Semiconductor memory device with charge-diffusion-less transistors
View Patent ↗A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.
1. A semiconductor memory device comprising:
a substrate;
a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate; and
a pillar extending through the multi-layered structure, the pillar including
a semiconductor body extending along the pillar,
a tunnel insulating film provided between the multi-layered structure and the semiconductor body,
a block insulating film provided between the multi-layered structure and the tunnel insulating film, and
a charge-storing film between the tunnel insulating film and the block insulating film, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.
2. The semiconductor memory device according to claim 1 , wherein
the charge-storing film has a stacked structure of a first-composition film and a second-composition film, the second-composition film having a larger electric charge trap level than the first-composition film.
3. The semiconductor memory device according to claim 2 , wherein
the first-composition film includes silicon nitride that is more silicon-rich than the second-composition film, which includes silicon nitride or silicon oxynitride.
4. The semiconductor memory device according to claim 2 ,
wherein the second-composition film is between the conductive layer and the tunnel insulating film.
5. The semiconductor memory device according to claim 4 , wherein the first-composition film is in direct contact with the tunnel insulating film at the first portions of the charge-storing film.
6. The semiconductor memory device according to claim 4 , wherein the first-composition film continuously extends through the multi-layered structure and the second-composition film does not continuously extend through the multi-layered structure.
7. The semiconductor memory device according to claim 1 , wherein the block insulating film is in contact with the first-composition film but not in contact with the second-composition film.
8. The semiconductor memory device according to claim 1 , wherein a center portion of each of the insulating portions in a thickness direction thereof protrudes towards the semiconductor body.
9. The semiconductor memory device according to claim 1 , wherein the second portions of the charge-storing film having the second thickness each face one of the conductive layers and extend along an extension direction of the pillar, and a length of each second portion in the extension direction is greater than a thickness of the corresponding conductive layer in the extension direction.
10. The semiconductor memory device according to claim 9 , wherein the first portions of the charge-storing film having the first thickness each face one of the insulating layers and extend along the extension direction, and a length of each first portion in the extension direction is less than a thickness of the corresponding insulating layer in the extension direction.
11. The semiconductor memory device according to claim 10 , wherein the charge-storing film has third portions between the first and second portions in the extension direction, the third portions having a varying thickness between the first thickness and the second thickness.
12. The semiconductor memory device according to claim 1 , wherein an area of a cross-section of the pillar increases as the distance of the cross-section becomes farther from the substrate.
13. A semiconductor memory device comprising:
a substrate;
a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate; and
a pillar extending through the multi-layered structure, the pillar including
a semiconductor body extending along the pillar,
a tunnel insulating film provided between the multi-layered structure and the semiconductor body,
a block insulating film provided between the multi-layered structure and the tunnel insulating film, and
a charge-storing film between the tunnel insulating film and the block insulating film, the charge-storing film having a first thickness at a first portion, a second thickness that is greater than the first thickness at a second portion, and variable thickness between the first and second thicknesses at a third portion between the first portion and the second portion.
14. The semiconductor memory device according to claim 13 , wherein the first portion faces one of the insulating layers, and the second portion faces one of the conductive layers.
15. The semiconductor memory device according to claim 14 , wherein the first portion, the third portion, and the second portion form one continuous portion of the charge-storing film.
16. The semiconductor memory device according to claim 15 , wherein the insulating layer facing the first portion protrudes towards the semiconductor body.
17. The semiconductor memory device according to claim 13 , wherein
the charge-storing film has a stacked structure of a first-composition film and a second-composition film, the second-composition film having a larger electric charge trap level than the first-composition film.
18. The semiconductor memory device according to claim 17 , wherein
the first-composition film includes silicon nitride that is more silicon-rich than the second-composition film, which includes silicon nitride or silicon oxynitride.
19. The semiconductor memory device according to claim 13 , wherein an area of a cross-section of the pillar increases as the distance of the cross-section becomes farther from the substrate.