which the self-supporting film is thermally deformed;
heating the obtained self-supporting film to conduct the imidization reaction thereby producing a polyimide film, wherein
the self-supporting film is heated at a temperature lower than the heat deformation temperature (T M ), and then the temperature is increased and the film is heated at the highest heat treatment temperature (T 2 ) of from 495° C. to 540° C.;
forming a metal layer on the surface of the polyimide film;
forming a thin film containing a Group IB element and a Group IIIB element, and no Group VIB element on or over the metal layer; and
forming a chalcopyrite semiconductor layer by subjecting the thin film to heat treatment at a temperature equal to or higher than 450° C. in an atmosphere containing at least one Group VIB element.
13. The process for producing the CIS solar cell according to claim 12 , wherein the metal layer is to be used as an electrode layer, and is formed on the side (Side B) of the polyimide film which was in contact with the support when producing the self-supporting film to be converted into the polyimide film.
14. The process for producing the CIS solar cell according to claim 13 , wherein a protective layer is formed on the opposite side (Side A) of the polyimide film to Side B.
15. The process for producing the CIS solar cell according to claim 12 , wherein the highest temperature (T 1 ) in the casting step is equal to or lower than 140° C.
16. The process for producing the CIS solar cell according to claim 12 , wherein the temperature at the middle stage of the casting step is lower than the initial temperature at the starting point of the casting step.
17. The process for producing the CIS solar cell according to claim 12 , wherein the polyimide film has a maximum dimensional change in the temperature-increasing step of from 25° C. to 500° C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25° C. before heat treatment.
18. The process for producing the CIS solar cell according to claim 12 , wherein the polyimide film has a weight loss after heat treatment at 500° C. for 20 min within a range equal to or less than 1 wt %.
19. The process for producing the CIS solar cell according to claim 12 , wherein the polyimide film has a coefficient of thermal expansion from 25° C. to 500° C. within a range of from 10 ppm/° C. to 20 ppm/° C., excluding 10 ppm/° C.
20. The process for producing the CIS solar cell according to claim 12 , wherein the polyimide film has a thickness within a range of from 7.5 μm to 75 μm.
21. The process for producing the CIS solar cell according to claim 12 , wherein the metal layer comprises molybdenum.
22. The process for producing the CIS solar cell according to claim 12 , wherein the metal layer is formed by sputtering or vapor deposition.