Managing solid state drive defect redundancies at sub-block granularity
Systems, apparatuses and methods may provide for initiating an erase of a block of non-volatile memory in response to an erase command, wherein the block includes a plurality of sub-blocks. Additionally, a failure of the erase with respect to a first subset of the plurality of sub-blocks may be tracked on an individual sub-block basis, wherein the erase is successful with respect to a second subset of the plurality of sub-blocks. In one example, use of the second subset of the plurality of sub-blocks is permitted, whereas use of the first subset of the plurality of sub-blocks is prevented.
1. A system comprising:
a compute subsystem;
a communications interface coupled to the compute subsystem; and
a memory device coupled to the communications interface, the memory device including:
a non-volatile memory to initiate an erase operation for a block of the non-volatile memory in response to an erase command, wherein the block is to include a plurality of sub-blocks; and
a non-volatile memory controller communicatively coupled to the non-volatile memory, the non-volatile memory controller to track a failure of the erase operation for the block on an individual sub-block basis, wherein the non-volatile memory controller is to:
transfer, in response to an indication that the erase operation for the block failed, an erase status enhanced command to the non-volatile memory to obtain an identification made from the erase operation for the block of each individual sub-block in a first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block; and
receive, from the non-volatile memory, a response to the erase status enhanced command including the identification made from the erase operation for the block of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
2. The system of claim 1 , wherein the non-volatile memory controller is to permit use of a second subset of the plurality of sub-blocks that successfully erased during the erase operation for the block.
3. The system of claim 1 , wherein the non-volatile memory controller is to prevent use of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
4. The system of claim 1 , wherein a first field of the response to the erase status enhanced command is one byte of data and a second field of the response to the erase status enhanced command is a variable number of bytes or a fixed number of bytes.
5. The system of claim 1 , wherein the non-volatile memory controller is to receive a communication to indicate the erase operation for the block did not fail, and wherein a number in a first field of the communication is zero and no useful data is in a second field of the communication.
6. The system of claim 1 , wherein the erase command is to identify the block of the non-volatile memory.
7. The system of claim 1 , wherein the non-volatile memory controller is to document in a table each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
8. A device comprising:
a non-volatile memory to initiate an erase operation for a block of the non-volatile memory in response to an erase command, wherein the block is to include a plurality of sub-blocks; and
a non-volatile memory controller communicatively coupled to the non-volatile memory, the non-volatile memory controller to track a failure of the erase operation for the block on an individual sub-block basis, wherein the non-volatile memory controller is to:
transfer, in response to an indication that the erase operation for the block failed, an erase status enhanced command to the non-volatile memory to obtain an identification made from the erase operation for the block of each individual sub-block in a first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block; and
receive, from the non-volatile memory, a response to the erase status enhanced command including the identification made from the erase operation for the block of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
9. The device of claim 8 , wherein the non-volatile memory controller is to permit use of a second subset of the plurality of sub-blocks that successfully erased during the erase operation for the block.
10. The device of claim 8 , wherein the non-volatile memory controller is to prevent use of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
11. The device of claim 8 , wherein the non-volatile memory controller is to receive a communication to indicate the erase operation for the block did not fail, and wherein a number in a first field of the communication is zero and no useful data is in a second field of the communication.
12. The device of claim 8 , wherein a first field of the response to the erase status enhanced command is one byte of data and a second field of the response to the erase status enhanced command is in a variable number of bytes or a fixed number of bytes.
13. The device of claim 8 , wherein the erase command is to identify the block of the non-volatile memory.
14. The device of claim 8 , wherein the non-volatile memory controller is to document in a table each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
15. A method comprising:
initiating an erase operation for a block of non-volatile memory in response to an erase command, wherein the block includes a plurality of sub-blocks; and
tracking a failure of the erase operation for the block on an individual sub-block basis, wherein tracking the failure includes:
transferring, in response to an indication that the erase operation for the block failed, an erase status enhanced command from a non-volatile memory controller to the non-volatile memory to obtain an identification made from the erase operation for the block of each individual sub-block in a first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block; and
receiving, at the non-volatile memory controller form the non-volatile memory, a response to the erase status enhanced command including the identification made from the erase operation for the block of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
16. The method of claim 15 , further including permitting use of a second subset of the plurality of sub-blocks that successfully erased during the erase operation for the block.
17. The method of claim 15 , further including preventing use of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
18. The method of claim 15 , wherein the non-volatile memory controller is to receive a communication to indicate the erase operation for the block did not fail, and wherein a number in a first field of the communication is zero and no useful data is in a second field of the communication.
19. The method of claim 15 , wherein a first field of the response to the erase status enhanced command is one byte of data and a second field of the response to the erase status enhanced command is a variable number of bytes or a fixed number of bytes.
20. The method of claim 15 , wherein the erase command identifies the block of the non-volatile memory.
21. The method of claim 15 , further including documenting in a table each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
22. The device of claim 8 , wherein the response to the erase status enhanced command includes a first field having a total number of sub-blocks that are in error in the first subset of the plurality of sub-blocks and a second field including the identification made from the erase operation for the block of each individual sub-block in the first subset of the plurality of sub-blocks that failed to erase during the erase operation for the block.
23. The device of claim 8 , wherein the non-volatile memory is to:
receive the erase command;
set all bits in the block to a predetermined value in response to the erase command;
read the bits in the block to determine whether the bits have the predetermined value; and
transfer, in response to a determination that the bits in the block do not have the predetermined value, the indication that the erase operation for the block failed.
24. The device of claim 23 , wherein the predetermined value is a same bit value that is to be set for all the bits in the block.