Near-infrared cut filter and solid-state imaging device

1. A near-infrared cut filter comprising:

a stack comprising:

a near-infrared absorbing glass substrate; and

a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye and a transparent resin; and

a dielectric multilayer film provided on at least one main surface of the stack, wherein

the near-infrared absorbing glass substrate has a maximum absorption wavelength λ Gmax in a wavelength of from 775 to 900 nm in an absorption spectrum of a wavelength of from 400 to 1100 nm at an incident angle of 0 degree,

the near-infrared absorbing dye has a maximum absorption wavelength λ max at a wavelength of from 650 to 750 nm,

the dielectric multilayer film has a near-infrared reflective property,

transmittance λ(λ max ) in λ max of the near-infrared absorbing layer is lower than transmittance T(λ Gmax ) in λ Gmax of the near-infrared absorbing glass,

transmittance T(λ max ) of the near-infrared absorbing layer is 5% or less,

transmittance T(λ Gmax ) of the near-infrared absorbing glass substrate is 50% or less,

the dielectric multilayer film has a near-infrared reflecting band in which average transmittance of light with a wavelength of from 430 to 660 nm is 90% or more, and in which transmittance is 20% or less in a wavelength of from 700 to 1200 nm,

an average value of the near-infrared cut filter of transmittance of light with a wavelength of 450 to 550 nm is 80% or more, and

maximum transmittance of the near-infrared cut filter at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

2. The near-infrared cut filter according to claim 1 , wherein the near-infrared absorbing glass substrate has absorptance at an incident angle of 0 degree with respect to light with a wavelength of from 775 to 900 nm of 75% or more.

3. The near-infrared cut filter according to claim 1 , wherein the dielectric multilayer film comprises a dielectric multilayer film with a near-infrared reflective property, the film having maximum transmittance of 1% or less at an incident angle of 0 degree with respect to light with a wavelength of from 800 to 900 nm, and maximum transmittance of 3% or more at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm.

4. The near-infrared cut filter according to claim 3 , wherein the near-infrared absorbing layer is provided on one main surface of the near-infrared absorbing glass substrate, and the dielectric multilayer film with a near-infrared reflective property is provided on another main surface of the near-infrared absorbing glass substrate.

5. The near-infrared cut filter according to claim 1 , wherein

λ Sh ( D _ T 20%)≤λ Sh ( R 30_ Ts 50%)≤λ Sh ( R 0_ T 50%)≤λ Lo ( D _ T 20%)   Formula (1)

is satisfied,

provided that a wavelength with which transmittance of light at an incident angle of 0 degree becomes 50% on a short wavelength side of the near-infrared reflecting band of the dielectric multilayer film is λSh(R0_T50%), a wavelength with which transmittance of s polarization component becomes 50% in light at an incident angle of 30 degrees is λSh(R30_Ts50%), a wavelength with which transmittance becomes 20% on a short wavelength side of the λ max of the near-infrared absorbing layer is λSh(D_T20%), and a wavelength with which transmittance becomes 20% on a long wavelength side of the λ max is λLo(D_T20%).

6. The near-infrared cut filter according to claim 1 , wherein wavelength λ(T85%), wavelength λ(T45%), and wavelength λ(T5%) with which transmittance of light at an incident angle of 0 degree in a wavelength of from 550 to 720 nm becomes 85%, 45%, and 5%, respectively, satisfy

{λ(T45%)−λ(T85%)}≥{λ(T5%)−λ(T45%)}  Formula (2).

7. The near-infrared cut filter according to claim 1 , wherein on the at least one main surface of the near-infrared absorbing glass substrate, reflectance at an incident angle of 5 degree with respect to light with a wavelength of from 430 to 600 nm is 2% or less, which is measured excluding reflection on an interface and a surface opposite to the at least one main surface of the near-infrared absorbing glass substrate.

8. The near-infrared cut filter according to claim 1 , wherein the dielectric multilayer film is provided on the near-infrared absorbing layer, and has dielectric film in contact with the near-infrared absorbing layer, and a refractive index of the dielectric film is 1.4 or more and 1.7 or less.

9. The near-infrared cut filter according to claim 1 , having a wavelength λ 0 (NIR) with which transmittance at an incident angle of 0 degree becomes 50% and a wavelength λ 30 (NIR) with which transmittance at an incident angle of 30 degrees becomes 50% in a region of a wavelength longer than 600 nm, wherein an absolute value of a difference between the wavelengths |λ 0 (NIR)−λ 30 (NIR)| is 5 nm or less.

10. The near-infrared cut filter according to claim 1 , wherein an average of an absolute value of a difference between transmittance at an incident angle of 0 degree and transmittance at an incident angle of 30 degrees is 3% or less in light with a wavelength of from 600 to 750 nm.

