Storage device having improved write uniformity stability

1. A non-transitory machine readable storage medium containing program code that when processed by a processor causes a method to be performed, the method comprising:

executing a wear leveling routine by servicing cold data from a first queue in a non-volatile storage device to write the cold data;

executing a garbage collection routine by servicing valid data from a second queue in the non-volatile storage device to write the valid data; and,

servicing host write data from a third queue in the non-volatile storage device to write the host write data wherein:

the first, second, and third queues are implemented in a common memory;

a total maximum servicing bandwidth of the first, second and third queues is X MB/s;

a first amount of servicing bandwidth y is assigned to the first queue;

a remaining amount of servicing bandwidth is assigned to the second and third queues such that a total maximum servicing bandwidth of the second and third queues is (X−y) MB/s; and

y is fixed to prevent expansion of a first size of the first queue at the expense of a second size of the third queue thereby allowing the third queue to receive requests from a host at a constant rate over time.

2. The non-transitory machine readable storage medium of claim 1 wherein the non-volatile storage device is a solid state disk (SSD) device.

3. The non-transitory machine readable storage medium of claim 1 wherein the method further comprises changing a size of the second and third queues as a function of a write amplification determination.

4. The non-transitory machine readable storage medium of claim 1 wherein the common memory is local to the non-volatile storage device.

5. The non-transitory machine readable storage medium of claim 4 wherein the common memory comprises dynamic random access memory (DRAM).

6. The non-transitory machine readable storage medium of claim 1 wherein the non-volatile storage device comprises FLASH non-volatile memory devices.

7. The non-transitory machine readable storage medium of claim 1 wherein the non-volatile storage device comprises three dimensional non-volatile memory devices.

8. An apparatus, comprising:

a non-volatile storage device comprising a) and b) below:

a) a plurality of non-volatile memory devices;

b) controller circuitry, the controller circuitry to perform the following:

execute a wear leveling routine by servicing cold data from a first queue in a non-volatile storage device to write the cold data;

execute a garbage collection routine by servicing valid data from a second queue in the non-volatile storage device to write the valid data; and,

service host write data from a third queue in the non-volatile storage device to write the host write data wherein:

the first, second, and third queues are implemented in a common memory;

a total maximum servicing bandwidth of the first, second and third queues is X MB/s;

a first amount of servicing bandwidth y is assigned to the first queue;

a remaining amount of servicing bandwidth is assigned to the second and third queues such that a total maximum servicing bandwidth of the second and third queues is (X−y) MB/s; and

y is fixed to prevent expansion of a first size of the first queue at the expense of a second size of the third queue thereby allowing the third queue to receive requests from a host at a constant rate over time.

9. The apparatus of claim 8 wherein the non-volatile storage device is a solid state disk (SSD) device.

10. The apparatus of claim 8 wherein the controller is to change a size of the second and third queues as a function of a write amplification determination.

11. The apparatus of claim 8 wherein the common memory is local to the non-volatile storage device.

12. The apparatus of claim 11 wherein the common memory comprises dynamic random access memory (DRAM).

13. The apparatus of claim 8 wherein the non-volatile storage device comprises FLASH non-volatile memory devices.

14. The apparatus of claim 8 wherein the non-volatile storage device comprises three dimensional non-volatile memory devices.

15. A computing system, comprising:

a plurality of processing cores;

a networking interface;

a non-volatile storage device comprising a) and b) below:

a) a plurality of non-volatile memory devices;

b) controller circuitry, the controller circuitry to perform the following:

execute a wear leveling routine by servicing cold data from a first queue in a non-volatile storage device to write the cold data;

execute a garbage collection routine by servicing valid data from a second queue in the non-volatile storage device to write the valid data; and,

service host write data from a third queue in the non-volatile storage device to write the host write data wherein:

the first, second, and third queues are implemented in a common memory;

a total maximum servicing bandwidth of the first, second and third queues is X MB/s;

a first amount of servicing bandwidth y is assigned to the first queue;

a remaining amount of servicing bandwidth is assigned to the second and third queues such that a total maximum servicing bandwidth of the second and third queues is (X−y) MB/s; and

y is fixed to prevent expansion of a first size of the first queue at the expense of a second size of the third queue thereby allowing the third queue to receive requests from a host at a constant rate over time.

16. The computing system of claim 15 wherein the non-volatile storage device is a solid state disk (SSD) device.

17. The computing system of claim 15 wherein the controller is 10 change a size of the second and third queues as a function of a write amplification determination.

18. The computing system of claim 15 wherein the common memory is local to the non-volatile storage device.

19. The computing system of claim 15 wherein the non-volatile storage device comprises FLASH non-volatile memory devices.

20. The computing system of claim 15 wherein the non-volatile storage device comprises three dimensional non-volatile memory devices.