11. The near-infrared cut filter according to claim 1 , wherein the near-infrared absorbing dye comprises at least one selected from the group consisting of a cyanine-based compound, a phthalocyanine-based compound, a naphthalocyanine-based compound, a dithiol metal complex-based compound, a diimonium-based compound, a polymethine-based compound, a phthalide compound, a naphthoquinone-based compound, an anthraquinone-based compound, an indophenol-based compound and a squarylium-based compound.

12. The near-infrared cut filter according to claim 1 , further comprising an ultraviolet absorbing layer comprising an ultraviolet absorber and a transparent resin, wherein an average value of transmittance of the near-infrared cut filter at an incident angle of 0 degree is 70% or more in a wavelength of from 430 to 450 nm, and an average value of transmittance of the near-infrared cut filter at an incident angle of 0 degree is 5% or less in a wavelength of from 350 to 390 nm.

13. A solid-state imaging device comprising the near-infrared cut filter according to claim 1 and an optical member comprising a solid-state image sensing device, wherein the near-infrared cut filter and the solid-state image sensing device are disposed in order from a side of object of shooting or a side through which light from a light source enters.

14. A near-infrared cut filter comprising:

a stack comprising:

a near-infrared absorbing glass substrate;

a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye and a transparent resin; and

a dielectric layer with a thickness of 5 nm or more provided between the near-infrared absorbing glass substrate and the near-infrared absorbing layer; and

a dielectric multilayer film provided on at least one main surface of the stack, wherein

the dielectric layer comprises an alkali barrier film comprising at least one material selected from SiO 2 , SiO x (where 0.8≤x<2) and Al 2 O 3 and

maximum transmittance of the near-infrared cut filter at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

15. A near-infrared cut filter comprising:

a stack comprising:

a near-infrared absorbing glass substrate;

a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye and a transparent resin; and

a dielectric layer with a thickness of 5 nm or more provided between the near-infrared absorbing glass substrate and the near-infrared absorbing layer; and

a dielectric multilayer film provided on at least one main surface of the stack, wherein

the dielectric layer has an adhesive film provided on the near-infrared absorbing glass substrate side and an alkali barrier film provided on the near-infrared absorbing layer side,

the adhesive film comprises Al 2 O 3 , and the alkali barrier film comprises SiO 2 or SiO x (where 0.8≤x<2), and

maximum transmittance of the near-infrared cut filter at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

16. A near-infrared cut filter comprising:

a stack comprising:

a near-infrared absorbing glass substrate; and

a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye, an ultraviolet absorber, and a transparent resin; and

a dielectric multilayer film provided on at least one main surface of the stack, wherein

an average value of transmittance of the near-infrared cut filter at an incident angle at 0 degree is 70% or more in a wavelength of from 430 to 450 nm,

an average value of transmittance of the near-infrared cut filter at an incident angle at 0 degree is 5% or less in a wavelength of from 350 to 390 nm, and

the ultraviolet absorber satisfies requirements (iv-1) and (iv-2):

(iv-1) the ultraviolet absorber has at least one maximum absorption wavelength in a region of a wavelength of 415 nm or less in a light absorption spectrum of a wavelength of from 350 to 800 nm measured after dissolved in dichloromethane, and a longest maximum absorption wavelength λ max (UV) having a longest wavelength among the at least one maximum absorption wavelength is in a wavelength of from 360 to 415 nm; and

(iv-2) when transmittance in the longest maximum absorption wavelength λ max (UV) is 10% in a spectral transmittance curve measured after dissolved in dichloromethane, a difference λ L90 −λ L50 between a wavelength λ L90 and a wavelength λ L50 is 13 nm or less, provided that λ L90 is a wavelength with which transmittance becomes 90% in a region of a wavelength longer than the longest maximum absorption wavelength λ max (UV) and λ L50 is a wavelength with which transmittance becomes 50% in a region of a wavelength longer than the longest maximum absorption wavelength λ max (UV).

17. The near-infrared cut filter according to claim 16 , wherein the ultraviolet absorber comprises at least one selected from the group consisting of oxazole-based dye, merocyanine-based dye, cyanine-based dye, naphthalimide-based dye, oxadiazole-based dye, oxazine-based dye, oxazolidine-based dye, naphthalic acid-based dye, styryl-based dye, anthracene-based dye, cyclic carbonyl-based dye and triazole-based dye.

18. The near-infrared cut filter according to claim 16 , having a wavelength λ 0 (UV) with which transmittance of light at an incident angle of 0 degree becomes 50% and a wavelength λ 30 (UV) with which transmittance of light at an incident angle of 30 degrees becomes 50% in a region of a wavelength shorter than 450 nm, wherein an absolute value of a difference between the wavelengths |λ 0 (UV)−λ 30 (UV)| is 5 nm or less.

19. The near-infrared cut filter according to claim 16 , wherein an average of absolute value of the difference between transmittance of light at an incident angle of 0 degree and transmittance of light at an incident angle of 30 degrees is 8% or less in a wavelength of from 380 to 430 nm.